Fabrication of planar type GaInAs PIN photodiode and its characteristics

평면형 GaInAs/InP PIN Photodiode 제작 및 특성

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.