Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Modeling of Indium Tin Oxide(ITO) Film Deposition Process using Neural Network

신경회로망을 이용한 ITO 박막 성장 공정의 모형화

  • Published : 2009.09.01
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Abstract

Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

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References

  1. H. Kuhn, 'Present status and future prospect of LB film research', 89 Fourth International Conference on LB films, p. 2, 1989
  2. J. B. Chu, H. B. Zhu, X. B. Xu, Z. Sun, Y. W. Chen, and S. M. Huang, 'RF magnetron sputtered indium tin oxide thin films for application in solar cells', Nanoelectronics Conference, p. 728, 2008
  3. F. Colombel, X. Castel, M. Himdi, G. Legeay, and E. M. Cruz, 'Ultrathin metal layer, ITO film and ITO/Cu/ITO multilayer towards transparent antenna', Science, Measurement & Technology, IET, Vol. 3, Iss. 3, p. 229, 2009 https://doi.org/10.1049/iet-smt:20080060
  4. K. Suzuki, N. Hashimoto, T. Oyama, J. Shimizu, Y. Akao, and H. Kojima, 'Large scale and low resistance ITO films formed at high deposition rates', Thin Solid Films., Vol. 226, No. 1, p. 104, 1993 https://doi.org/10.1016/0040-6090(93)90213-9
  5. H. L. Ma, D. H. Zhang, P. Ma, S. Z. Win, and S. Y. Li, 'Preparation and properties of transparent conducting indium tin oxide films deposited by reactive evaporation', Thin Solid Films., Vol. 263, No. 1, p. 105, 1995 https://doi.org/10.1016/0040-6090(95)06554-7
  6. P. K. Song, Y. Shigesato, M. KameiI, and I. YasuI, 'Electrical and structural properties of Tin-doped indium oxide films deposited by DC sputtering at room temperature', Jpn. J. Appl. Phys., Vol. 38, No. 5A, p. 2921, 1999 https://doi.org/10.1143/JJAP.38.2921
  7. A. H. M. Zahirul Alam, P. K. Saha, T. Hata, and K. Sasaki, 'High-rate reactive deposition of indium oxide films on unheated substrate using ozone gas', Thin Solid Films, Vol. 352, No. 1-2, p. 133, 1999 https://doi.org/10.1016/S0040-6090(99)00347-8
  8. 이임영, 최상대, 이기암, '상온 이온 보조 증착된 ITO 박막의 특성', 한국광학학회지, 13권, 3호, p. 204, 2002 https://doi.org/10.3807/KJOP.2002.13.3.204