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Ultra-High Resolution and Large Size Organic Light Emitting Diode Panels with Highly Reliable Gate Driver Circuits

  • Received : 2023.10.02
  • Accepted : 2023.10.12
  • Published : 2023.12.31

Abstract

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.

Keywords

References

  1. H. J. Shin and T. W. Kim, "Ultra-high-image-density large-size organic light-emitting devices based on In-Ga-ZnO thin-film transistors with a coplanar structure," Opt. Express, vol. 26, no. 13, pp. 16812-16819, July 2018. DOI: https://doi.org/10.1364/OE.26.016805
  2. Y. H. Jang, "Instability of Shift Register Circuits Using Hydrogenated Amorphous Si TFTs," Jpn. J. Appl. Phys., vol. 45, pp. 6806-6811, Sep. 2006. DOI: https://doi.org/10.1143/JJAP.45.6806
  3. J. M. Lee, I. T. Cho, J. H. Lee, and H. I. Kwon, "Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors," Appl. Phys. Lett., vol. 93, no. 9, pp. 093 504-1-093 504-3, Sep. 2008. DOI: https://doi.org/10.1063/1.2977865
  4. G. W. Chang, T. C. Chang, J. C. Jhu, T. M. Tsai, K. C. Chang, Y. E. Syu, Y. H. Tai, F. Y. Jian, and Y. C. Hung, "Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors," IEEE Trans. Electron Devices, vol. 61, no. 6, pp. 2119-2124, Jun. 2014. DOI: https://doi.org/10.1109/TED.2014.2319105
  5. L. R. Zhang, C. Y. Huang, G. M. Li, L. Zhou, W. J. Wu, M. Xu, L. Wang, H. L. Ning, R. H. Yao, and J. B. Peng, "A low-power high-stability flexible scan driver integrated by IZO TFTs," IEEE Trans. Electron Devices, vol. 63, no. 4, pp. 1779-1782, Apr. 2016. DOI: https://doi.org/10.1109/TED.2016.2529656
  6. J. W. Choi, J. I. Kim, S. H. Kim, and J. Jang, "Highly reliable amorphous silicon gate driver using stable center-offset thin-film transistors," IEEE Trans. Electron Devices, vol. 57, no. 9, pp. 2330-2334, Sep. 2010. DOI: https://doi.org/10.1109/TED.2010.2054453
  7. H. Lebrun, N. Szydlo, and E. Bidal, "Threshold-voltage Drift of Amorphous Silicon TFTs in Integrated Drivers for Active Matrix LCDs," J. SID, vol. 11, no. 3, pp. 539-542, Sep. 2003. DOI: https://doi.org/10.1889/1.1825683
  8. C. L. Lin, P. S. Chen, M. Y. Deng, C. E. Wu, W. C. Chiu, and Y. S. Lin, "UHD AMOLED Driving Scheme of Compensation Pixel and Gate Driver Circuits Achieving High-Speed Operation," J. Electron Dev. Soc., vol. 6, no. 1, pp. 26-33, Oct. 2018. DOI: https://doi.org/10.1109/JEDS.2017.2763601
  9. M. M, M. H. Choi, J. W. Choi, and J. Jang, "Transparent flexible circuits based on amorphous -indium-gallium-zinc-oxide thin-film transistors," IEEE Electron Device Lett., vol. 32, no. 2, pp. 170-172, Feb. 2011. DOI: https://doi.org/10.1109/LED.2010.2093504
  10. J. W. Cha and Y. C. Park, "A Study of 0.5-bit Resolution for True-Time Delay of Phased-Array Antenna System," International Journal of Advanced Smart Convergence, vol. 11, no. 4, pp. 96-103, December 2022. DOI: http://dx.doi.org/10.7236/IJASC.2022.11.4.96
  11. H. J. Shin and T. W. Kim, "Enhancement of the Luminance Uniformity in Large-Size Organic Light-Emitting Devices Based on In-Ga-Zn-O Thin-Film Transistors by Using a New Compensation Method," IEEE J. Electron Devices Society, vol. 7, no. 1, pp. 557-560, May 2019. DOI: https://doi.org/10.1109/JEDS.2019.2914497