• Polymer(Korea)
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• v.25 no.2
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• pp.302-310
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• 2001

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless Cu plated layer and polyester (PET) film, the effect of pretreatment conditions such as etching method and mixed catalyst composition, and accelerator was investigated. Compared to NaOH etching medium, PET film was more finely etched by HCl solution, resulting in an improvement in adhesion between Cu layer and PET film. However, there were no significant differences in electromagnetic interference shielding effectiveness as a function of etching medium. The surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$ : SnCl$_2$ from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, the adhesion and the shielding effectiveness of Cu plated PET film were increased. Furthermore, HCl was turned out to be a better accelerator than NaOH in order to enhance the activity of the mixed PdCl$_2$/SnCl$_2$ catalyst, which facilitated the formation of more uniform copper deposit on the PET film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1091-1098
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• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.17-21
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• 2008

The electroless plating of copper and tin were investigated for the fabrication of Sn-Cu bump. Copper and tin were electroless plated in series on $20{\mu}m$ diameter copper via to form approximately $10{\mu}m$ height bump. In electroless copper plating, acid cleaning and stabilizer addition promoted the selectivity of bath on the copper via. In electroless tin plating, the coating thickness of tin was less uniform relative to that of electroless copper, however the size of Sn-Cu bump were uniform after reflow process.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.100-103
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• 2001

In this study, the adhesion and thermal property of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu/TaN/Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature far the multilayered Cu/TaN/Si specimen which was annealed at Ar gas. The adhesion property of Cu 171ms was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than those of sputtered Cu film and evaporated Cu film.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.117-117
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.34-34
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• 1998

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.149-157
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• 2015

We investigated the effects of the fabric structure or the kinds of plated metals on the electromagnetic interference shielding effectiveness (EMI SE) by means of electroless plating on polyester fabric. We found that the weight of deposited metal, EMI SE, and flexibility of the conductive fabric for EMI shield is affected by morphology of fabric and structure of fiber. The EMI SE of conductive fabric plated Ni/Cu/Ni by electroless plating method on draw textured yarn (DTY) polyester was in the practically useful range of above 70 dB over a wide frequency range of 10 MHz to 1.0 GHz at the surface resistivity of $0.05{\Omega}/{\square}$. Au or Ag plated conductive fabric by immersion plating method is not able to provide for a good EMI SE.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.215-221
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• 2017

The electroless plating process largely consists of substrate cleaning, seed formation (activator formation), and electroless plating. The most widely used activator in the seed formation step is Pd, and Sn ions are used to facilitate the formation of this Pd seed layer. This is problematic because the Sn ions interfere with the reduction of Cu ions during electroless plating; thus, the Sn ions must be removed by a hydrochloric acid cleaning process. This method is also expensive due to the use of Pd. In this study, Cu electroless plating was performed by forming a seed layer using a silver nanosol instead of Pd and Sn. The effects of the Ag nanosol concentration in the pretreatment solution and the pretreatment time on the thickness and surface morphology of the Cu layer were investigated. The degrees of adhesion to the substrate were similar for the electroless-plated Cu layers formed by conventional Pd activation and those formed by the Ag nanosol.