• Title/Summary/Keyword: high Permittivity

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Electrical Conduction Property of the Carbon Black-Filled Polyethylene Matrix Composites Below the Percolation Threshold (문턱스며들기 이하 카본블랙 충진 폴리에칠렌기지 복합재료의 전기전도 특성)

  • Shin, Soon-Gi
    • Korean Journal of Materials Research
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    • v.20 no.5
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    • pp.271-277
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    • 2010
  • In this paper two aspects of the percolation and conductivity of carbon black-filled polyethylene matrix composites will be discussed. Firstly, the percolation behavior, the critical exponent of conductivity of these composites, are discussed based on studying the whole change of resistivity, the relationship between frequency and relative permittivity or ac conductivity. There are two transitions of resistivity for carbon black filling. Below the first transition, resistivity shows an ohmic behavior and its value is almost the same as that of the matrix. Between the first and second transition, the change in resistivity is very sharp, and a non-ohmic electric field dependence of current has been observed. Secondly, the electrical conduction property of the carbon black-filled polyethylene matrix composites below the percolation threshold is discussed with the hopping conduction model. This study investigates the electrical conduction property of the composites below the percolation threshold based on the frequency dependence of conductivity in the range of 20 Hz to 1 MHz. There are two components for the observed ac loss current. One is independent of frequency that becomes prevalent in low frequencies just below the percolation threshold and under a high electrical field. The other is proportional to the frequency of the applied ac voltage in high frequencies and its origin is not clear. These results support the conclusion that the electrical conduction mechanism below the percolation threshold is tunneling.

The built-in sensor bearing to measure shaft behavior of compressor for air-conditioning (공조용 압축기 축 거동 측정용 베어링 내장형 센서)

  • 김지운;안형준;김지영;한동철;윤정호;황인수
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2001.11a
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    • pp.230-236
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    • 2001
  • We developed a built-in sensor bearing to measure the rotor motion of a rolling piston type compressor for the air conditioner. Because of needs for the high efficiency and long life span of compressor, and the usage of alternative refrigerants, the operating condition of the compressor becomes more severe. The accurate measurement of the rotor motion of the compressor can contribute greatly to the design and analysis of the hydrodynamic bearing. However, it is difficult to measure accurately the shaft behavior of small compressor because of the small space for the sensor mount, high temperature and pressure of compressor, oil mixed with refrigerant, and electromagnetic noise of the motor. To overcome these difficulties, we develop the cylindrical capacitive sensor that is built in the hydrodynamic bearing and calibrate the built-in sensor bearing indirectly through measuring the oil relative permittivity. We measured the rotor motion as well as suction and discharge pressures in various conditions. The several experimental results show that the developed built-in sensor bearing can measure the rotor motion not only in steady state but also in transient state.

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Suppression of Dielectric Loss at High Temperature in (Bi1/2Na1/2)TiO3 Ceramic by Controlling A-site Cation Deficiency and Heat Treatment

  • Lee, Ju-Hyeon;Lee, Geon-Ju;Pham, Thuy-Linh;Lee, Jong-Sook;Jo, Wook
    • Journal of Sensor Science and Technology
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    • v.29 no.1
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    • pp.7-13
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    • 2020
  • Dielectric capacitors are integral components in electronic devices that protect the electric circuit by providing modulated steady voltage. Explosive growth of the electric automobile market has resulted in an increasing demand for dielectric capacitors that can operate at temperatures as high as 400 ℃. To surpass the operation temperature limit of currently available commercial capacitors that operate in temperatures up to 125 ℃, Bi1/2Na1/2TiO3 (BNT), which has a large temperature-insensitive dielectric response with a maximum dielectric permittivity temperature of 300 ℃, was selected. By introducing an intentional A-site cation deficiency and post-heat treatment, we successfully manage to control the dielectric properties of BNT to use it for high-temperature applications. The key feature of this new BNT is remarkable reduction in dielectric loss (0.36 to 0.018) at high temperature (300 ℃). Structural, dielectric, and electrical properties of this newly developed BNT were systematically investigated to understand the underlying mechanism.

