• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.806-810
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• 2001

$La_{2/3}TiO_3$, $La_2Ti_2O_7$ are used in various parts by dielectric properties. The purpose of the present study is to understand the photoluminescence properties of $Al^{3+}\;and\;Pr^{3+}$ doped perovskite-type $La_{2/3}TiO_3$ and pyrochlore-type $La_2Ti_2O_7$ phosphor, which characterized by the red emission $(^1D_2{\rightarrow}^3H_4)\;of\;Pr^{3+}$ of $Pr^{3+}$ ion. The explanation for the energy transfer and the corresponding critical distance were proposed on the role of Al^3+ ions as energy transfer mediates in perovskite-type $La_{2/3}TiO_3$:Pr phosphor. In order to clarify the distinction of photoluminescence propoerties between the perovskite-type $La_{2/3}TiO_3$ and the pyrochlore $La_2Ti_2O_7$, the trap-involved process and the charge transfer band have been investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.122-125
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• 1995

Using metalorganic deposition technique, $La_2Ti_2O_{7}$ precursor solution was deposited on platinium coated SiO$_2$/SI(100) substrates by spin-coating process. Crystalline and crack-free films of ∼0.2$\mu\textrm{m}$ thickness were successfully fabricated on the above substrate from four different types of $La_2Ti_2O_{7}$ precursor solutions by proper heat treatment in the temperature range of $700^{\circ}C$∼$1200^{\circ}C$. Microstructure and X-ray diffraction analysis of $La_2Ti_2O_{7}$ thin film showed that the crystallization temperature and the preferred orientation of $La_2Ti_2O_{7}$ thin film were strongly dependent on the precursor used.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.567-572
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• 1998

The crystalline structure of $LaTi_{0.8}V_{0.2}O_3$ solid solutions, prepared by arc-melting palletized mixtures of predried $La_2O_3,\;V_2O_3,\;TiO_2$, and Ti, was investigated by transmission electron microscopy and computer image simulation. Computer image simulations were performed by the multislice method for a wide range of sample thickness and defocusing value. The structure of $LaTi_{0.8}V_{0.2}O_3$ was determined as a $GdFeO_3$-type orthorhombic $(a\approx5.58{\AA},\;b\approx7.89{\AA},\;and\;c\approx5.58{\AA})$ with a space group $P_{nma-}$. No evidence of ordering of Ti and V atoms in $SaTi_{0.8}V_{0.2}O_3$ was found.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.368-372
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• 1997

The microwave dielectric properties of (1-x)La2/3TiO3-xLaAlO3 system in which LaAlO3 having $\varepsilon$r$\geq$90 and positive $\tau$f was investigated. The crystal system of (1-x)La2/3TiO3-xLaAlO3 was pseudo-cubic in the range of 0.1$\leq$x$\leq$0.07. Its lattice constant increased with increasing x in spite that the amount of LaAlO3 containing of smaller Al(0.57 $\AA$) ion than Ti(0.64 $\AA$) increased. As the amount of LaAlO3 increased from x=0.1 to 0.9, the relative dielectric constant ($\varepsilon$r) decreased from 50 to 23 and the temperature coefficient of resonant frequency($\tau$f) decreased from +84 to -50. On the other hand, the value of Q.f0 reached a maximum (148,000 at 7 GHz) at x=0.7, where a rapid increase in the peak intensity of XRD occured, and further increased after prolonged sintering. The microwave dielectric properties of $\varepsilon$r=37, Q.f0=47,000 (at 7 GHz), and $\tau$f=-2 ppm/$^{\circ}C$ were obtained near 0.6La2/3TiO3-0.4LaAlO3 (x=0.4) composition.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.85-92
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• 1994

Ferroelectric Bi4Ti3012 thin films have been grown on LaAlO(001) by Pulsed-laser deposition. Phase formation and structural films prepared of the films prepared at varigus deposition temperatures are investigated using x-ray diffraction The film grown at 740℃ shows epitaxial growth behavior with c-akis normal to the substrate. N2tBmstiucCures of Bi4Ti3012/YBa2Cu307-x/LaAIO3(001) have been in-situ grown. Even though the a-and b-axes of the Yba2Cu307-x layer show epitaxial growth behavior.

• Electrical & Electronic Materials
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• v.1 no.2
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• pp.162-167
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• 1988

본 논문에서는 Pb(Sn$_{1}$7/Mn$_{2}$7/Nb$_{4}$7/)O$_{3}$- Pb(Zr, Ti)O$_{3}$계에 La$_{2}$O$_{3}$를 첨가하여 그양에 따른 압전일 전기력 성질의 변화를 고찰하였다. La$_{2}$O$_{3}$ 첨가량의 증가에 따라 유전상수, 압전 d상수, 유전손실, 비저항 등은 증가하였으나 경시 변화량은 오히려 감소하였다.

