Characteristics of Ultra-thin Polymer Ferroelectric Films

초박막 폴리머 강유전체 박막의 특성

  • Kim, Kwang-Ho (Division of Energy & Optical Technology Convergence, Cheongju University)
  • 김광호 (청주대학교 에너지광기술융합학부)
  • Received : 2020.12.04
  • Accepted : 2020.12.12
  • Published : 2020.12.31

Abstract

The properties of ultra-thin two-dimensional (2D) organic ferroelectric Langmuir-Blodgett (LB) films of the poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were investigated to find possible applicability in flexible and wearable electronics applications. In the C-V characteristics of the MFM capacitor of 2-monolayer of 5 nm films, a butterfly hysteresis curve due to the ferroelectricity of P(VDF-TrFE) was confirmed. Typical residual polarization value was measured at 2μC/㎠. When the MFM capacitor with ultra-thin ferroelectric film was measured by applying a 10 Hz bipolar pulse, it was shown that 65% of the initial polarization value in 105 cycles deteriorated the polarization. The leakage current density of the 2-monolayer film was maintained at about 5 × 10-8 A/㎠ for the case at a 5MV/cm electric field. The resistivity of the 2-monolayer film in the case at an electric field at 5 MV/cm was more than 2.35 × 1013 Ω·cm.

Keywords

References

  1. Hua Zhang, "Ultrathin Two-Dimensional Nano-materials," ACS Nano, Vol. 9, pp. 9451-9469, 2015. https://doi.org/10.1021/acsnano.5b05040
  2. O.A. Aktsipetrov, L.M. Blinov, V.M. Fridkin, T.V. Misuryaev, T.V. Murzina, S.P. Palto, S.G. Yudin, "Two-dimensional ferroelectricity and second harmonic generation in PVDF Langmuir-Blodgett films," Surface Science Vol. 454-456, pp. 1016-1020, 2000. https://doi.org/10.1016/S0039-6028(00)00216-8
  3. Pankaj Sharma, Timothy J. Reece, Daniel W. Wu, Vladimir M. Fridkin, Stephen Ducharme, and Alexei Gruverman, "Nanoscale Domain Patterns in Ultrathin Polymer Ferroelectric Films," J. Phys.: Condens. Matter Vol. 21, 485902, 2009. https://doi.org/10.1088/0953-8984/21/48/485902
  4. Vivek Bharti, Xing-Zhong Zhao, Q. M. Zhang, T. Romotowski, F. Tito and R. Ting, "Ultrahigh field induced strain and polarization response in electron irradiated poly(vinylidene fluoride trifluoroethylene) copolymer," Material Research Innovations, Vol. 2, pp. 57-63, 1998. https://doi.org/10.1007/s100190050063
  5. Kuniko Kimura and Hiroji Ohigashi, "Polarization Behavior in Vinylidene Fluoride-Trifluoroethylene Copolymer Thin Films," Japan. J. Appl. Phys. Vol. 25, pp. 383-387, 1986. https://doi.org/10.1143/JJAP.25.383
  6. Stephen Ducharme, V. M. Fridkin, A. V. Bune, S. P. Palto, L. M. Blinov, N. N. Petukhova, and S. G. Yudin, "Intrinsic Ferroelectric Coercive Field," Phys. Rev. Lett. Vol. 84, pp. 175-178, 2000. https://doi.org/10.1103/PhysRevLett.84.175
  7. C. S. Jung, In Tae Lee, P. W. Jang, K. Seomoon, K. H. Kim, "Electro-Optical Properties of Nano-Thickness Polymer Film," Journal of Nanoscience and Nanotechnology, Vol. 12, pp. 3326-3329, 2012. https://doi.org/10.1166/jnn.2012.5604
  8. Chisup Jung, "Fabrication and Optical Study of P(VDF-TrFE) Langmuir-Blodgett Films," THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. 53, pp. 2646-2649, 2008. https://doi.org/10.3938/jkps.53.2646
  9. Kwang-Ho Kim, "P(VDF-TrFE) Thin Film Transistors using Langmuir-Blodgett Method," Journal of the Semiconductor & Display Technology, Vol. 19, pp. 72-76, 2020.
  10. Donghyuk Shin, Hyelim Cho, Seran Park, Hoonjung Oh, and Dae-Hong Ko, "Improvement in Capacitor Characteristics of Titanium dioxide Film with Surface Plasma Treatment," Journal of the Semiconductor & Display Technology, Vol. 18, pp. 32-37, 2019.
  11. Yu Jung Kim, Jun Kyo Jeong, Jung Hyun Park, Byung Jun Jung, and Ga Won Lee, "Study on electrical characteristic improvement of PVP-IZO TFT prepared by solution process using UV-O3 treatment," Journal of the Semiconductor & Display Technology, Vol. 16, pp. 66-69, 2017.
  12. S.-. Jung, J.- . Choi, J. B. Koo, C. W. Park, B. S. Na, J.- Y. Oh, S. C. Lim, S. S. Lee, H. Y. Chu, and S.- . Yoon, "Flexible nonvolatile organic ferroelectric memo ry transistors fabricated on polydimethylsiloxane elastomer," Org. Electron., Vol. 16, pp. 46-53, 2015. https://doi.org/10.1016/j.orgel.2014.08.051
  13. A. Gerber, H. Kohlstedt, M. Fitsilis, R. Waser, T. J. Reec e, S. Ducharme, and E. Rije, "Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric poly vinylidene fluoride copolymer LangmuirBlodgett film," J Appl. Phys., Vol. 100, 024110, 2006. https://doi.org/10.1063/1.2218463
  14. S. Ducharme, T. J. Reece, C. M. Othon, and R. K. Rannow, "Ferroelectric polymer LangmuirBlodgett films for nonvolatile memory applications," IEEE Trans. Device Mater. Reliab., Vol. 5, No. 4, pp. 720-735, 2005. https://doi.org/10.1109/TDMR.2005.860818
  15. S.-W. Jung, B.-J. Ryu, and K.-W. Koo, "Electrical characteristics of organic ferroelectric memory devices fabricated on elastomeric substrate," The Transactions of the Korean Institute of Electrical Engineers, Vol. 67, pp. 799-803, 2018. https://doi.org/10.5370/KIEE.2018.67.6.799