• 한국전자파학회논문지
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• 제16권7호
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• pp.732-739
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• 2005

본 논문에서는 E-평면 T형 분기 도파관을 갖는 Ka대역(20/30 GHz) 다이플렉서의 설계 및 구현에 관해 논하였다. 본 논문의 도파관 다이플렉서는 송신 필터 및 수신 필터를 E-평면 T형 분기 도파관으로 연결하여 E-평면으로 대칭이 되도록 하였다. T형 분기 도파관을 E-평면으로 선택한 이유는 제작시 생기는 절단면을 전류 밀도가 가장 낮은 지역에 두어 PIM(Passive Intermodulation) 레벨을 줄이기 위해서이다. 본 논문의 다이플렉서는 등가 모델을 사용하여 최적 설계를 수행함으로써 해석 시간을 줄이고자 하였다. 또한, 고전력 전송이 가능한 구조로 설계한 후 멀티팩션 해석을 수행하였으며, 해석 결과는 12 dB 마진을 확보하여 ESA/ESTEC 권고 사항을 만족함을 보였다. 제작된 다이플렉서는 전기적 성능 시험 결과를 통해 송수신 대역에서 반사 손실 22 dB 이상, 삽입 손실 0.20 dB 이하, 그리고 -40 dB 이하의 격리도 특성을 가져 요구 사항을 만족함을 보였고, 이로써 설계 결과가 검증되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.59-65
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• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• Parasites, Hosts and Diseases
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• 제28권4호
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• pp.197-206
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• 1990

MDCK세포간에 형성된 tight junction이 Toxoplasma gondii이 숙주세포 침투에 미치는 영향에 대하여 고찰 하기 위해 여러 조건의 세포배양을 시행하였다. MDCK세포를 25-well배양기 내의 18-mm cover glass에 $1{\times}10^5,{\;}3{\times}10^5{\;}및{\;}5{\times}10^5$ 개로 분주한 후 배양 1, 2, 3 및 4일에 다수의 Toxoplasma를 첨가하여 1시간 동안 배양한 다음 Giemsa 용액으로 염색한 후 관찰하였을 때, 각 실험군에서 침투한 원충의 숫자는 숙주세포가 포화밀도를 이루면서 급격히 감소하였다. 배양액 내의 calcium 농도를 일반적인 1.8mM에서 $5{\;}{\mu}M$로 낮추어 포화밀도의 MDCK 세포간에 tight junction 형성을 억제하였을 때, 원충의 침투가 약 2배 증가하였으며(p<0.05) 포화밀도 이전의 배양에서는 원충의 침투가 감소하였다. Trypsin-EDTA를 처리하여 포화밀도의 배양에서 tight junction을 소화 시킨 경우, 원충의 침투가 약 2.5배 증가하였으며 (p<0.05) 포화밀도 이전의 배양에서는 급격히 감소하였다. 이상의 결과들로 볼 때, 포화밀도의 MDCK세포간에 형성된 tight junction이 Toxoplasma의 침투를 억제하는 것을 알 수 있었다. 이는 Toxoplasma가 숙주세포로 침투할 때 숙주세포의 막구조에 대한 특이성이 있음을 시사 하며, 상피세포에서는 tight junction 위의 막(apical membrane) 보다 옆 및 아래의 막(basolateral membrane)상의 구조를 이용하는 것으로 추정되었다.

• 한국진공학회지
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• 제9권2호
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• pp.167-171
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• 2000

AlGaAs/GaAs HBT의 동작특성에 미치는 에미터 구조의 영향을 조사하였다. 에미터의 크기 변화에 의해 차단주파수와 최대공진주파수가 변화하였으며, 이는 에미터 구조에 따라 저항과 접합용량이 변하기 때문이다. 또한 에미터의 주변길이와 접합면적도 HBT의 고주파 특성에 영향을 미치는 것을 알 수 있다.

• 전자공학회논문지A
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• 제31A권7호
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• pp.95-101
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• 1994

A novel concept for the analysis of planar devices with a field limiting ring(FLR) is presented which allows analytic expressions in a normalized form for the potential distributions of FLR structure. Based on the method of image charges the main and ring junctions with identical cylindrical edges are kept to be two different equipotential surfaces. The potential relations between main and ring junction of the FLR structure are compared with 2-dimensional device simulation program. MEDICI. A good accordance is found. Comparisions with experimental data reported for the optimum ring spacing and the relative improvement of the breakdowm voltages in the FLR sturcture show the validity of the concept. The normalized expressions allow a universal application regardless to the junction depths and background doping levels.

• Architectural research
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• 제8권2호
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• pp.37-42
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• 2006

Starting from the quadratic optimal control algorithm, this study obtains the relation of the performance index for constrained systems and Gauss's principle. And minimizing a function of the variation in kinetic energy at constrained and unconstrained states with respect to the velocity variation, the dynamic equation is derived and it is shown that the result compares with the generalized inverse method proposed by Udwadia and Kalaba. It is investigated that the responses of a 10-story building are constrained by the installation of a two-bar structure as an application to utilize the derived equations. The structural responses are affected by various factors like the length of each bar, damping, stiffness of the bar structure, and the junction positions of two structures. Under an assumption that the bars have the same mass density, this study determines the junction positions to minimize the total dynamic responses of the structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• 대한전기학회논문지
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• 제45권3호
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• pp.386-392
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• 1996

Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

• 한국통신학회논문지
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• 제21권4호
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• pp.1048-1058
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• 1996

본 논문에서는 이중모드 공동 공진기로 구성된 송.수신 필터와 H-면 T-junction를 이용하여 Ku-band용 소형 듀플렉서를 설계.제작하였다. 듀플렉서는 송신 12.5GHz와 수신 14.5GHz에서 대역폭 100MHz를 갖도록 설계하였다. 설계.제작된 듀플렉서는 송신(TX) 및 수신(RX)필터를 이중모드 필터로 구성하여 공동 공진기 필터 구조를 갖는 기존의 듀플렉서에 비해서 크기를 약 40%이상 감소시키는 결과를 얻을 수 있었다. 듀플렉서의 동작특성은 H-면 T-junction부와 필터간의 정합시 각 필터의 특성이 왜곡되지 않도록 컴퓨터 시뮬레이션하였다. 이러한 결과 필터 자체의 특성과 듀플렉서 연결 후 특성은 거의 일치하는 결과를 얻을 수 있었다.