• Korean Journal of Materials Research
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• v.7 no.4
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• pp.354-360
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• 1997

페르브스카이트 구조를 갖는 CaTiO$_{3}$-La(Zn$_{1}$2/Ti$_{1}$2)O$_{3}$계에서 소결 온도와 소결 시간의 증가에 따른 ZnO의 휘발과 이에 따른 고주파 유전 특성에 대하여 조사하였다. 시편 내부를 WDS 분석한 결과 위치에 따른 ZnO의 농도차를 관찰할 수 있었고, 시편의 두께를 달리하여 Qxf$_{o}$ 값을 조사한 결과 ZnO가 많이 휘발된 가장자리에서 더 높은 Qxf$_{o}$ 값을 얻을 수 있었다. 0.535CaTiO$_{3}$-0. 465La(Zn$_{1}$2/Ti$_{1}$2/)O$_{3}$몰비로 155$0^{\circ}C$, 2시간동안 합성한 결과 소결 밀도 5.31g/㎤, 유전율 50, Qxf$_{0}$34,000, 온도계수 +8ppm/$^{\circ}C$의 고주파 유전 특성을 갖는 소결체를 얻을 수 있었다.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.871-871
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• 1997

(1-x)CaTiO/sub 3/-xLa(Zn/sub 1/2/Ti/sub 1/2/)O/sub 3/의 마이크로 유전특성을 조사하였다. x가 증가함에 따라 비유전율과 공진주파수의 온도계수는 감소하였으며, Qㆍf/sub 0/는 증가하였다. 그 결과 x=0.5인 (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/)O/sub 3/의 조성에서 ε/sub r/=51, Qㆍf/sub 0/=38,000 (at 7 GHz), τ/sub f/=+5ppm/℃의 유전특성이 나타났다. (Ca/sub 0.5/La/sub 0.5/)(Ti/sub 0.75/Zn/sub 0.25/) O/sub 3/조성의 소결온도를 저하시키기 위하여 Bi/sub 2/O/sub 3/를 주조성으로한 소결체를 첨가하여 소결 및 유전특성을 조사하였다. 1wt% 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 150℃ 낮아졌으며, 비유전율 (ε/sub r/), 공진주파수의 온도계수(τ/sub f), Qㆍf/sub 0/가 각각 50+5ppm/℃, 35,000인 마이크로파 유전특성이 얻어졌다. 또한 3wt%의 0.76Bi/sub 2/O/sub 3/-0.24NiO가 첨가된 경우 소결온도는 200℃ 저하되었고, 비유전율 (ε/sub r/)과 공진주파수의 온도계수 (τ/sub f)는 변하기 않았으나, Qㆍf/sub 0/값이 38,000에서 25,000으로 저하되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.463-466
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• 2001

In recent year, Ferroelectric $BLT(Bi_{4-x}La_{x}Ti_{3}O_{12})$ is a promising candidate materials. This study was practiced to make good conditions of BL T targets. In this study, calcination and sintering temperature were kept at $750^{\circ}C$, $1100^{\circ}C$ for 2 hour respectively. the density obtained 7.612, 7.98, $7.877g/cm^{3}$ as $La_{2}O_{3}$ contents were 0.0mol%, 0.25mol%, 0.5mol%. Especially, the lanthanum content of 0.5 mol% measured C-axis (117) preferred orientation more than the others targets in the XRD. In $\varepsilon_{r}-f$ relationship using by HP 4194 A impedance analyzer, the 0.5 mol% observed above 200 relative dielectric constant. but the dissipation factor was higher than others targets at 100Hz~13MHz range. SEM photograph with the content of $La_{2}O_{3}$ was observed like rod and plate types.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.463-466
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• 2001

In recent year, Ferroelectric BLT($Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$) is a promising candidate materials. This study was Practiced to make good conditions of BLT targets. In this study, calcination and sintering temperature were kept at 75$0^{\circ}C$, 110$0^{\circ}C$ for 2 hour respectively. the density obtained 7.612, 7.98, 7.877 g/㎤ as La$_2$O$_3$ contents were 0.0mol%, 0.25mo1%, 0.5mol%. Especially, the lanthanum content of 0.5 mol% measured C-axis (117) preferred orientation more than the others targets in the XRD. In $\varepsilon$$_{r}$-f relationship using by HP 4194 A impedance analyzer, the 0.5 mol% observed above 200 relative dielectric constant. but the dissipation factor was higher than others targets at 100Hz~13MHz range. SEM photograph with the content of La$_2$O$_3$ was observed like rod and plate types.types.s.