• 마이크로전자및패키징학회지
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• 제13권4호
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• pp.1-7
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• 2006

WLCSP(wafer level chip size package)는 웨이퍼 레벨에서 패키지 공정이 이루어지는 차세대 패키지 중 하나이다. WLCSP는 웨이퍼 레벨에서 패키지 공정이 이루어진다는 특징으로 인하여 웨이퍼당 생산되는 반도체 칩의 수에 따라 그 패키징 비용을 크게 줄일 수 있다는 장점이 있다. 그러나 응력 버퍼 역할을 하는 기판을 없애는 혁신적인 구조로 인하여 솔더 조인트의 신뢰성이 기존의 BGA 패키지에 비하여 취약하게 되는데, 이러한 솔더 조인트 신뢰성에 대하여 반도체 칩과 솔더볼을 연결하는 폴리머 절연층은 열팽창계수 차이에 의해 발생하는 응력을 흡수하는 중요한 역할을 하게 된다. 본 연구에서는 하이닉스에서 개발한 Omega-CSP를 사용하여 솔더볼 배열 변화와 제 1 절연층의 특성에 따른 솔더 조인트의 열피로 특성을 평가하였다. 그 결과 절연층의 특성 변화가 솔더 조인트의 열피로 특성에 주는 영향은 솔더볼 배열 구조에 따라 변화되는 것을 확인하였다.

• 한국재료학회지
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• 제23권3호
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• pp.206-210
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• 2013

In the segmented-in-series solid-oxide fuel cells (SIS-SOFCs), fabrication techniques which use decalcomania paper have many advantages, i.e., an increased active area of the electrode; better interfacial adhesion property between the anode, electrolyte and cathode; and improved layer thickness uniformity. In this work, a cell-stack was fabricated on porous ceramic flattened tube supports using decalcomania paper, which consists of an anode, electrolyte, and a cathode. The anode layer was $40{\mu}m$ thick, and was porous. The electrolyte layers exhibited a uniform thickness of about $20{\mu}m$ with a dense structure. Interfacial adhesion was improved due to the dense structure. The cathode layers was $30{\mu}m$ thick with porous structure, good adhesion to the electrolyte. The ohmic resistance levels at 800, 750 and $700^{\circ}C$ were measured, showing values of 1.49, 1.58 and $1.65{\Omega}{\cdot}cm^2$, respectively. The polarization resistances at 800, 750 and $700^{\circ}C$ were measured to be 1.63, 2.61 and $4.17cm^2$, respectively. These lower resistance values originated from the excellent interfacial adhesion between the anode, electrolyte and cathode. In a two-cell-stack SOFC, open-circuit voltages(OCVs) of 1.915, 1.942 and 1.957 V and maximum power densities(MPD) of 289.9, 276.1 and $220.4mW/cm^2$ were measured at 800, 750 and $700^{\circ}C$, respectively. The proposed fabrication technique using decalcomania paper was shown to be feasible for the easy fabrication of segmented-in-series flattened tube SOFCs.

• 한국태양에너지학회 논문집
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• 제33권2호
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• 한국재료학회지
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• 제19권5호
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• pp.245-252
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• 2009

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glass substrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a high transmittance of above 80% in the visible range and a low electrical resistivity of $4.5{\times}10^{-4}{\Omega}{\cdot}cm$. The surface morphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature, working pressure, and etching time in the etching process. The optimized surface morphology with a crater shape is obtained at a heater temperature of $350^{\circ}C$, working pressure of 0.5 mtorr, and etching time of 45 seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) are significantly affected by the resulting surface morphologies of textured films. The film surfaces, having uniformly size-distributed craters, represent good light scattering properties of high haze and ADF values. Compared with commercial Asahi U ($SnO_2$:F) substrates, the suitability of textured ZnO:Al films as front electrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical and optical properties.

• Journal of Microbiology and Biotechnology
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• 제28권8호
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• pp.1360-1366
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• 2018

The fungi associated with termites secrete enzymes such as laccase (multi-copper oxidase) that can degrade extracellular wood matrix. Laccase uses molecular oxygen as an electron acceptor to catalyze the degradation of organic compounds. Owing to its ability to transfer electrons from the cathodic electrode to molecular oxygen, laccase has the potential to be a biocatalyst on the surface of the cathodic electrode of a microbial fuel cell (MFC). In this study, a two-chamber MFC using the laccase-producing fungus Galactomyces reessii was investigated. The fungus cultured on coconut coir was placed in the cathode chamber, while an anaerobic microbial community was maintained in the anode chamber fed by industrial rubber wastewater and supplemented by sulfate and a pH buffer. The laccase-based biocathode MFC (lbMFC) produced the maximum open circuit voltage of 250 mV, output voltage of 145 mV (with a $1,000{\Omega}$ resistor), power density of $59mW/m^2$, and current density of $278mA/m^2$, and a 70% increase in half-cell potential. This study demonstrated the capability of laccase-producing yeast Galactomyces reessii as a biocatalyst on the cathode of the two-chamber lbMFC.

