Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Ferroelectric Thin Film as a substitute for Non-volatile Memory

비휘발성 메모리용 대체 강유전체 박막

  • 김창영 (영남대학교 재료금속공학부) ;
  • 장승우 (영남대학교 재료금속공학부) ;
  • 우동찬 (영남대학교 재료금속공학부) ;
  • 남효덕 (영남대학교 전기전자공학부) ;
  • 이희영 (영남대학교 재료금속공학부)
  • Published : 1999.05.01
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Abstract

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

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