• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.585-592
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• 1993

The effects of grain size and microstructure on the ultrasonic attenuation was investigated with SCM440 steel quenched and tempered at various temperatures. The ultrasonic attenuation was primarily due to the grain boundary scattering and the ultrasonic attenuation coeffecient increased with increasing grain size. In the meantime, it was found that the ultrasonic attenuation coefficient decreased with increasing tempering temperature. The dependence of ultrasonic attenuation coefficient on the frequency of ultrasonic wave had linear relationship on a log-log scale and was proportional to the Roney's equation.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.276-280
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• 2017

This study was carried out to evaluate the developed microstructures and mechanical properties of friction welded A6063 alloy. For this work, specimens were prepared at a size of 12 mm ${\O}{\times}80mm$, and friction welding was carried out at a rotation speed of 2,000 RPM, friction pressure of $12kgf/cm^2$ and upset pressure of $25kgf/cm^2$. To perform an analysis of the grain boundary characteristic distributions, such as the grain size, orientation and misorientation angle distributions, the electron back-scattering diffraction method was used. In addition, in order to identify the dispersed intermetallic compounds of the base and welded materials, transmission electron microscopy was used. The experimental results found that the application of friction welding on A6063 led to significant grain refinement of the welded zone relative to that of the base material. Besides this, intermetallic compounds such as AlMnSi and $Al_2Cu$ were found to be dispersed with more refined size relative to that of the base material. This formation retains the mechanical properties of the welds, which results in the fracture aspect at the base material zone. Therefore, based on the developed microstructures and mechanical properties, the application of friction welding on A6063 could be used to obtain a sound weld zone.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.123-129
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• 2012

The microstructures and mechanical properties of friction stir welded lap joints of Inconel 600 and SS 400 were evaluated; friction stir welding was carried out at a tool rotation speed of 200 rpm and welding speed of 100 mm/min. Electron back-scattering diffraction and transmission electron microscopy were introduced to analyze the grain boundary characteristics and the precipitates, respectively. Application of friction stir welding was notably effective at reducing the grain size of the stir zone. As a result, the reduced average grain size of Inconel 600 ranged from $20{\mu}m$ in the base material to $8.5{\mu}m$ in the stir zone. The joint interface between Inconel 600 and SS 400 showed a sound weld without voids and cracks, and MC carbides with a size of around 50 nm were partially formed at the Inconel 600 area of lap joint interface. However, the intermetallic compounds that lead to mechanical property degradation of the welds were not formed at the joint interface. Also, a hook, along the Inconel 600 alloy from SS 400, was formed at the advancing side, which directly brought about an increase in the peel strength. In this study, we systematically discussed the evolution of microstructures and mechanical properties of the friction stir lap joint between Inconel 600 and SS 400.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.141-146
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• 2020

Thermoelectric Bi₂Te₃ thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the Fe-doped films increased whereas the electrical conductivity decreased. As a result, the power factor of the system increased owing to the enhanced Seebeck coefficient. Grain growth inhibition was detected in the Fe-doped system, which produced more grain boundaries in the Fe-doped films than in the undoped system. The increased grain boundary scattering was deemed to be effective for a reduced thermal conductivity. This is advantageous for the preparation of high-performance thermoelectric films.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.202-206
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• 2011

We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90W. GZO thin film shows the lowest resistivity of $2.2{\times}10^{-4}{\Omega}cm$ and the highest electron concentration of $1.7{\times}10^{21}cm^{-3}$ at 90W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.7 no.5
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• pp.66-71
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• 1998

It is required the superior materials for the parts of machines or structures, which could be endurable in severe load and environment. According to advancement of casting technology, nodular graphite cast iron is used as suitable for such condition. But nodular graphite cast iron is scattering of fatigue strength and low reliability. Therefore in this study, the effect of matrix structure and number of nodular graphite on the initiation of fatigue crack and fatigue strength. It was found that the material which has relatively high ferrite volume fraction was more easily cracked than other materials and fatigue limit was low. The material which has not found pinhole on the surface, the crack was initiated in graphite went through ferrite and propagated into through graphite, but separated graphite and ferrite grain boundary and combined with other cracks to fro large one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.527-534
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• 1998

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

• Korean Journal of Materials Research
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• v.22 no.6
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• pp.303-308
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• 2012

This study evaluated the enhancement of microstructural and mechanical properties of a cross rolled Ni-10Cr alloy, comparing with conventionally rolled material. Cold rolling was carried out to 90% thickness reduction and the specimens were subsequently annealed at $700^{\circ}C$ for 30 min to obtain a fully recrystallized microstructure. Cross roll rolling was carried out at a tilted roll mill condition of $5^{\circ}$ from the transverse direction in the RD-TD plane. In order to observe the deformed microstructures of the cold rolled materials, transmission electron microscopy was employed. For annealed materials after rolling, in order to investigate the grain boundary characteristic distributions, an electron back-scattering diffraction technique was applied. Application of cold rolling to the Ni-10Cr alloy contributed to notable grain refinement, and consequently the average grain size was refined from 135 ${\mu}m$ in the initial material to 9.4 and 4.2 ${\mu}m$ in conventionally rolled and cross rolled materials, respectively, thus showing more significantly refined grains in the cross rolled material. This refined grain size led to enhanced mechanical properties such as yield and tensile strengths, with slightly higher values in the cross rolled material. Furthermore, the <111>//ND texture in the CRR material was better developed compared to that of the CR material, which contributed to enhanced mechanical properties and formability.