• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Journal of Oriental Neuropsychiatry
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• v.10 no.1
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• pp.39-51
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• 1999

The effects of Hyangbujapalmultang on the enhancement of learning and memory of AD model rats were studied with Morris water maze. Sample group was electrolytically lesioned on nucleus basalis of Meynert(nbM), and then daily treated with the medicine for two months. Control group with nbM lesion, and sham group with the sham operation were treated the vehicle for the same duration. The following results were observed. 1. As the learning trials of Morris water maze were proceeded, sham group showed the escape latency from $54.7{\pm}2.28$ seconds in 1st trial to $13.3{\pm}3.27$ seconds in 7th. The control group showed the escape latency from $58.0{\pm}1.78$ seconds in 1st trial to $51.3{\pm}3.52$ seconds in 7th. The sample group showed the escape latency from $57.0{\pm}2.21$ seconds in 1st trial to $28.4{\pm}4.82$ seconds in 7th. Therefore, these data shows that all three groups were improved in learning capacity as trials were proceeded, but the sample group showed more prominent improvement in learning compared with the control group(p<0.05). 2. In memory retention test of Morris water maze that counts the staying time in the target area during 30 seconds of freely swimming period, sham group stayed for $4.81{\pm}1.15$ seconds, the control group stayed for $1.27\pm}0.78$ seconds, and the sample group stayed for $4.17{\pm}1.47$ seconds. The analysis of the memory retention data shows that the sample group marked more improvement in memory retention compared with the control group, but could not obtained statistically significant result(p<0.05). With the experimental results above, Hyangbujapalmultang can be supposed to have the improving effects on the learning of AD model rats induced by electrolytic lesion of nbM.

• The Journal of the Korea Contents Association
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• v.9 no.2
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• pp.309-317
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• 2009

This study was to investigate the effects of restoring cognition function and neurotrophic factor in the hippocampus according to memory and learning training in rats affected by brain injury. Brain injury was induced in Sprague-Dawley rats(36 rats) through middle cerebral artery occlusion(MCAo). And then experiment groups were randomly divided into three groups; Group I: Brain injury induction(n=12), Group II: the application for treadmill training after brain injury induction(n=12), Group III: the application for memory and learning training after brain injury induction(n=12). Morris water maze acquisition test and retention test were performed to test cognitive function. And the histological examination was also observed through the immunohistochemistric response of BDNF(brain-derived neurotrophic factor) in the hippocampus. For Morris water maze acquisition test, there were significant interactions among the groups with the time(p<.001). The time to find the circular platform in Group III was more shortened than in Group I, II on the 9th, 10th, 11th and 12th day. For Morris water maze retention test, there were significant differences among the groups(p<.001). The time to dwell on quadrant circular platform in Group III on the 13th day was the longest compared with other groups. And as the result of observing the immunohistochemistric response of BDNF in the hippocampus CA1, the response of immunoreactive positive in Group III on the 7th day increased more than that of Group I, II. These results suggested that the memory and learning training in rats with brain injury has a more significant impact on restoring cognitive function via the changes of neurotropic factor expression and synaptic neuroplasticity.

• Journal of Oriental Neuropsychiatry
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• v.9 no.1
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• pp.1-24
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• 1998

The effects of Hyungbangjiwhangrang on the enhancement of learning and memory of AD model rats were studied with Morris water maze and radial arm maze. Sample group was electrolytically lesioned on nbM, and then daily treated with the medicine for two months. Control group with nbM lesion, and sham group with the sham operation were treated the vehicle for same duration. The following results were observed.1. As the learning trials of Morris water maze processed repeatedly, sham group achiened 201.64${\pm}$33.13 seconds in 1st trial, 153.14${\pm}$61.80 seconds in 2nd, 106.21${\pm}$46.81 seconds in 3rd, 76.64${\pm}$48.40 seconds in 4th, and 52.29${\pm}$38.25 seconds in 5th. The control group achieved 224.08${\pm}$29.16 in 1st trial, 191.77${\pm}$67.97 seconds in 2nd, 177.77${\pm}$65.44 seconds in 3rd, 140.92${\pm}$68.27 seconds in 4th, and 126.46${\pm}$79.15 seconds in 5th. The sample group achieved 223.36${\pm}$23.33 seconds in 1st trial, 215.86${\pm}$38.93 seconds in 2nd, 190.79${\pm}$51.57 seconds in 3rd, 155.79${\pm}$62.67 seconds in 4th, and 127.93${\pm}$62.11 seconds in 5th. Therefore, these data shows that all three groups were improved in learning capacity as trials were repeated, but the shame group showed prominent improvement in learning compared with the control group(p<0.05).2. In memory retention test of Morris water maze that counts the staying time in the target area, sham group stayed for 15.36${\pm}$5.39 seconds, the control group stayed for 5.54${\pm}$5.64 seconds, and the sample group stayed for 7.43${\pm}$6.09 seconds. The analysis of the memory retention data shows that the sham group marked more significant improvement stati- stically in memory retention compared with the control group(p<0.05).3. In the learning of radial arm maze, the number and rate of animals that arrive the learning criteria amounted 12 out of 14, 85.7% in sham group, 4 out of 13, 30.8% in the control group, and 10 out of 14, 71.4% in the sample group So, the sample group shows better learning capacity significantly compared with the control group(p<0.05). With the experimental results above, Hyungbangjiwhangtang can be supposed to have the improving effects on the learning and memory of AD rats induced by eletronical injury of nbM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.94-95
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• 2007

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.408-409
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• 2009

The memory characteristics of charge trap memory capacitor with high-k materials were investigated. I-V characteristics of the fabricated device with band gap engineered tunneling gate stacks consisted of $SiO_2$, $ZrO_2$, $Al_2O_3$ dielectrics were evaluated and compared with the one consisted of $SiO_2$ tunneling dielectric. The memory capacitor including engineered tunneling dielectrics of ($Al_2O_3/ZrO_2/SiO_2$) shows the fastest PIE speed and long data retention time.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.27-31
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• 2008

We have studied nonvolatile memory properties of MOSFETs with double-stacked Si nanoclusters in the oxide-gate stacks. We formed Si nanoclusters of a uniform size distribution on a 5 nm-thick tunneling oxide layer, followed by a 10 nm-thick intermediate oxide and a second layer of Si nanoclusters by using LPCVD system. We then investigated the memory characteristics of the MOSFET and observed that the charge retention time of a double-stacked Si nanocluster MOSFET was longer than that of a single-layer device. We also found that the double-stacked Si nanocluster MOSFET is suitable for use as a dual-bit memory.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.