• 한국전자통신학회논문지
• /
• 제11권1호
• /
• pp.59-64
• /
• 2016

본 논문에서는 주택의 전기화재 방지를 위해 아크고장전류로부터 아크 진단 기능을 가지는 지능형 분전반이 개발된다. 지능형 분전반의 주 제어장치는 단상전력관리를 지원하는 단상 전력관리 장치와 아크전류로부터 아크 고장을 진단하기 위한 아크 진단 장치로 구성된다. 본 논문에서는 단상 전력관리 장치와 아크진단장치의 시작품이 설계, 제작되며, 전기화재의 원인을 분전반으로부터 원격 서버 시스템에 전송하기 위해서 주제어장치와 아크 고장 진단 장치와의 연동기능이 개발된다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제4권3호
• /
• pp.228-239
• /
• 2004

In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

• 조명전기설비학회논문지
• /
• 제25권9호
• /
• pp.75-79
• /
• 2011

The MOV(Metal Oxide Varistor), a voltage limiting element, has been installed in the SPD(Surge Protective Device) or inside the internal circuit of an electronic appliance for protection of the electric power system and electronic device against electrical surge. Such an MOV is exposed, however, to the risk of the thermal runaway resulting from excessive voltage and deterioration. In this paper, a reciprocal action has been tested and analyzed using a phosphorus bronze switching module and the low-temperature solder. And a short current break characteristic test linked with the circuit breaker has been performed to limit the inrush current when the MOV breaks down. It has been proven that the phosphorus bronze switching module installed inside the internal circuit can improve the safety of the power line system and the electronic device.

• 한국전기전자재료학회논문지
• /
• 제23권10호
• /
• pp.763-766
• /
• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제9권8호
• /
• pp.3090-3102
• /
• 2015

The accuracy of an augmented reality (AR) application is highly dependent on the resolution of the object's image and the device's computational processing capability. Naturally, a mobile smart device equipped with a high-resolution camera becomes the best platform for portable AR services. AR applications require significant energy consumption and very fast response time, which are big burdens to the smart device. However, there are very few ways to overcome these burdens. Computation offloading via mobile cloud computing has the potential to provide energy savings and enhance the performance of applications executed on smart devices. Therefore, in this paper, adaptive mobile computation offloading of mobile AR applications is considered in order to determine optimal offloading points that satisfy the required quality of experience (QoE) while consuming minimum energy of the smart device. AR feature extraction based on SURF algorithm is partitioned into sub-stages in order to determine the optimal AR cloud computational offloading point based on conditions of the smart device, wireless and wired networks, and AR service cloud servers. Tradeoffs in energy savings and processing time are explored also taking network congestion and server load conditions into account.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제4권2호
• /
• pp.94-99
• /
• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• 한국군사과학기술학회지
• /
• 제21권6호
• /
• pp.857-864
• /
• 2018

This paper describes about the circuit design and test of the electronic Arm Fire Device. Electronic arm fire device consists of igniter, circuit and housing case and it operates without the actuator such as torque motor or solenoid. A high-voltage DC-DC converter was used to generate the voltage for initiating the LEEFI(Low Energy Exploding Foil Initiator). The MEMS switch was used to detect the acceleration that occurs when missile is launched, and the circuit was designed considering the size, performance, and specification of the electronic devices. The performance test was conducted to verify the designed circuit and we confirmed that it operates well.

• 한국전기전자재료학회논문지
• /
• 제27권12호
• /
• pp.792-796
• /
• 2014

In this paper, we investigated the hot carrier reliability of two kinds of device with low threshold voltage (LVT) and regular threshold voltage (RVT) in 65 nm CMOS technology. Contrary to the previous report that devices beyond $0.18{\mu}m$ CMOS technology is dominated by channel hot carrier(CHC) stress rather than drain avalanche hot carrier(DAHC) stress, both of LVT and RVT devices showed that their degradation is dominated by DAHC stress. It is also shown that in case of LVT devices, contribution of interface trap generation to the device degradation is greater under DAHC stress than CHC stress, while there is little difference for RVT devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.73-76
• /
• 1998

We give pressure stimulation into organic thin films and detect the induced displacement current. then manufacture a device under the accumulation condition that the state surface pressure is 15[mN/m]. In processing of a device manufacture. We can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(polyimide)/Au, the number of accumulated layers are 31,35, and 41. I-V characteristic of the device is measured from 0[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results, and the insulation of a thin film is better as the interval between electrodes is larger.

• 대한전자공학회논문지TC
• /
• 제48권1호
• /
• pp.55-61
• /
• 2011

본 논문에서는 device-to-device (D2D) 시스템이 M 개의 셀룰러 단말기들과 상향 링크의 주파수 자원을 공유할 때 셀룰러 단말기들에 의한 간섭과 D2D 통신 단말기 쌍의 신호의 파워 비에 따른 outage 확률을 분석한다. 이 때, D2D 통신 전송기의 최대 전송 파워는 셀룰러 네트워크에 어떠한 해로운 간섭도 발생하지 않게 하기 위해서 엄격하게 제한된다. 수학적 모델에 의해 D2D 통신 수신기의 outage 확률은 셀룰러 사용자 단말기들에 의해 발생하는 간섭 대 선호 비 및 셀룰러 사용자 단말기의 개수, M에 의한 함수로 표현된다. 또한, 셀룰러 사용자 단말기들에 의해 발생하는 간섭 대 신호 비는 D2D 통신 단말기 쌍, 셀룰러 사용자 단말기들, 및 기지국과의 거리의 함수로 표현된다. 얻어진 outage 확률을 이용해서, D2D 통신 시스템의 신뢰성을 쉽게 평가할 수 있다. 또한, 분석의 타당성을 입증하기 위해 모의실험들을 제공한다.