• Carbon letters
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• v.10 no.4
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• pp.325-328
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• 2009

This cycloaddition of [70]fullerene with methyl azidoacetate in benzene under ultrasonic irradiated condition afforded the closed [5,6]-bridged aziridino[70]fullerene derivative, which was unusual product of cycloaddition to the 5,6-junction of fullerene. Its structure was determined by FAB-MS, UV-vis, $^1H-$ and $^{13}C$-NMR spectral data. The closed [5,6]-bridged aziridino[70]fullerene-functionalized gold nanoparticle films were self-assembled using the layer-by-layer method on the reactive of glass slides functionalized with 3-mercaptopropyl trimethoxysilane. The functionalized glass slides were alternately soaked in the solution containing closed the [5,6]-bridged aziridino[70]fullerene and 4-aminothiophenoxide/hexanethiolate-protected gold nanoparticles. The closed [5,6]-bridged aziridino[70]fullerene-functionalized gold nanoparticle films have grown up to 5 layers depending on the immersion time. The self-assembled nanoparticle multilayer films were characterized using UV-vis spectroscopy showed that the surface plasmon band of gold at 527 nm gradually became more evident as successive layers were added to the films.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.204-206
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• 1993

In this paper we represented electroplating process without seed layers for making metal micro structures needed for applying terminal voltage for one-to-one cell fusion system. In this system, we need thick insulator and metal structures because the diameter of a cell is approximately $40{\mu}m$. So, we adopted the photo-sensitive polyimide as electroplating molds and structural material. Generally, the processes utilizing the photo-sensitive polyimide as molds have metal seed layers on the substrate as electroplating electrodes and requires wiring tasks to these seed layers. We proposed electroplating process without any seed layer on the Si-substrate and simulated P-N-P (electrode - Si substrate - electrode) junction on N-type silicon substrate. Leakage current from one metal structure to another which arise when terminal voltage is applied can be remarkably decreased by doping Boron in the region to be electroplated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Journal of IKEEE
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• v.22 no.2
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• pp.339-343
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• 2018

Power semiconductors are semiconductors capable of controlling power over 1W and are mainly used as switches. This power semiconductor device has been developed with the goal of reducing power consumption and high breakdown voltage. This research was analyzed electrical characteristics of IGBT(Insulated Gate Biopolar Transistor) according to diffusion length of JFET region. The Diffusion length of JFET region was controlled by temperature and time using T-CAD simulator. As a result of experiments, we could obtain 1.14V low on state voltage drop by fixing 1440V breakdown voltage.

• Journal of Korean Association for Spatial Structures
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• v.16 no.4
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• pp.45-52
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• 2016

The single layer latticed domes have attracted many designers and researchers's attention all of the world, because these structures as spatial structure are of great advantage in not only mechanical rationality but also function, fabrication, construction and economic aspect. But single layer latticed domes are apt to occur the unstable phenomena that are called "buckling" because of the lack of strength of members, instability of structural shape, etc. In the case of latticed dome, there are several types of buckling mode such as overall buckling, local buckling, and member buckling according to the shape of dome, section type of member, the size of member, junction's condition of member and so on. There are many methods to increase the buckling strength of the single layer latticed dome, that is, with the change of geometrical shape of dome, the reinforcement of buckled member, etc. Therefore, the purpose of this study is to verify the reinforcement effect of buckled member when designers reinforce the buckled member to increase the buckling strength of single layer latticed dome with 3-way grid.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• BMB Reports
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• v.39 no.5
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• pp.607-617
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• 2006

A novel calcium-dependent protein kinase gene (designated as IiCPK2) was cloned from tetraploid Isatis indigotica. The full-length cDNA of IiCPK2 was 2585 bp long with an open reading frame (ORF) of 1878 bp encoding a polypeptide of 625 amino acid residues. The predicted IiCPK2 polypeptide included three domains: a kinase domain, a junction domain (or autoinhibitory region), and a C-terminal calmodulin-like domain (or calcium-binding domain), which presented a typical structure of plant CDPKs. Further analysis of IiCPK2 genomic DNA revealed that it contained 7 exons, 6 introns and the length of most exons was highly conserved. Semi-quantitative RT-PCR revealed that the expression of IiCPK2 in root, stem and leaf were much higher in tetraploid sample than that in diploid progenitor. Further expression analysis revealed that gibberellin ($GA_3$), NaCl and cold treatments could up-regulate the IiCPK2 transcription. All our findings suggest that IiCPK2 might participate in the cold, high salinity and GA3 responsive pathways.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.11
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• pp.3507-3515
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• 1996

This paper presents an attempt to find the physical structure of dynamic systems which achieves the behavior of a given system function. The scheme pursued by the paper would be regarded as synthesizing dynamic systems, and a method to synthesize them analytically is proposed by means of bond graph prototypes. The method adopts several conceptsused to synthesize networks in the electrical field, but yet deconstrates its own strengths such as the freedom from assigning causality and determining junction types. Also, itis shown that this method has further advantages in reticulating a given specification into feedforward and feedback components relative to network synthesis and the method is examined though an example to trace the outline of the analytical synthesis of dynamic systems using bond graph prototypes.

• Structural Engineering and Mechanics
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• v.50 no.6
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• pp.797-816
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• 2014

Cooling tower is analyzed as an assembly of layered nonlinear shell elements. Geometric representation of the shell is enabled through layered nonlinear shell elements to define the different layers of reinforcements and concrete by considering the material nonlinearity of each layer for the cooling tower shell. Modal analysis using Ritz vector analysis and nonlinear time history analysis by direct integration method have been carried out to study the effects of the inclination of the supporting columns of the cooling tower shell on its dynamic characteristics. The cooling tower is supported by I-type columns and ${\Lambda}$-type columns supports having the different inclination angles. Relevant comparisons of the dynamic response of the structural system at the base level (at the junction of the column and shell), throat level and at the top of the tower have been made. Dynamic response of the cooling tower is found to be significantly sensitive to the change of the inclination of the supporting columns. It is also found that the stiffness of the structure system increases with increase in inclination angle of the supporting columns, resulting in decrease of the period of the structural system. The participation of the stiffness of the tower in structural response of the cooling tower is fund to be dependent of the change in the inclination angle and even in the types of the supporting columns.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.72-78
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• 1990

In this paper, the physical meanings of LDD optimization are treated by numerical simulation and related experiments are attempted to analyzed the optimized LDD structure. Firstly, according to the numerical analysis, the electric field under the n-region near drain is low and uniformly distributed and the current flow is widely distributed in this region under the optimized conditions. It is also found that this optimized point should be achieved by globally optimizing all the process and electrical conditions. Secondly, the maximum electric field, which is obtained from the substrate current to the drain current ratio, is minimized under the optimized condition according to the experiment. Further, the device lifetime is maximized and the n-resistance is changed smoothly from the channel resistance to the $n^+$junction resistance.