• Journal of Powder Materials
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• v.21 no.5
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• pp.355-359
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• 2014

Pt nanopowder-dispersed $SiO_2$ (SOP) films were prepared by RF co-sputtering method using Pt and $SiO_2$ targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RF power of Pt target while that of $SiO_2$ was fixed. The roughness of the film was increased with increasing the power of Pt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed that SOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively. Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, which was explained by the significant increase of electron density.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Corrosion Science and Technology
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• v.16 no.6
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• pp.317-327
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• 2017

The change in the oxidation behavior of three types of B-added ultrahigh strength martensitic steels containing Ti and Nb induced by applying constant cathodic current was investigated. In a 3% NaCl+0.3% $NH_4SCN$ solution, the overall polarization behavior of the three alloys was similar, and degradation of the oxide film was observed in the three alloys after applying constant cathodic current. A significant increase in the anodic current density was observed in the Nb-added alloy, while it was diminished in the Ti-added alloy. Both Ti and Nb alloying decreased the hydrogen overpotential by forming NbC and TiC particles. In addition, the thickest oxide film was formed on the Ti-added alloy, but the addition of Nb decreased the film thickness. Therefore, it was concluded that the remarkable increase in the anodic current density of Nb-added alloy induced by applying constant cathodic current density was attributed to the formation of the thinnest oxide film less protective to hydrogen absorption, and the addition of Ti effectively blocked the hydrogen absorption by forming TiC particles and a relatively thick oxide film.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2182-2187
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• 2007

The relative contributions of phonon and electron to the thermal conductivity of silicon film with varying doping density are evaluated from the modified electron-phonon interaction model, which is applicable to the micro/nanoscale simulation of energy transport between energy carriers. The thermal conductivities of intrinsic silicon layer thicknesses from 20 nm to 500 nm are calculated and extended to the variation in n-type doping densities from 1.0 ${\times}$ $10^{18}$ to 5.0 ${\times}$ $10^{20}$ $cm^{-3}$, which agree well with the experimental data and theoretical model. From simulation results, the phonon and electron contributions to thermal conductivity are extracted. The electron contribution in the silicon is found to be not negligible above $10^{19}$ $cm^{-3}$, which can be classified as semimetal or metal by the value of its electrical resistivity at room temperature. The thermal conductivity due to electron is about 57.2% of the total thermal conductivity at doping concentration 5.0 ${\times}$ $10^{20}$ $cm^{-3}$ and silicon film thickness 100 nm.

• Journal of radiological science and technology
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• v.21 no.2
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• pp.5-10
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• 1998

In the mammography, X-ray beam quality is one of the most important factors. Using X-ray mammography unit model GE/CGR Senography 600T Senix H.F, Authors studied four subjects. 1. The aluminum attenuation rate in 30 kVp when used with or without compression plate. 2. HVLs at 5 different area of the X-ray field of $26{\sim}32kVp$. 3. HVLs to know the influence of corrected measurement or parallel measurement. 4. Film density with microdensitometer along and cross to the long axis of X-ray tube, in terms of the Heel effect in the X-ray field. The following results were obtained. 1. Beam quality of anode area was harder than cathode area. 2. The dose reduction rate of compression plate was approximately $65.5%{\sim}88.1%$ and the beam quality with compression plate was hardened up to 4kVp accordingly. 3. If the X-ray beam enters the attenuation plate obliquely, HVL was $2.6{\sim}2.9%$ harder than perpendicular to it. 4. Because of heel effect, the film density of cathode area is higher than anode area to film density of 0.5.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.23-26
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• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.181-184
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• 2003

In this paper, we investigated the position-dependent stress distribution of indium-tin-oxide (ITO) film on Polycarbonate (PC) substrate by external bending force. It was found that there are the maximum crack density at the center position and decreasing crack density as goes to the edge. In accordance with crack distribution, it was observed that the change of electrical resistivity of ITO islands is maximum at the center and decrease as goes to the edge. From the result that crack density is increasing at same island position as face-plate distance (L) decreases, it is evident that the more stress is imposed on same island position as L decreases.

• Laser Solutions
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• v.14 no.1
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• pp.14-18
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• 2011

Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.