• Journal of Korea Society of Industrial Information Systems
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• v.17 no.3
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• pp.27-34
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• 2012

This paper presents the impact of time dependent dielectric breakdown (TDDB, also called as gate oxide breakdown) failure on nanoscale digital CMOS Circuits. Recently, TDDB for ultra-thin gate oxides has been considered as one of the critical reliability issues which can lead to performance degradation or logic failures in nanoscale CMOS devices. Also, leakage power in the standby mode can be increased significantly. In this paper, TDDB aging effects on large CMOS digital circuits in the 45nm technology are analyzed. Simulation results show that TDDB effect on MOSFET circuits can result in more significant increase of power consumption compared to delay increase.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.1
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• pp.19-24
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• 2013

As CMOS technology is scaled down more aggressively, the reliability mechanism (or aging effect) caused by the diffusion of metal atoms along the conductor in the direction of the electron flow, also called electromigration (EM), has become a major reliability concern. With the present of EM, it is difficult to control the current flows of the MOSFET device and interconnect. In addition, nanoscale CMOS circuits suffer from increased gate leakage current and power consumption. In this paper, the EM effects on current of the nanoscale CMOS circuits are analyzed. Finally, this paper introduces an on-chip current measurement method providing lifetime electromigration management which are designed using 45-nm CMOS predictive technology model.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.4
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• pp.17-23
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• 2012

Ultra low-power design and energy harvesting applications require digital systems to operate under extremely low voltages approaching the point of balance between dynamic and static power consumption which is attained in the sub-threshold operation mode. Delay variations are extremely large in this mode. Therefore, in this paper, a new low-power logic design methodology using asynchronous NCL circuits is proposed to reduce power consumption and not to be affected by various technology variations in nanoscale MOSFET technology. The proposed NCL is evaluated using various benchmark circuits at 0.4V supply voltage, which are designed using 45nm MOSFET predictive technology model. The simulation results are compared to those of conventional synchrouns logic circuits in terms of power consumption and speed.

• ETRI Journal
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• v.32 no.4
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• pp.530-539
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• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• Journal of Communications and Networks
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• v.12 no.2
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• pp.158-167
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• 2010

The energy efficiency of wireless infrastructure and terminals has been drawing renewed attention of late, due to their significant environmental cost. Emerging green communication paradigms such as cognitive radios, are also imposing the additional requirement of flexibility. This dual requirement of energy efficiency and flexibility poses new design challenges for implementing radio functional blocks. This paper focuses on the area vs. power trade-offs for the type of channel filters that are required in the digital frontend of a flexible, energy-efficient radio. In traditional CMOS circuits, increased area was traded for reduced dynamic power consumption. With leakage power emerging as the dominant mode of power consumption in nanoscale CMOS, these trade-offs must be revisited due to the strong correlation between area and leakage power. The current work discusses how the increased timing slacks obtained by increasing the parallelism can be exploited for overall power reduction even in nanoscale circuits. In this context the paper introduces the notion of 'area efficiency' and a metric for evaluating it. The proposed metric has also been used to compare the area efficiencies of different classes of time-shared filters.

• ETRI Journal
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• v.44 no.3
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• pp.491-503
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• 2022

Metal-oxide-semiconductor field-effect transistors (MOSFETs) are continuously scaling down in the nanoscale region to improve the functionality of integrated circuits. The scaling down of MOSFET devices causes short-channel effects in the nanoscale region. In nanoscale region, leakage current components are increasing, resulting in substantial power dissipation. Very large-scale integration designers are constantly exploring different effective methods of mitigating the power dissipation. In this study, a transistor-level input-controlled stacking (ICS) approach is proposed for minimizing significant power dissipation. A low-power ICS approach is extensively discussed to verify its importance in low-power applications. Circuit reliability is monitored for process and voltage and temperature variations. The ICS approach is designed and simulated using Cadence's tools and compared with existing low-power and high-speed techniques at a 22-nm technology node. The ICS approach decreases power dissipation by 84.95% at a cost of 5.89 times increase in propagation delay, and improves energy dissipation reliability by 82.54% compared with conventional circuit for a ring oscillator comprising 5-inverters.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.361.2-361.2
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• 2016

The manufacture of organic electronic circuits requires effective heterogeneous integration of different nanoscale organic materials with uniform morphology and crystallinity in a desired arrangement on a substrate. Herein, we present a new direct printing method, which enables monolithic integration of crystalline nanowire arrays with a diverse range of organic materials. In this method, we use a nanoscale patterned soft mold, which contains an assembly of simple nanoline patterns but, in combination with droplet of various organic inks, can produce a large-scale integration of various nanopatterns with multiple kinds of organic materials. The morphology of organic nanowires can controlled by nanoconfinement in nanoline of mold. And mutual alignment of nanopatterns can be controlled by adjusting the ink droplet size, number of droplets, ink deposition locations.

• ETRI Journal
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• v.36 no.1
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• pp.89-98
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• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.

• ETRI Journal
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• v.36 no.6
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• pp.931-941
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• 2014

Many methodologies for clock mesh networks have been introduced for two-dimensional integrated circuit clock distribution networks, such as methods to reduce the total wirelength for power consumption and to reduce the clock skew variation through consideration of buffer placement and sizing. In this paper, we present a methodology for clock mesh to reduce both the clock skew and the total wirelength in three-dimensional integrated circuits. To reduce the total wirelength, we construct a smaller mesh size on a die where the clock source is not directly connected. We also insert through-silicon vias (TSVs) to distribute the clock signal using an effective clock TSV insertion algorithm, which can reduce the total wirelength on each die. The results of our proposed methods show that the total wirelength was reduced by 12.2%, the clock skew by 16.11%, and the clock skew variation by 11.74%, on average. These advantages are possible through increasing the buffer area by 2.49% on the benchmark circuits.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.