한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.910-913
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- 2003
Barrier Layers and Pulsed Laser Annealing Effects on TFEL Device with Cu and Ag co-doped SrS blue Phosphor Layer
- Nam, Tae-Sung (School of Engineering(EEE), The Nottingham Trent University) ;
- Liew, Shan-Chun (School of Engineering(EEE), The Nottingham Trent University) ;
- Koutsogeorgis, Demosthenes C (School of Engineering(EEE), The Nottingham Trent University) ;
- Cranton, Wayne M (School of Engineering(EEE), The Nottingham Trent University)
- Published : 2003.07.09
Abstract
In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.
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