Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Laser irradiation characteristics for Oxide TFTs on Flexible Substrate

산화물 반도체 Flexible Display 소자 제작을 위한 Laser 가공 특성 연구

  • 손혁 (삼성전자 DS부문) ;
  • 이공수 (삼성전자 DS부문) ;
  • 정한욱 (성균관대학교 정보통신공학부) ;
  • 김광열 (성균관대학교 정보통신공학부) ;
  • 최영덕 (성균관대학교 정보통신공학부)
  • Published : 2009.11.12
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Abstract

Low temperature annealing for oxide TFTs including IGZO on PI substrate is the essential process to fabricate flexible display devices, since low heat-resistance on PI and PEN substrates limits the temperature range. Laser annealing is one of the promising candidates for low temperature process, and it has been used for various application in semiconductor and LCD fabrication. We irradiated laser to solution-based IGZO thin films on PI substrate were irradiated to laser beam, and investigated laser damage of PI layer. Based on transmittance analysis, wavelength(532nm) and scan speed(1000mm/s) is the optimized condition for laser irradiation about ink-Jet printed oxide TFTs on PI substrates.

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