Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Low Leakage Current Circular AlGaN/GaN Schottky Barrier Diode

누설전류를 줄이기 위한 원형 AlGaN/GaN 쇼트키 장벽 다이오드

  • 김민기 (서울대학교 전기.컴퓨터공학부) ;
  • 임지용 (서울대학교 전기.컴퓨터공학부) ;
  • 최영환 (서울대학교 전기.컴퓨터공학부) ;
  • 김영실 (서울대학교 전기.컴퓨터공학부) ;
  • 석오균 (서울대학교 전기.컴퓨터공학부) ;
  • 한민구 (서울대학교 전기.컴퓨터공학부)
  • Published : 2009.09.01
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Abstract

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AIGaN/GaN SBD showed high forward current of 88.61 mA at 3,5 V while that of the conventional device was 14.1 mA at the same condition.

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References

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