• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1369-1374
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• 1989

Electrical characteristics at the p-GaP semiconductor/CsNO3 electrolyte interfaces were investigated. It is found that such interfacial phenomena are well analyzed by semiconductor-semiconductor pn junction diode models and image charge effects of semiconductor-vacuum interfaces. The formation processes of electrical double layers and their potential variations are verified using cyclic voltammetric methods. The interfacial current are influenced by Cs+ ion coverage onto the semiconductor electrode surface and structure of electrical double layer.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.847-850
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• 1998

This paper proposes a new scheme of FLR for improving corner breakdown voltage. The major difference from the conventional FLR is to build extra rings and floating field plates in the corner region. In this structure the additional field plate and ring have reduced th electric field at the junction in the corner region. Thus it improves the breakdown characteristics which are critical for obtaining high breakdown voltage.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.70-71
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• 2002

터널 접합 소자은 절연층을 사이에 둔 두 강자성체로 이루어지는 데 두 강자성체의 서로 다른 보자력 차이로 인가해주는 자장의 방향에 기인한 spin들의 평행함과 반평행함에 의해 나타나는 자기 저항 현상을 이용한 것이다. 이 TMR 현상은 비휘발성, 고집적도, 적은 전력손실로 인해 차세대 RAM으로 사용될 것으로 보이는 MRAM 소자로써의 적용을 위해 연구 중에 있다. 그러나 TMR소자 공정중에서 비중이 큰 절연층 형성에서의 여러 요인의 개입으로 인해 고른 절연층 형성이 어려운 실정이다. (중략)

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1372-1373
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current- voltage characteristics.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.10a
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• pp.391-395
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• 1997

The transmission of sound and vibration through structures is of interest in many noise control problems, including architectural acoustics, sound transmission through air craft, spacecraft and ship, and the transmission of noise through machinery and engine enclosures. Statistical Energy Analysis provides a simple and accurate method of approaching these problems. In this paper, comparing the measured coupling loss factor of plate-beam with measured coupling loss factor of mass on the junction will be inspected.

• New & Renewable Energy
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• v.4 no.2
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.10
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• pp.1464-1471
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• 2003

In order to investigate the flows with shock wave in branch, 108$^{\circ}$ elbow and T-junction of the IRWST system of standard Korean nuclear reactor, detail time dependent behaviors of unsteady flow with shock wave, vortex and so on are obtained by numerical method using compressible three-dimensional Navier-Stokes equations. At first, the complex flow including the incident and reflected shock waves, vortex and expansion waves which are generated at the corner of T-junction is calculated by the commercial code of FLUENT6 and is compared with the experimental result to obtain the validation of numerical method. Then the flow fields in above mentioned units are analyzed by numerical method of [mite volume method. In numerical analysis, the distributions of flow properties with the moving of shock wave and the forces acting on the wall of each unit which can be used to calculate the size of supporting structure in future are calculated specially. It is found that the initial shock wave of normal type is re-established its type from an oblique one having the same strength of the initial shock wave at the 4 times hydraulic diameters of downstream from the branch point of each unit. Finally, it is turned out that the maximum force acting on the pipe wall becomes in order of the T-junction, 108$^{\circ}$ elbow and branch in magnitude, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.2
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• pp.257-267
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• 2001

This paper presents a design for a single-layer feeder waveguide array using $\pi$-junctions with the inductive wall. The feed structure consists of a single waveguide placed on the same layer as radiating waveguide and is characterized by the unit divider, called a $\pi$-junction. This $\pi$-junction with an inductive wall splits part of the power into two branchs waveguide through one coupling window, and can excite densely arrayed waveguide at equal phase and amplitude. The power dividing characteristics of the cascade of $\pi$ -junctions are analyzed by Galerkin's method of moments. The numerical results show reasonable agreement with the experimental results. From the optimum simulation results based on the feeder waveguide using $\pi$-junction, we obtained the scattering matrices of the feeder divided power at 3.95 GHz.

• Journal of Periodontal and Implant Science
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• v.23 no.1
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• pp.159-169
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• 1993

The thirty six mandibular second molars, which were extracted because of hopeless tooth due to advanced periodontal disease, were measured the length of mesial and distal root and the distance from cementoenamel junction to root separation. The molars were cross-sectioned every 1.5 milimeter from cementoenamel junction to root apex perpendicular to long axis and each section was photographed, projected and measured with a calibrated Digital Curvi-Meter(Com Curvi-8. Japan). The root surface area (RSA), percentage of the RSA and the linear variation of the RSA were calibrated for each 1. 5 mm section. The results were as follows. 1. The mean length of the roots was 12. 98mm for mesial root, 11.84 mm for distal root. The mesial root was longer than distal root.(p<0.01) 2. The mean distance from the cementoenamel junction to the point at which the root separate from the root trunk was 3.82mm for the buccal furcation and 4.75mm for lingual furcation. The buccal root separation was coronal than the lingual root separation.(p<0.01) 3. The total root surface area was $317.78mm^2$. 4. The mean surface area of the root trunk was $150.06mm^2$ and averaged 42.54% of the total root surface area. 5. The mean root surface area was $88.79\;mm^2$ for the mesial root, $78.93mm^2$ for distal root, The mesial root surface area was wider than the distal root surface area.(p<0.05) 6. In comparision, the mean root trunk surface area of the mandibular 2nd molar was wider than that of mandibular 1st molar(p<0.01), but each root of 2nd molar was smaller than that of 1st molar(p<0.01).