• 한국광학회지
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• 제20권1호
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• pp.34-40
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• 2009

$MgF_2$, $SiO_2$ 및 ZnS 박막을 물리 증기 증착하는 동안 펄스 레이저(Nd-YAG, 제2고조파 532 nm)로 Annealing 하여 표면 거칠기 특성을 개선하였다. 펄스 반복율이 10 Hz, 펄스폭 5 ns, 파장 532 nm인 펄스레이저로 Annealing한 유리 기판에 증착된 $MgF_2$와 $SiO_2$ 시료들은 레이저 에너지가 $140\;mJ/cm^2$ 경우에 산란 총량 값이 최소가 되었지만, ZnS 박막의 경우에는 Annealing 레이저광 에너지가 $62\;mJ/cm^2$일 때 산란 총량이 최소값을 나타냈다. AFM을 사용하여 박막시료의 표면 거칠기에 대한 펄스 레이저 Annealing 효과를 측정 하였다. 그 결과는 TIS 측정치와 유사 하여 표면 거칠기는 Annealing 하기위해 조사된 레이저 에너지에 의존 하여 감소하였다.

• 한국진공학회지
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• 제16권2호
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• pp.141-144
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• 2007

n-GaAs의 시료를 furnace annealing 처리와 laser annealing 처리를 한 후, PR 방법으로 비교 조사하였다. 시료는 Furnace annealing을 5 분간 $400{\sim}800^{\circ}C$에서 처리한 시료와 ArF excimer laser($30{\sim}50\;W$)로 5 분간 Laser annealing 처리 한 시료로 준비하였다. Furnace로 annealing을 한 경우에 주 신호(정점)는 1.43 eV에서 관측되었는데 비해 laser로 annealing 한 샘플은 1.42 eV로 0.01 eV가 더 작게 관측되었다. 이는 laser annealing이 furnace annealing 보다 표면과 내면에서 일어나는 열처리 효과가 더 고르게 일어나가 때문이다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.36.2-36.2
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• 2009

In this work, the high power CW Nd:YAG laser has been used for thermal treatment of inkjet printed Ag films-involving eliminating organic additives (dispersant, binder, and organic solvent) of Ag ink and annealing Ag nanoparticles. By optimizing laser parameters, such as laser power and defocusing value, the laser energy can totally be converted to heat energy, which is used to thermal treatment of inkjet printed Ag films. This results in controlling the microstructures and the resistivity of films. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristic of inkjet printed Ag films is compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling image shows that the laser annealed Ag films have large columnar grains and dense structure (void free), while furnace annealed films have tiny grains and exhibit void formation. Due to these microstructural characteristics of laser annealed films, it has better electrical property (low resistivity) compared to furnace annealed samples.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.910-913
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• 2003

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

• 대한금속재료학회지
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• 제47권5호
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• pp.316-321
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• 2009

Co nanoparticles on silica substrates were fabricated by inducing a thin-film dewetting through two different processes-furnace annealing and pulsed-laser annealing. The effects of annealing temperature, film thickness and laser energy density on dewetting morphology and mechanism were investigated. Co thinfilms with thicknesses between 3 to 15 nm were deposited using ion-beam sputtering, and then, in order to induce dewetting, thermally annealed in furnace at temperatures between 600 and $900^{\circ}C$. Some as-deposited films were irradiated using a Nd-YAG pulsed-laser of 266 nm wavelength to induce dewetting in liquid-state. Films annealed in furnace agglomerated to form nanoparticles above $700^{\circ}C$, and those average particle size and spacing were increased with an increase of film thickness. On the laser annealing process, above the energy density of $100mJ/cm^2$, metal films were completely dewetted and the agglomerated particles exhibited greater size uniformity than those on the furnace annealing process. A detailed dewetting mechanism underlaying both processes were discussed.

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• Journal of Information Display
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• 제11권1호
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.336-336
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• 2011

AMOLED에 대한 관심이 높아짐에 따라 LTPS (Low Temperature Poly Silicon) TFT에 대한 연구가 활발히 이루어지고 있다. 다결정 실리콘은 단결정 실리콘에 비해 100 cm2/V 이상의 이동도를 보이는 우수한 특성으로 인해 AMOLED 디스플레이에 적합하며 여러 기업에서 LTPS 공정을 이용한 TFT제작을 연구 중이다. LTPS 공정은 현재 ELA (Excimer Laser Annealing) 방식으로 대면적 유리기판에 ELA 방법을 적용함에 있어 설비투자 비용이 지나치게 높아진다는 단점을 가지고 있다. 설비투자 비용의 문제점을 해결하기 위해 Diode Laser을 이용하여 Annealing하는 방법에 대해 연구하였다. 본 연구는 Diode Laser Annealing 방식을 이용하여 poly-Si을 구현하였다. 단결정 실리콘을 제작하기 위해 ICP-CVD장비를 이용하여 150$^{\circ}C$에서 SiH4, He2 혼합, He/SiH4의 flow rate는 20/2[sccm], RF power는 400 W에서 700 W으로 가변, 증착 압력은 25mTorr으로 하였다. 940 nm 파장의 30 W Diode Laser를 8 mm Spot Size로 a-Si에 순간 조사하여 결정화, 그 결과 grain을 형성한 polycrystalline 구조를 확인하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권3호
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• pp.103-108
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• 2005

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.203-203
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• 2009

Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.