• Journal of Electrochemical Science and Technology
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• 제1권1호
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• pp.50-56
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• 2010

$La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ (LSCF) powders with different particle sizes, synthesized through a citrate complexation method and a gel-casting technique, are used to fabricate porous LSCF cathodes with graded microstructures via tape casting. To create porous electrodes with desired porosity and pore structures, graphite and starch are used as pore former for different layers of the graded cathode. Examination of the microstructures of the as-prepared LSCF cathode using an SEM revealed that both grain size and porosity changed gradually from the catalytically active layer (near the electrodeelectrolyte interface) to the current collection layer (near the electrode-interconnect interface). Impedance analysis showed that a 3-layer LSCF cathode with graded microstructures exhibited much-improved performance compared to that of a single-layer LSCF cathode, corresponding to interfacial resistance of 0.053, 0.11, and 0.27 $\Omega{\cdot}cm^2$ at 800, 750, and $700^{\circ}C$ respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.6-7
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• 2008

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450V power MOSFET devices by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5\times10^{14}cm^{-3}$, size of $600{\mu}m^2$ with 4.5 $\Omega$, and off-state leakage current below 50 ${\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods is meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.349-349
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• 2008

유비쿼터스 시대를 맞이하여 현재의 전자제품은 고주파 환경에서의 소형화된 마이크로파 소자를 요구하고 있다. 현재 구현되고 있는 마이크로파 소자의 형태는 여러 가지 전송선로 중에 하나로서 금속의 그라운드면 위에 유전체 막을 형성하고 그 위에 금속선을 정밀하게 패터닝하여 각 종 소자를 연결하는 microstrip line의 형태가 많이 사용된다. 이러한 microstrip line 형태의 소자를 설계할 시에 소자 자체의 구조나 유전체 막이 그 소자의 성능을 크게 좌우한다. 여기서 유전체 막은 신호선과 그라운드면 간의 전자파를 집중시켜주어 방사손실을 줄여주는 역할을 한다. 유전체 막의 두께는 소자의 전체적인 크기를 결정하는 요인이 된다. 이는 유전체 막의 두께가 감소할 경우 50 $\Omega$ 임피던스 매칭을 위해 막 위에 형성되는 소자들의 선폭도 동시에 줄여야 하므로 소자의 소형화도 가능 하여진다. 하지만 유전체 막의 두께가 감소할 경우 전자파가 유전체 막에 집중되지 못하여 방사손실이 커지게 되고 소자의 성능이 저하된다. 이런 점을 고려할 때 소자의 소형화를 만족시키면서 동시에 소자의 성능을 유지할 수 있는 유전체 막의 최적화 두께에 대한 연구가 필요하다. 볼 연구에서는 유전체 막의 최적화 두께를 제시하기 위해 대표적 마이크로파 소자인 Edge-Coupled Filter에 대하여 3-D Electromagnetic Simulator로 설계하고 유전체 막의 두께와 Filter 성능 간의 관계를 연구하였다. Filter의 성능은 유지하도록 하면서 유전체 막의 두께를 감소시켜 나간 결과, 약 30 ~ 40 ${\mu}m$ 의 최적화 두께를 얻을 수 있었다. 한편 30 ~ 40 ${\mu}m$ 두께의 후막 공정을 고려할 때 기존의 성막공정으로는 성막시간, 공정의 난이도, 공정온도 등의 면에서 난점이 존재하며 이러한 점들을 극복할 수 있는 Aerosol Deposition Method의 적용 가능성에 대해서 연구하였다.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.831-835
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• 2013

In this study, we fabricated a micro $Pb(Zr,Ti)O_3$ (PZT) film piezoelectric cantilever with a Si proof mass and dual beams through MEMS process. The size of the beam and the integrated Si proof mass were about $4,320{\mu}m{\times}290{\mu}m{\times}12{\mu}m$ and $1,380{\mu}m{\times}880{\mu}m{\times}450{\mu}m$ each. To reduce the air damping and have the larger displacement of dual beams was used for design. After mounting micro PZT film piezoelectric cantilever on shaker, we measured the resonance frequency and a output voltage while making resonant frequency changed. The resonant frequency and the highest average power of the cantilever device were 110.2 Hz and 0.36 ${\mu}W$ each, at 0.8 g acceleration and 23.7 $k{\Omega}$ load resistance, respectively.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.