• Title/Summary/Keyword: low-power dissipation

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A Research Trend on Film Thickness Dependence of Ac High Feld for Low Density Polyethylene (저밀도 폴리에틸렌을 위한 고전계 파형의 필름 두께의존성에 관한 연구 동향)

  • Jung, Sung-Chan;Rho, Jung-Hyun;Lee, Joo-Hong;Hwang, Jong-Sun;Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1988-1989
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    • 2007
  • Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. We have already reported that the dissipation currents of $40\;{\mu}m$ thick LDPE film at 10 kV/mm and over 140 Hz, it starts to show nonlinearity and odd number's harmonics were getting large. To investigate the conduction mechanis ms in this region, especially space charge effect, various kinds of estimation, such as time variations of instantaneous resistivity for one cycle, FFT spectra of dissipation current waveforms and so on, has been examined. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

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An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib;Ryu, Jee-Youl
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.595-604
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    • 2016
  • Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

VLSI Implementation of Low-Power Motion Estimation Using Reduced Memory Accesses and Computations (메모리 호출과 연산횟수 감소기법을 이용한 저전력 움직임추정 VLSI 구현)

  • Moon, Ji-Kyung;Kim, Nam-Sub;Kim, Jin-Sang;Cho, Won-Kyung
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.5A
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    • pp.503-509
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    • 2007
  • Low-power motion estimation is required for video coding in portable information devices. In this paper, we propose a low-power motion estimation algorithm and 1-D systolic may VLSI architecture using full search block matching algorithm (FSBMA). Main power dissipation sources of FSBMA are complex computations and frequent memory accesses for data in the search area. In the proposed algorithm, memory accesses and computations are reduced by using 1D PE (processing array) array architecture performing motion estimation of two neighboring blocks in parallel and by skipping unnecessary computations during motion estimation. The VLSI implementation results of the algorithm show that the proposed VLSI architecture can save 9.3% power dissipation and can operate two times faster than an existing low-power motion estimator.

An 8-bit 40 Ms/s Folding A/D Converter for Set-top box (Set-top box용 an 8-bit 40MS/s Folding A/D Converter의 설계)

  • Jang, Jin-Hyuk;Lee, Ju-Sang;Yu, Sang-Dae
    • Proceedings of the KIEE Conference
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    • 2004.11c
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    • pp.626-628
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    • 2004
  • This paper describes an 8-bit CMOS folding A/D converter for set-top box. Modular low-power, high-speed CMOS A/D converter for embedded systems aims at design techniques for low-power, high-speed A/D converter processed by the standard CMOS technology. The time-interleaved A/D converter or flash A/D converter are not suitable for the low-power applications. The two-step or multi-step flash A/D converters need a high-speed SHA, which represents a tough task in high-speed analog circuit design. On the other hand, the folding A/D converter is suitable for the low-power, high-speed applications(Embedded system). The simulation results illustrate a conversion rate of 40MSamples/s and a Power dissipation of 80mW(only analog block) at 2.5V supply voltage.

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Design of a Analog Multiplier for low-voltage low-power (저전압 저전력 아날로그 멀티플라이어 설계)

  • Lee, Goun-Ho;Seul, Nam-O
    • Proceedings of the KIEE Conference
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    • 2005.07d
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    • pp.3058-3060
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    • 2005
  • In this paper, the CMOS four-quadrant analog multipliers for low-voltage low-power applications are presented. The circuit approach is based on the characteristic of the LV (Low-Voltage) composite transistor which is one of the useful analog building blocks. SPICE simulations are carried out to examine the performances of the designed multipliers. Simulation results are obtained by $0.25{\mu}m$ CMOS parameters with 2V power supply. The LV composite transistor can easily be extended to perform a four-quadrant multiplication. The multiplier has a linear input range up to ${\pm}0.5V$ with a linearity error of less than 1%. The measured -3dB bandwidth is 290MHz and the power dissipation is $37{\mu}W$. The proposed multiplier is expected to be suitable for analog signal processing applications such as portable communication equipment, radio receivers, and hand-held movie cameras.

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A Low-Power Low-Complexity Transmitter for FM-UWB Systems

  • Zhou, Bo;Wang, Jingchao
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.194-201
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    • 2015
  • A frequency modulated ultra-wideband (FM-UWB) transmitter with a high-robust relaxation oscillator for subcarrier generation and a dual-path Ring VCO for RF FM is proposed, featuring low power and low complexity. A prototype 3.65-4.25 GHz FM-UWB transceiver employing the presented transmitter is fabricated in $0.18{\mu}m$ CMOS for short-range wireless data transmission. Experimental results show a bit error rate (BER) of $10^{-6}$ at a data rate of 12.5 kb/s with a communication distance of 60 cm is achieved and the power dissipation of 4.3 mW for the proposed transmitter is observed from a 1.8 V supply.

Small-Swing Low-Power SRAM Based on Source-Controlled 4T Memory Cell (소스제어 4T 메모리 셀 기반 소신호 구동 저전력 SRAM)

  • Chung, Yeon-Bae;Kim, Jung-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.3
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    • pp.7-17
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    • 2010
  • In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.

The Low Voltage Analog Multiplier Using The Bulk-driven MOSFET Techniques (Bulk-Driven 기법을 이용한 저전압 Analog Multiplier)

  • 문태환;권오준;곽계달
    • Proceedings of the IEEK Conference
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    • 2001.06b
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    • pp.301-304
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    • 2001
  • The analog multiplier is very useful building block in many circuits such as filter, frequency-shifter, and modulators. In recent year, The main design issue of circuit designer is low-voltage/low-power system design, because of all systems are recommended very integrated system and portable system In this paper, the proposed the four-quadrant analog multiplier is using the bulk-driven techniques. The bulk-driven technique is very useful technique in low-voltage system, compare with gate-driven technique. therefore the proposed analog multiplier is operated in 1V supply voltage. And the proposed analog multiplier is low power dissipation compare with the others. therefor the proposed analog multiplier is convenient in low-voltage/low-power in system.

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Design of Low Noise Amplifier Utilizing Input and Inter Stage Matching Circuits (다양한 매칭 회로들을 활용한 저잡음 증폭기 설계 연구)

  • Jo, Sung-Hun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.25 no.6
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    • pp.853-856
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    • 2021
  • In this paper, a low noise amplifier having high gain and low noise by using input and inter stage matching circuits has been designed. A current-reused two-stage common-source topology is adopted, which can obtain high gain and low power consumption. Deterioration of noise characteristics according to the source inductive degeneration matching is compensated by adopting additional matching circuits. Moreover trade-offs among noise, gain, linearity, impedance matching, and power dissipation have been considered. In this design, 0.18-mm CMOS process is employed for the simulation. The simulated results show that the designed low noise amplifier can provide high power gain and low noise characteristics.

A Design of DLL(Delay-Locked-Loop) using new Locking Algorithm (새로운 Locking 알고리즘을 이용한 DLL(Delay-Locked-Loop) 설계)

  • 경영자;김태엽;이광희;손상희
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.95-99
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    • 2000
  • New locking algorithm of DLL is proposed to improve the locking speed and low power dissipation in this paper, In spite of using the architecture of delay controller, low power consumption is acquired by operating only one controller at once and fast locking speed is accomplished by initial setting from the coarse controller. The proposed DLL circuit is operated from 50MHz to 200MHz and locked within 6 cycle at all of operating frequency.

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