• Title/Summary/Keyword: organic ultra thin film

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Behaviors of Externally-Stimulated Organic Ultra Thin Films of Fatty Acid Halides (지방산 할로겐화물 유기초박막의 외부자극에 의한 거동)

  • Park, Keun-Ho;Lee, Jun-Ho;Kim, Duck-Sool
    • Journal of the Korean Applied Science and Technology
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    • v.26 no.1
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    • pp.102-108
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    • 2009
  • Behaviors of saturated fatty acid halides (CI4, C16, C18) were measured by LB method when the molecules were stimulated by pressure. The saturated fatty acid halides were deposited on the indium tin oxide(lTO) glass by the LB method. The average organic ultra thin film size and the surface roughness of the fatty acid halides thin films were investigated using AFM. It was found that AFM images show small surface roughness ($2.5{\sim}5.0\;nm$) and the organic ultra thin film size of $2.5{\sim}12\;nm$. Both aggregations and pin-holes were also seen on the AFM images. However we found that the surface roughness. These effects seem to be reasonable to be related to the increase of the organic ultra thin film size of fatty acid halides.

A study on the Dielectric Characteristics of Polyimide Organic Ultra Thin Films (폴리이미드 유기초박막의 유전특성에 관한 연구)

  • Chon, D.K.;Lee, K.S.
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1744-1746
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    • 1999
  • In this paper, we give pressure stimulation into organic ultra thin films and detected the induced displacement current properties, and then manufacture a device under the accumulation condition. In processing of a device manufacture, we can see the process is good from the change of a surface pressure and transfer ratio of area per molecule of organic ultra thin films. The structure of manufactured device is MIM(Au/polyimide LB films/AU), the number of accumulated 19 layers. I-V characteristic of the device is measured from -5[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The insulation of a thin film is better as the interval between electrodes is larger, and the insulation properties of a thin film is better as the distance between electrodes is larger.

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Fabricating and Observing Electric Conducting Phenomena Called "Anisotropy" of Organic Ultra Thin Films with (N-docosyl pyridinium)-TCNQ(1:2)Complex by the Langmuir-Blodgett Method (Langmuir-Blodgett(LB)법을 이용한 (N-docosyl pyridinium)-TCNQ(1:2)착체 유기 초박막의 제작과 이방성 전기전도 현상)

  • Kang, Hun;Jeong, Soon-Wook;Lee, Won-Jae;Shon, Byoung-Chung;Kang, Dou-Yol
    • Proceedings of the KIEE Conference
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    • 1988.11a
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    • pp.175-178
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    • 1988
  • A film is fabricated by depositing several sliced organic ultra thin films on a slide glass. Both UV-absorbance and the capacitance of a multi - layered organic ultra thin film with (N-docosyl pyridinium)-TCNQ(1:2) complex have a desired value on the condition of well alignment in depositing several layers. Forethermore the conductivity of this film measured by the direction of either horizontal or vertical axis. respectively, is results in a quite different value.

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Characteristics of Ultra-thin Polymer Ferroelectric Films (초박막 폴리머 강유전체 박막의 특성)

  • Kim, Kwang-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.4
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    • pp.84-87
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    • 2020
  • The properties of ultra-thin two-dimensional (2D) organic ferroelectric Langmuir-Blodgett (LB) films of the poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were investigated to find possible applicability in flexible and wearable electronics applications. In the C-V characteristics of the MFM capacitor of 2-monolayer of 5 nm films, a butterfly hysteresis curve due to the ferroelectricity of P(VDF-TrFE) was confirmed. Typical residual polarization value was measured at 2μC/㎠. When the MFM capacitor with ultra-thin ferroelectric film was measured by applying a 10 Hz bipolar pulse, it was shown that 65% of the initial polarization value in 105 cycles deteriorated the polarization. The leakage current density of the 2-monolayer film was maintained at about 5 × 10-8 A/㎠ for the case at a 5MV/cm electric field. The resistivity of the 2-monolayer film in the case at an electric field at 5 MV/cm was more than 2.35 × 1013 Ω·cm.

