• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.1-5
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• 2000

Co-fired resistors for high frequency MCM-C (Multi Chip Module-Cofired) were fabricated and measured their RF properties from DC to 6 GHz. LTCC (Low Temperature Co-fired Ceramics) substrates with 8 layers were used as the substrates. Resisters and electrodes were printed on the 7th layer and connected to the top layer by via holes. Deviation from DC resistance of the resistors was resulted from the resister pastes, resistor size, and via length. From the experimental results, the suitable equivalent circuit model was adopted with resistor, transmission line, capacitor, and inductor. The characteristic impedance $Z_{o}$ of the transmission line from the equivalent circuit can explain the RF behavior of the buried resistor according to the structural variation.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.280-281
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• 2011

Special Protection Scheme(SPS) that operates scenarios about faults beyond the normally protective action is wide system protection technology for the purpose of wide areas protection. Therefore, the SPS focuses on the improvement of the power supply capability by protecting the system rather than protecting the system equipments. Since the SPS requires emergency operation, the operation schedule is set up in advance by analyzing various scenarios. Since the SPS's action scheme uses generator tripping and is a classical method it is presently the most powerful one. However, as the setting of SPS is set to the most severe disturbance, the scheme tends to trip more generators than required to prevent fault propagation. It is highly likely that tripping generator units to prevent fault propagation would result in difficulty of system management and possibility of load shedding. Accordingly, it is desirable that generators are connected to the system within the range that ensures system stability and intelligent SPS is currently under development to solve the problem being stated. In this paper, as a part of developing the intelligent SPS, application of the fast-valving and braking resistor scheme to the generators is being proposed and analysed to reduce the number of tripped generators.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.379-382
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• 2011

Engine test as well as unload test of starting motor itself was performed to evaluate the braking characteristics of starting system used for initial spin-up of gas turbine for power generation. Through the experimental evaluation of the braking performance with the capacity of braking resistor of the starting motor, we have achieved quantitative data to secure robust braking characteristics in emergency during the starting period of the gas turbine. It is possible to establish a capacity selection criterion of braking resistor to ensure the starting reliability of the gas turbine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.777-784
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• 1999

Since the ultra-high voltage power apparatus are recommended to withstand switching surge generated from the electric power system, the switching impulse voltage is generally used to verify this requirement at the testing laboratories. Recently, the international standard(IEC 60060-2) related to the high voltage measurement techniques is revised requiring a traceability of measuring system for high voltage measurements. In this paper, a reference divider for switching impulse voltage is developed satisfying the revised. IEC standard and the possibility of applications has been investigated. Therefore, the characteristics of the high and low voltage side resistor and the shielding ring have been analyzed including the step response characteristics of the prototype divider. Throughout various efforts, it is confirmed that our measuring device has shown compatible characteristics as a reference divider.

• Journal of the Korean Society of Laryngology, Phoniatrics and Logopedics
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• v.9 no.1
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• pp.11-16
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• 1998

Background and Objectives : Electrolarynx has been used as one of the methods of rehabilitation for the laryngectomees. Previous electrolarynx could not alter frequency and intensity simultaneously. This institute developed an electrolarynx named "Evada" using FSR(force sensing resistor) sensor, which can control the frequency(and/or intensity) simultaneously. This study was performed for the normal control and laryngectomees with three types of electrolarynx (Evada, Servox-inton, Nu-vois) to reveal functional characteristics of Evada Materials and Methods : five laryngectomees and five normal adults were made to express there sentences(discriptive sentence, "You stay here" ; question sentence, "You stay here？" ; exclamation sentence, "You!! stay here!"), using three types of electrolarynx. Frequency change and intensity change from first and last vowel was calculated in three sentences and analyzed statistically by paired T-test. Results : The frequency change in the question sentence and exclamation sentence was more prominent in Evada than in Servox-inton and Nu-vois. The intensity change in the question sentence and exclamation sentence was also more prominent in Evada than in Servox-inton and Nu-vois. Conclusions : Evada could control frequency and intensity simultaneously and control degree of frequency(and/or intensity) according to the pressing force into the button. Evada could adjust continuously frequency and intensity during conversation. So, Evada is better in producing intonation and contrastive stress than Nu-vois and Servox-inton.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.5
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• pp.10-19
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• 1971

Problems and technologies involved in integrating an audio preamplifier in terms of thick film technology has been discussed in detail. In particular, an attempt has been made to find methods for functional trimming of the amplifer by employing computer analysis. Among seven resistors integrated on a alumina substrate, only one resistor was found to be very sensitive to over all performance of the preamplifier. By trimming this resistor to its freguency charcteristic reguirements, it was possible to cut down trimming labor by one seventh. Besides, problems concerning resistor conductor contacts, crossover parasitic capacitance and the relations between noise per(ormance and trimming method are discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.148-149
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• 2008

As infrared light is radiated, the CMOS Readout IC (ROIC) for the microbolometer type infrared sensor detects voltage or current when the resistance value in the bolometer sensor varies. One of the serious problems in designing the ROIC is that resistances in the bolometer and reference resistor have process variation. This means that each pixel does not have the same resistance, causing serious fixed pattern noise problems in sensor operations. In this paper, Reference resistor compensation technique was proposed. This technique is to compensate the reference resistance considering the process variation, and it has the same reference resistance value as a bolometer cell resistance by using a comparator and a cross coupled latch.

• Journal of the Korean Mathematical Society
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• v.47 no.6
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• pp.1223-1238
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• 2010

The purpose of this work is to identify the internal structure of the electrical networks with data obtained from only a part of network or the boundary of network. To be precise, it is discussed whether we can identify resistors or electrical conductivities of each link inside networks by the measurement of voltage on the boundary which is induced by a prescribed current on the boundary. As a result, it is shown that the structure of the resistor network can be determined uniquely by only one pair of the data (current, voltage) on the boundary, if the resistors satisfy an appropriate condition. Besides, several useful results about the energy functionals, which means the electrical power, are included.