Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Contact Resistance on the Performance of Oxide Thin Film Transistors

산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향

  • 이재상 (한국과학기술연구원 에너지재료연구단) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 이상렬 (한국과학기술연구원 에너지재료연구단)
  • Published : 2009.09.01
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Abstract

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

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References

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