Thermal Stability of the Interface between TaN Deposited by MOCVD and Electroless-plated Cu Film

MOCVD 방법으로 증착된 TaN와 무전해도금된 Cu박막 계면의 열적 안정성 연구

  • 이은주 (서울시립대학교 재료공학과) ;
  • 황응림 (한양대학교 재료공학과) ;
  • 오재응 (한양대학교 전자공학과) ;
  • 김정식 (서울시립대학교 재료공학과)
  • Published : 1998.12.01

Abstract

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

Keywords

References

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