• Molecules and Cells
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• v.23 no.2
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• pp.228-238
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• 2007

Since molecular structure of hnRNP is not available in foreseeable future, it is best to construct a working model for hnRNP structure. A geometric problem, assembly of $700{\pm}20$ nucleotides with 48 proteins, is visualized by a frame work in which all the proteins participate in primary binding, followed by secondary, tertiary and quaternary binding with neighboring proteins without additional import. Thus, 40S hnRNP contains crown-like secondary structure (48 stemloops) and appearance of 6 petal (octamers) rose-like architectures. The proteins are wrapped by RNA. Co-transcriptional folding for RNP fibril of FMR1 gene can produce 2,571 stem-loops with frequency of 1 stem-loop/15.3 nucleotides and 53 40S hnRNP beaded structure. By spliceosome driven reactions, there occurs removal of 16 separate lariated RNPs, joining 17 separate beaded exonic structures and anchoring EJC on each exon junction. Skipping exon 12 has 5'GU, 3'AG and very compact folding pattern with frequency of 1 stem-loop per 12 nucleotides in short exon length (63 nucleotides). 5' end of exon 12 contains SS (Splicing Silencer) element of UAGGU. In exons 10, 15 and 17 where both regular and alternative splice sites exist, SS (hnRNP A1 binding site) is observed at the regular splicing site. End products are mature FMR-1 mRNP, 4 species of Pri-microRNAs derived from introns 7,9,15 and 3'UTR of exon17, respectively. There may also be some other regulatory RNAs containing ALU/Line elements as well.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.37-40
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• 2003

We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

• Nuclear Engineering and Technology
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• v.24 no.3
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• pp.297-310
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• 1992

FLECHT SEASET unblocked forced reflood tests are assessed using Apollo version of RELAP5/MOD3 5M5. The main purpose of the study is to examine the code predictability under forced reflood conditions having different initial power levels and flooding rates. Among various test matrices, the assessment calculations are performed for the test numbers 31701 31302, 31203, 31805, 34524, 31021, 34006 and 35807 These have been selected because they have similar initial conditions but different initial peak rod powers or flooding rates. In addition, various sensitivity calculations are performed for test number 31203 on the improved models of RELAP5/MOD3. Those are for the effect of Counter Current Flow Limit (CCFL) option at the outlet junction of the test section, for the effect of grid modelling on the interfacial drag calculations as well as on the heat structure calculations, and for the effect of nodalization and the time step size. The results of sensitivity studies show that the improved models of RELAP5/MOD3 enhance the code predictability. The assessment results show that the RELAP5/MOD3 has a tendency to underpredict the turn around temperature and the turn around time. But RELAP5/MOD3 silghtly overpredicts the turn around temperature for high flooding rate. The results also show that the calculated quenching by RELAP5/MOD3 is delayed with the increase of the rod power or the decrease of the flooding rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.332-336
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• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.3
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• pp.429-438
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• 1994

Three-dimensional analyses of multistory structures with wings using finite element models require tedious input data preparation, longer computation time. and larger computer memory. So this study lays emphasis on the development of efficient analysis models for a three-dimensional multistory structure with wings, including in-plane deformation of floor slabs. Since a three-dimensional multistory structure with wings is regarded as a combination of wing structures and their junction in this study, the proposed analysis models are easily applicable to multistory structures with plans in the shape of letters Y, U, H, etc. Dynamic analyses results obtained using proposed models are in excellent agreement to those acquired using three-dimensional finite element models in terms of natural vibration periods, mode shapes and displacement time history.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

• Journal of the Architectural Institute of Korea Structure & Construction
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• v.33 no.12
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• pp.91-98
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• 2017

In this study, the effect of window installation position in the residential building with the external insulation was numerically investigated in terms of insulation performance and heating/cooling energy consumption. For different window positions, 2-D heat transfer simulation was conducted to deduce the linear thermal transmittance, which was inputted to the dynamic energy simulation in order to analyze heating/cooling energy consumption. Simulation results showed that the linear thermal transmittance ranges from 0.05 W/mK to 0.7 W/mK, and is reduced as the window is installed near the external finish line. Indoor surface temperature and TDR analysis showed that the condensation risk is the lowest when the window is installed at the middle of the insulation and wall structure. It was also found that the window installation near the external finish can reduce the annual heating/cooling energy consumption by 12~16%, compared with the window installation near the interior finish. Although the window installation near the external finish can achieve the lowest heating/cooling energy consumption, it might lead to increased condensation risks unless additional insulation is applied. Thus, it can be concluded that the window should be installed near the insulation-wall structure junction, in consideration of the overall performance including energy consumption, condensation prevention and constructability.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.75-83
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• 2021

The tunnel oxide passivated contact (TOPCon) structure got more consideration for development of high performance solar cells by the introduction of a tunnel oxide layer between the substrate and poly-Si is best for attaining interface passivation. The quality of passivation of the tunnel oxide layer clearly depends on the bond of SiO in the tunnel oxide layer, which is affected by the subsequent annealing and the tunnel oxide layer was formed in the suboxide region (SiO, Si₂O, Si₂O₃) at the interface with the substrate. In the suboxide region, an oxygen-rich bond is formed as a result of subsequent annealing that also improves the quality of passivation. To control the surface morphology, annealing profile, and acceleration rate, an oxide tunnel junction structure with a passivation characteristic of 700 mV or more (V_oc) on a p-type wafer could achieved. The quality of passivation of samples subjected to RTP annealing at temperatures above 900℃ declined rapidly. To improve the quality of passivation of the tunnel oxide layer, the physical properties and thermal stability of the thin layer must be considered. TOPCon silicon solar cell has a boron diffused front emitter, a tunnel-SiO_x/n⁺-poly-Si/SiN_x:H structure at the rear side, and screen-printed electrodes on both sides. The saturation currents J_o of this structure on polished surface is 1.3 fA/cm² and for textured silicon surfaces is 3.7 fA/cm² before printing the silver contacts. After printing the Ag contacts, the J_o of this structure increases to 50.7 fA/cm² on textured silicon surfaces, which is still manageably less for metal contacts. This structure was applied to TOPCon solar cells, resulting in a median efficiency of 23.91%, and a highest efficiency of 24.58%, independently. The conversion efficiency of interdigitated back-contact solar cells has reached up to 26% by enhancing the optoelectrical properties for both-sides-contacted of the cells.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.69.2-69.2
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• 2010

Recently, bulk hetero-junction cells have been extensively studied by many researchers. Most of these cells were fabricated by spin coater. However, the spin coating process is not favorable to the large-scaled industry because it is not compatible with roll-to-roll process. One of the alternative methods is Doctor blading. In this study, we fabricated large OPV cells having total area of $100cm^2$. The buffer layer was Poly-(3,4-ethylenedioxythiophene) : poly-(styrenesulfonate) aqueous dispersion (PEDOT:PSS) and the active material is poly (3-hexythiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blend in the solvent of Chlorobenzene. All of the organic layers were coated by dragging the blade with a speed of 5~20 mm/s on the stage with a temperature of $50^{\circ}C$. As-bladed PEDOT:PSS layer was baked at $120^{\circ}C$ for 10 minutes to eliminate the water. The cell structure is patterned ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al. The topmost electrode, LiF/Al, was deposited by thermal evaporation. After depositing electrode, and the cell was annealed at $150^{\circ}C$ for 30 minutes. The measured ISC, VOC, fill factor, and PCE were 2.95 A, 5.86 V, 0.32, and 0.78%, respectively. PCE was quite low but the large active area could be obtained successfully.