Ultra-High Resolution and Large Size Organic Light Emitting Diode Panels with Highly Reliable Gate Driver Circuits

  • Hong Jae Shin
    • International journal of advanced smart convergence
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    • v.12 no.4
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    • pp.1-7
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    • 2023
  • Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.

3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

  • Kim, Yong-Hae;Chung, Choong-Heui;Moon, Jae-Hyun;Lee, Su-Jae;Kim, Gi-Heon;Song, Yoon-Ho
    • ETRI Journal
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    • v.30 no.2
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    • pp.308-314
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    • 2008
  • In this paper, we describe the fabrication of 3.5-inch QCIF active matrix organic light emitting display (AMOLED) panels driven by thin film transistors, which are produced by an ultra-low-temperature polycrystalline silicon process on plastic substrates. The over all processing scheme and technical details are discussed from the viewpoint of mechanical stability and display performance. New ideas, such as a new triple-layered metal gate structure to lower leakage current and organic layers for electrical passivation and stress reduction are highlighted. The operation of a 3.5-inch QCIF AMOLED is also demonstrated.

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Silicon Thin-Film Transistors on Flexible Polymer Foil Substrates

  • Cheng, I-Chun;Chen, Jian Z.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1455-1458
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    • 2008
  • Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.

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Preparation and Oxygen Binding Properties of Ultra-Thin Polymer Films Containing Cobalt(II) meso-Tetraphenylporphyrin via Plasma Polymerization

  • Choe, Youngson
    • Macromolecular Research
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    • v.10 no.5
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    • pp.273-277
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    • 2002
  • Ultra-thin polymer films containing cobalt(II) meso-tetraphenylporphyrin(CoTPP) have been prepared by vacuum codeposition of the metal complex and trans-2-butene as an organic monomer using an inductively coupled RF glow discharge operating at 7-9 Watts. The polymer films were characterized by sorption measurements. Sorption data obtained for polymer films containing CoTPP indicate that the CoTPP molecules are capable of reversibly binding oxygen molecules. It was found that the adjacent CoTPP molecules in the aggregated metal complex phase could irreversibly share the oxygen molecules. A dispersion of the metal complex molecules in the polymer matrix was made to maintain the reversible reactivity of the metal complex molecules with oxygen in the polymer films via vacuum evaporation process. The Henry mode solubility constant, the Langmuir mode capacity constant, the amount of binding oxygen, and the dissociation equilibrium in the dual mode sorption theory were discussed.

${\pi}-A$ Characteristics of Stearic Acid LB Films (Stearic Acid Langmuir-Blodgett (LB) 막의 ${\pi}-A$ 특성)

  • Lee, Dae-Il;Choi, Yong-Sung;Chang, Sang-Mok;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.241-243
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    • 1991
  • The LB technique is one of the most, powerful fabricating methods of organic ultra thin film, which deposits a monolayer film in molecular level onto the surface of the substrate. In order to fabricate the LB film with optimal condition, we have to deposite monolayer film at optimum depositing pressure. which is dependent on the kind of deposit materials. ${\pi}-A$ curve is one of the most important, criteria to determine the optimum pressure. In this paper, we obtained that the optimum pressure is $20{\sim}50(mN/m)$ from ${\pi}-A$ curve of the stearic acid. In our experiments, it was known that LB ultra thin film is deposited beat at 30(mN/m) by checking the characteristics of LB film.

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A Study on the Dielectric Constant Measurement of PBDG Organic Ultra Thin Film (PBDG 유기초박막의 유전율 측정에 관한 연구)

  • Song, Jin-Won;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.150-152
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    • 2002
  • This paper, experiment manufactures device of Metal/Poly-$\gamma-Benzyl\;_D-Glutamate$ Organic Films/Metal structure using PBDG and I-V properties and C-F properties. The I-V characteristic is measured that approve voltage from 0 to +2[V] of device and the distance between electrode is larger, could know that small current flow and thin film could know that had insulation property. C-F characteristic has each other affinity between the polarization amount and frequency. Dielectric constant of MIM device could know by dipole that is voluntary polarization of LB film that polarization is happened. The capacitor properties of a thin film is better as the distance between electrodes is smaller.

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