The Characteristics of the Output Voltage Ferroelectrics for High Voltages Pulse Generators (고전압 펄스 발생기를 위한 강유전체의 전압 출력 특성)

  • Jang, Dong-Gwan;Choi, Sun-Ho;Hwang, Sunl-Mook;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.10
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    • pp.1408-1412
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    • 2013
  • High power pulse generating technology is to accumulate the energy for relatively long and then to create a strong force by emitting the energy very fast. High power pulse generating technology has recently been using in various fields like environments, industry, research, military and so on. Numerous studies about high power pulse generators have already been performed and commercialized in various conditions. However, in aspect of their size and weight, it is hard to carry the generators which currently have been developed. For these reasons, din nations like America or Russia, the researches have been performed for Ferroelectric Generators(FEG), which have relatively simple structure and are economical. To realize the ferroelectric generator, in this study, we selected the PZTs which have different physical properties respectively, and then shocked them using explosives. The PZT samples with volumes of $0.31{\sim}0.94cm^3$ were depolarized by shocked and produced the waveform that have peak voltages of 4.28 ~ 15kV. The lowest relative permittivity sample generated much higher peak voltage. And sudden voltage drops which seem to be caused by dielectric breakdown were observed in some experiments using low young's modulus samples. Also, increase in thickness led to increase in peak voltage, but the ratio of the voltage rise did not reach the ration of the thickness increase.

Improvement of Depth Profiling Analysis in $Hf_xO_y/Al_xO_y/Hf_xO_y$ structure with Sub 10 nm by Using Low Energy SIMS

  • Lee, Jong-Pil;Park, Sang-Won;Choe, Geun-Yeong;Park, Yun-Baek;Kim, Ho-Jeong;Kim, Chang-Yeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.162-162
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    • 2012
  • Sub 100 nm의 Complementary Metal-Oxide-Semiconductor (CMOS) 소자를 구동하기 위해서는 2.0 nm 이하의 $SiO_2$ oxide에 해당하는 전기적 특성이 요구된다. 그러나 2.0 nm 이하의 $SiO_2$에서는 누설 전류가 너무 크기 때문에 이를 대체하기 위해서 유전 상수 (dielectric permittivity)가 높은 $HfO_2$ (${\varepsilon}=25$), $Al_2O_3$, $HfO_2/Al_2O_3$ laminate 등의 high-k dielectric 물질들이 연구되고 있다[1]. High-k dielectric 물질의 전기적 특성은 박막 조성, 두께 및 전극과의 계면에 생성되는 계면 층이나 불순물(Impurity) 거동에 크게 의존하므로 High-k dielectric/전극(Metal or Si) 구조에서 조성 및 불순물의 거동에 대한 정확한 평가가 주요 쟁점으로 부각되고 있다. 이를 평가하기 위해 일반적으로 $Ar^+$ ion에 의한 depth profiling 분석이 진행되나 Oxygen 원자의 선택적 식각에 기인된 분석 깊이 분해능(Depth Resolution) 왜곡으로 계면 층의 형성이나 불순물의 거동을 정확하게 평가할 수 없다. 이러한 예로는 $Ta_2O_5$$SrBi_2Ta_2O_9$와 같은 다 성분 계 산화막에 $Ar^+$ ion 주사 시 발생하는 선택적인 식각(Preferential Sputtering) 때문에 박막의 실제 조성 및 거동을 평가하는 것은 어렵다고 보고된 바 있다[2,3]. 본 연구에서는 $90{\AA}$인 적층 $Hf_xO_y/Al_xO_y/Hf_xO_y$ 구조에서의 불순물 거동 분석 능력 확보 상 주요 인자인 깊이 분해능 개선을 Secondary Ion Mass Spectroscopy(SIMS)의 primary ion 종, impact energy 및 주사 각도를 변화시켜 ~1 nm 수준까지 구현하였다. 이러한 분석 깊이 분해능의 개선은 Low Impact Energy, 입사 이온의 glancing angle 및 Cluster ion 적용에 의존하며 이들 요인의 효과에 대해 비교/고찰하고자 한다.

