• 제목/요약/키워드: ferroelectric devices

검색결과 121건 처리시간 0.024초

Theoretical Aspects of PTC Thermistors

  • Cho, Sang-Hee
    • 한국세라믹학회지
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    • 제43권11호
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    • pp.673-679
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    • 2006
  • The discovery of ferroelectric barium titanate (BaTiO$_3$) in 1942 began the present era of dielectrics-based electronic ceramics. Ferroelectric barium titanate has a high dielectric constant and after the recognition of BaTiO$_3$ as a new ferroelectric compound, various attractive electrical properties have been extensively studied and reported. Since then, pioneering work on valence-compensated semiconduction led to the discovery of the positive temperature coefficient (PTC) of the resistance effect found in doped BaTiO$_3$. Significant progress has since followed with respect to understanding the PTC phenomena, advancing materials capabilities, and developing devices for sensor and switching applications. In this paper, the theoretical aspects of the various PTC models are discussed and the future trends of practical applications for PTC devices are briefly mentioned.

BST 박막 소자의 유전특성 (The Dielectric Characteristics of BST Thin Film Devices)

  • 홍경진;민용기;신훈규;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.660-663
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    • 2001
  • The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

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Damascene 공정을 이용한 $Pb(Zr,Ti)O_3$ 캐패시터 제조 연구 (Fabrication of $Pb(Zr,Ti)O_3$ Thin Film Capacitors by Damascene Process)

  • 고필주;이우선
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.105-106
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    • 2006
  • The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.

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엘라스토머 기판 상에 제작한 유기 강유전체 메모리 소자의 전기적 특성 (Electrical Characteristics of Organic Ferroelectric Memory Devices Fabricated on Elastomeric Substrate)

  • 정순원;류봉조;구경완
    • 전기학회논문지
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    • 제67권6호
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    • pp.799-803
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    • 2018
  • We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

Random-Oriented (Bi,La)4Ti3O12 Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device

  • Lee, Youn-Ki;Ryu, Sung-Lim;Kweon, Soon-Yong;Yeom, Seung-Jin;Kang, Hee-Bok
    • Transactions on Electrical and Electronic Materials
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    • 제12권6호
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    • pp.258-261
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    • 2011
  • A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

Ferroelectric Gate Field Effect Transistor용 $Sr_2(Nb,Ta)_2O_7$박막 ($Sr_2(Nb,Ta)_2O_7$ Thin Films for Ferroelectric Gate Field Effect Transistor.)

  • 김창영;우동찬;이희영;이원재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.335-338
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    • 1998
  • Ferroelectric Sr$_2$(Nb,Ta)$_2$O$_{7}$ (SNTO) thin films were prepared by chemical solution deposition processes. SNTO thin films were spin-coated on Pt/Ti/SiO$_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. B site-rich impurity phase, i.e. [Sr(Nb,Ta)$_2$O$_{6}$], was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.s.s.

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Periodically Poled $KNbO_3$ Crystals for Quasi-Phase-Matching

  • Kim, Joong-Hyun;Lee, Sooseok;Yoon, Choon-Sup
    • 한국결정학회:학술대회논문집
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    • 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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    • pp.18-18
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    • 2002
  • Although it was suggested in 1962 that an efficient wavelength conversion could be achieved using ferroelectric crystals of periodic 180° domains, it was not until 1990's that quasi-phase-matching (QPM) became realized, as technology for periodic poling of LiNbO₃ crystals was readily available. Since ferroelectric domain inversion brings about change of the sign of second-order nonlinear susceptibility, periodically poled ferroelectric structures provide an ideal way of achieving QPM for second-harmonic generation and optical parametric oscillation. Periodically poled ferroelectric domains can also be utilized for optical devices, such as Brags electrooptic modulators. fabrication of stable periodic domain structures depends on a number of poling parameters of a ferroelectric crystal, such as coercive field, internal field and electrical conductivity. We present poling kinetics of KNbO₃ crystals, which involve domain nucleation and growth, backswitching, relaxation of internal field. Optimum poling conditions were established by designing a proper wave shape of external field. We demonstrate an efficient second-harmonic generation using QPM in a periodically poled KNbO₃ crystal.

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비휘발성 메모리용 대체 강유전체 박막 (Ferroelectric Thin Film as a substitute for Non-volatile Memory)

  • 김창영;장승우;우동찬;남효덕;이희영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.509-512
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    • 1999
  • Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

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Technology Computer-Aided Design과 결합된 SPICE를 통한 금속-강유전체-반도체 전계효과 트랜지스터의 전기적 특성 해석 (Electrical analysis of Metal-Ferroelectric - Semiconductor Field - Effect Transistor with SPICE combined with Technology Computer-Aided Design)

  • 김용태;심선일
    • 마이크로전자및패키징학회지
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    • 제12권1호
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    • pp.59-63
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    • 2005
  • 금속-강유전체-반도체 전계효과 트랜지스터 (MFS/MFISFET)의 동작 특성을 technology computer-aided design (TCAD)과 simulation program with integrated circuit emphasis (SPICE)를 결합하여 전산모사하는 방법을 제시하였다. 복잡한 강유전체의 동작 특성을 수치해석을 이용하여 해석한 다음, 이를 이용하여 금속-강유전체-반도체 구조에서 반도체 표면에 인가되는 표면 전위를 계산하였다. 계산된 TCAD 변수인 표면 전위를 전계효과 트랜지스터의 SPICE 모델에서 구한 표면 전위와 같다고 보고게이트 전압에 따른 전류전압 특성을 구할 수 있었다. 이와 같은 방법은 향후 MFS/MFISFET를 이용한 메모리소자의 집적회로 설계에 매우 유용하게 적용될 수 있을 것이다.

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PZT 강유전체 박막의 마이크로파 유전특성 (Microwave Dielectric Properties of Ferroelectric PZT Thin Films)

  • 곽민환;문승언;류한철;김영태;이상석;이수재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.719-722
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    • 2003
  • Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

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