• Title/Summary/Keyword: on channel

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Thiol-dependent Redox Mechanisms in the Modification of ATP-Sensitive Potassium Channels in Rabbit Ventricular Myocytes

  • Han, Jin;Kim, Na-Ri;Cuong, Dang-Van;Kim, Chung-Hui;Kim, Eui-Yong
    • The Korean Journal of Physiology and Pharmacology
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    • v.7 no.1
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    • pp.15-23
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    • 2003
  • Cellular redox state is known to be perturbed during ischemia and that $Ca^{2+}$ and $K^2$ channels have been shown to have functional thiol groups. In this study, the properties of thiol redox modulation of the ATP-sensitive $K^2$ ($K_{ATP}$) channel were examined in rabbit ventricular myocytes. Rabbit ventricular myocytes were isolated using a Langendorff column for coronary perfusion and collagenase. Single-channel currents were measured in excised membrane patch configuration of patch-clamp technique. The thiol oxidizing agent 5,5'-dithio-bis-(2-nitro-benzoic acid) (DTNB) inhibited the channel activity, and the inhibitory effect of DTNB was reversed by dithiothreitol (disulfide reducing agent; DTT). DTT itself did not have any effect on the channel activity. However, in the patches excised from the metabolically compromised cells, DTT increased the channel activity. DTT had no effect on the inhibitory action by ATP, showing that thiol oxidation was not involved in the blocking mechanism of ATP. There were no statistical difference in the single channel conductance for the oxidized and reduced states of the channel. Analysis of the open and closed time distributions showed that DTNB had no effect on open and closed time distributions shorter than 4 ms. On the other hand, DTNB decreased the life time of bursts and increased the interburst interval. N-ethylmaleimide (NEM), a substance that reacts with thiol groups of cystein residues in proteins, induced irreversible closure of the channel. The thiol oxidizing agents (DTNB, NEM) inhibited of the $K_{ATP}$ channel only, when added to the cytoplasmic side. The results suggested that metabolism-induced changes in the thiol redox can also modulate $K_{ATP}$ channel activity and that a modulatory site of thiol redox may be located on the cytoplasmic side of the $K_{ATP}$ channel in rabbit ventricular myocytes.

Doubly-Selective Channel Estimation for OFDM Systems Using a Pilot-Embedded Training Scheme

  • Wang, Li-Dong;Lim, Dong-Min
    • Journal of electromagnetic engineering and science
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    • v.6 no.4
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    • pp.203-208
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    • 2006
  • Channel estimation and data detection for OFDM systems over time- and frequency-selective channels are investigated. Relying on the complex exponential basis expansion channel model, a pilot-embedded channel estimation scheme with low computational complexity and spectral efficiency is proposed. A periodic pilot sequence is superimposed at a low power on information bearing sequence at the transmitter before modulation and transmission. The channel state information(CSI) can be estimated using the first-order statistics of the received data. In order to enhance the performance of channel estimation, we recover the transmitted data which can be exploited to estimate CSI iteratively. Simulation results show that the proposed method is suitable for doubly-selective channel estimation for the OFDM systems and the performance of the proposed method can be better than that of the Wiener filter method under some conditions. Through simulations, we also analyze the factors which can affect the system performances.

Analysis on Co-channel Interference of Human Body Communication Supporting IEEE 802.15.6 BAN Standard

  • Hwang, Jung-Hwan;Kang, Tae-Wook;Kim, Youn-Tae;Park, Seong-Ook
    • ETRI Journal
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    • v.37 no.3
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    • pp.439-449
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    • 2015
  • Human body communication (HBC) is being recognized as a new communication technology for mobile and wearable devices in a body area network (BAN). This paper presents co-channel interference experienced by HBC supporting the physical layer in the IEEE 802.15.6 BAN standard. To analyze the co-channel interference, a co-channel interference model is introduced, and space-domain and time-domain parameters representing an interference environment are generated using the co-channel interference model. A new signal-to-interference ratio (SIR) parameter depending on the peak amplitudes of the data signals causing co-channel interference is defined; co-channel interference can be easily analyzed and modelled using the newly defined SIR. The BER degradation model derived using the co-channel interference model and SIR in this paper can be effectively used to estimate the performance.