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The Characteristic Changes of Electromagnetic Wave Absorption in Fe-based Nanocrystalline P/M Sheets Mixed with Ball-Milled Carbon Nanotubes (Fe계 나노결정립 분말 시트에 첨가된 CNT의 볼밀 공정에 따른 전자파 흡수 특성 변화)

  • Kim, Sun-I;Kim, Mi-Rae;Sohn, Keun-Yong;Park, Won-Wook
    • Journal of Powder Materials
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    • v.16 no.6
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    • pp.424-430
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    • 2009
  • Electromagnetic wave energies are consumed in the form of thermal energy, which is mainly caused by magnetic loss, dielectric loss and conductive loss. In this study, CNT was added to the nanocrystalline soft magnetic materials inducing a high magnetic loss, in order to improve the dielectric loss of the EM wave absorption sheet. Generally, the aspect ratio and the dispersion state of CNT can be changed by the pre-ball milling process, which affects the absorbing properties. After the various ball-milling processes, 1wt% of CNTs were mixed with the nanocrystalline $Fe_{73}Si_{16}B_7Nb_{3}Cu_1$ base powder, and then further processed to make EM absorption sheets. As a result, the addition of CNT to Fe-based nanocrystalline materials improved the absorption properties. However, the increase of ball-milling time for more than 1h was not desirable for the powder mixture, because the ballmilling caused the shortening of CNT length and the agglomeration of the CNT flakes.

Simulation and Fabrication Studies of Semi-superjunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer

  • Na, Kyoung Il;Kim, Sang Gi;Koo, Jin Gun;Kim, Jong Dae;Yang, Yil Suk;Lee, Jin Ho
    • ETRI Journal
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    • v.34 no.6
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    • pp.962-965
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    • 2012
  • In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer ($SiO_2$) of a conventional device is replaced by a multilayered insulator ($SiO_2/SiN_x/TEOS$) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and $1.1m{\Omega}cm^2$, respectively.

Optimization of Gate Stack MOSFETs with Quantization Effects

  • Mangla, Tina;Sehgal, Amit;Saxena, Manoj;Haldar, Subhasis;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.228-239
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    • 2004
  • In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

Implementation of the Dual Band Chip Antenna for WLAN (WLAN용 이중대역 칩 안테나 구현)

  • Kang, Jeong-Jin;Lee, Young-Dae;Rho, Kyung-Taeg;Choi, Jong-In
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.9 no.1
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    • pp.103-107
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    • 2009
  • In this paper, we designed and implemented a dual band chip antenna for WLAN, which contains within the small LAN card contrary to the enternal AP(Access Point) antenna. Limiting about the antenna size, we used dielectrics of high permittivity. Totally considering problems of demand-supply, price and characteristics, we used that relative dielectrics of ceramic is 9.8 and the thickness is 3.5mm and 5mm. Ceramic antenna can be used not only triple mode of IEEE 802.11.a,g and b but also broadband. The frequency bands have wideband characteristics of 2.4~2.5GHz and 4.9~5.85GHz and relatively constant performance.

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하이퍼볼릭 메타물질: 깊은 서브파장 나노포토닉스를 위한 신개념 플랫폼

  • No, Jun-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.78-78
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    • 2015
  • Metamaterials, artificially structured nanomaterials, have enabled unprecedented phenomena such as invisibility cloaking and negative refraction. Especially, hyperbolic metamaterials also known as indefinite metamaterials have unique dispersion relation where the principal components of its permittivity tensors are not all with the same signs and magnitudes. Such extraordinary dispersion relation results in hyperbolic dispersion relations which lead to a number of interesting phenomena, such as super-resolution effect which transfers evanescent waves to propagating waves at its interface with normal materials and, the propagation of electromagnetic waves with very large wavevectors comparing they are evanescent waves and thus decay quickly in natural materials. In this abstract, I will focus discussing our efforts in achieving the unique optical property overcoming diffraction limit to achieve several extraordinary metamaterials and metadevices demonstration. First, I will present super-resolution imaging device called "hyperlens", which is the first experimental demonstration of near- to far-field imaging at visible light with resolution beyond the diffraction limit in two lateral dimensions. Second, I will show another unique application of metamaterials for miniaturizing optical cavity, a key component to make lasers, into the nanoscale for the first time. It shows the cavity array which successfully captured light in 20nm dimension and show very high figure of merit experimentally. Last, I will discuss the future direction of the hyperbolic metamaterial and outlook for the practical applications. I believe our efforts in sub-wavelength metamaterials having such extraordinary optical properties will lead to further advanced nanophotonics and nanooptics research.

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