Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Random-Oriented (Bi,La)4Ti3O12 Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device

  • Lee, Youn-Ki (Department of Materials Science & Engineering/ReSEM, Chungju National University) ;
  • Ryu, Sung-Lim (Department of Materials Science & Engineering/ReSEM, Chungju National University) ;
  • Kweon, Soon-Yong (Department of Materials Science & Engineering/ReSEM, Chungju National University) ;
  • Yeom, Seung-Jin (R&D Division, Hynix Semiconductor Inc.) ;
  • Kang, Hee-Bok (R&D Division, Hynix Semiconductor Inc.)
  • Received : 2011.08.12
  • Accepted : 2011.11.17
  • Published : 2011.12.25
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Abstract

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

Keywords

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