Side-Channel Attacks Detection Methods: A Survey

  • Assaeedi, Joanna;Alsuwat, Hatim
    • International Journal of Computer Science & Network Security
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    • v.22 no.6
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    • pp.288-296
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    • 2022
  • Side-channel attacks are a quiet mighty type of attack that targets specific physical implementations vulnerabilities. Even though several researchers have examined diverse means and methods of detecting side-channel attacks, at the present time a systematic review of these approaches does not exist. The purposes of this paper are to give an extensive analysis of literature on side-channel attack detection and offer intuitiveness from past research studies. In this study, a literature survey is conducted on articles related to side-channel attack detection between 2020 and 2022 from ACM and IEEE digital libraries. From the 10 publications included in the study, it appears they target either a single type of side-channel attacks or multiple types of side-channel attacks. Therefore, a vital review of each of the two categories is provided, as well as possible prospective research in this field of study.

A Study on the Channel Capacity of Fading Channel (페이딩 통신로의 통신 용량에 관한 연구)

  • 고봉진;황인수;조성준
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.8
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    • pp.1136-1145
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    • 1993
  • The channel capacities of various lading channels are calculated and compared with that of Gaussian noise channel to find out the decrements of channel capacity according to each fading environment. As a result, it is confirmed that the channel capacities in Rician and m-distribution fading channels approach to that of Gaussian noise channel as direct-to-indirect power ratio in Rician fading channel and fading index m in m-distribution fading channel increases respectively. And the difference between two channel capacities of Gaussian noise channel and each fading channel which is dependent on carrier-to-noise power ratio (CNR) is found. Also the improvement of channel capacity of Rayleigh fading channel by introducing two-branch diversities is obtained. For diversity reception, predetection maximal-ratio and postdetection selective combining techniques are adopted. The results show that the improvement of channel capacity by predetection maximal-ratio combining diversity is superior to the postdetection selective combining diversitiy regardless of correlation coefficient between two diversity branches in Raylelgh fading channel. The best improvement is achieved when two branches are noncorrelative in both two diversify techniques and as correlation coefficient of two diversity branches is smaller, the improvement of channel capacity is greater.

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Study on contact resistance on the performance of Oxide thin film transistors (산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향)

  • Lee, Jae-Sang;Chang, Seong-Pil;Koo, Sang-Mo;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.63-64
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    • 2009
  • The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and $25\;{\mu}m$) and channel lengths (70, 30, and $5\;{\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

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Assessing the Effects of Multi-Channel Service Quality on Customer Satisfaction and Loyalty in Retail Banking (은행서비스의 다채널 별 서비스 품질 평가가 고객 만족 및 충성도에 미치는 영향)

  • Kim, Jiyoung
    • Journal of the Korean Operations Research and Management Science Society
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    • v.41 no.1
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    • pp.71-85
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    • 2016
  • Service channel environments have changed dramatically with the advent of new, online digital channels. This article studies the effects of perceived multi-channel service quality on customer satisfaction and loyalty in the banking industry and the moderating role of age, which is a characteristic of customers. The objective is to identify the quality factors that affect the overall satisfaction and loyalty of a multi-channel customer. A quantitative study was conducted on 900 customers, with the main targets being users of the nine primary Korean retail banks. Results show that perceived service quality of the physical environment, human service, Internet banking, mobile banking, and ATM has a positive influence on overall satisfaction and loyalty. Age moderates the relationship among physical environment quality, human service, and customer loyalty.

Study on Contact Resistance on the Performance of Oxide Thin Film Transistors (산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향)

  • Lee, Jae-Sang;Koo, Sang-Mo;Lee, Sang-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.747-750
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    • 2009
  • The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

Simulation of channel dimension dependent conduction and charge distribution characteristics of silicon nanowire transistors using a quantum model (양자모델을 적용한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.77-78
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    • 2009
  • We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

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Simulation of Channel Dimension Dependent Conduction and Charge Distribution Characteristics of Silicon Nanowire Transistors using a Quantum Model (양자효과를 고려한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.728-731
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    • 2009
  • We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.