• 제목/요약/키워드: electrical length

검색결과 2,448건 처리시간 0.032초

Dependence of Ozone Generation in a Micro Dielectric Barrier Discharge on Dielectric Material and Micro Gap Length

  • Sakoda, Tatsuya;Sung, Youl-Moon
    • KIEE International Transactions on Electrophysics and Applications
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    • 제4C권5호
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    • pp.201-206
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    • 2004
  • In order to investigate the optimum conditions for the effective ozone formation in a dielectric barrier discharge, measurements of ozone concentration were carried out for various conditions such as the gap length, the dielectric material and the operating gas. It was found that the optimum discharge conditions differed exceedingly in the types of operating gases and dielectric materials. In dry air, dielectric material with low dielectric constant and thermal conductivity, which might contribute to the restriction of the gas temperature rise in the discharge region, proved effective in obtaining both high ozone yield and concentration. The optimum gap length was considered to be in the range of 600-800 mm. In oxygen, using a quartz glass disk as a dielectric material, the required condition to obtain the high ozone yield and concentration was expanded.

적층형 고온초전도 전류도입선의 열 특성 해석 (Heat Characteristic Analysis of Stacking Type HTS Current Lead)

  • 두호익;임성우;홍세은;윤기웅;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.628-631
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    • 2001
  • Current lead is one of the first proposed devices for the application of High Temperature-Superconductor(HTSC). The current lead provides high current for electrical machine using superconductor from room temperature. Its characteristics that is zero resistance and low heat transfer rate under critical temperature lead to research for the replacement of existing current lead with HTSC. In this paper, we investigated the temperature distributions of stacking type and rod type current lead with each cross-section area and length using Nastran program and compared each temperature distribution. It is obtained from this paper that stacking type current lead has flat temperature gradient and than rod type one and more stable operation as current lead is closely related with its cross-section area and length.

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Nonbinary Multiple Rate QC-LDPC Codes with Fixed Information or Block Bit Length

  • Liu, Lei;Zhou, Wuyang;Zhou, Shengli
    • Journal of Communications and Networks
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    • 제14권4호
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    • pp.429-433
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    • 2012
  • In this paper, we consider nonbinary quasi-cyclic low-density parity-check (QC-LDPC) codes and propose a method to design multiple rate codes with either fixed information bit length or block bit length, tailored to different scenarios in wireless applications. We show that the proposed codes achieve good performance over a broad range of code rates.

짧은 채널 길이의 다결정 실리콘 박막 트랜지스터의 전기적 스트레스에 대한 연구 (A study of electrical stress on short channel poly-Si thin film transistors)

  • 최권영;김용상;한민구
    • 전자공학회논문지A
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    • 제32A권8호
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    • pp.126-132
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    • 1995
  • The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

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낮은 누설전류를 위한 소스/드레인-게이트 비중첩 Nano-CMOS구조 전산모사 (Simulation of nonoverlapped source/drain-to-gate Nano-CMOS for low leakage current)

  • 송승현;이강승;정윤하
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.579-580
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    • 2006
  • Simple nonoverlapped source/drain-to-gate MOSFETs to suppress GIDL (gate-induced drain leakage) is simulated with SILVACO simulation tool. Changing spacer thickness for adjusting length of Drain to Gate nonoverlapped region, this simulation observes on/off characteristic of nonoverlapped source/drain-to-gate MOSFETs. Off current is dramatically decreased with S/D to gate nonoverlapped length increasing. The result shows that maximum on/off current ratio is achieved by adjusting nonoverlapped length.

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선대 선 전극방식의 대기압 아크억제 대책 및 Metaloxide 제거에 관한 연구 (The Study on Arc Suppression of Line-to-Line Electrodes in Air and Removal of the Metaloxide)

  • 정종한;김문환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권5호
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    • pp.264-267
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    • 2004
  • Recently the pulsed power systems have been widely used in many fields such as E/P(Electrostatic Precipitator), DeNOx/DeSOx power systems, ozone generators and power sources of the laser beam. In this paper, we studied various electrical characteristics for arc suppression of line-to-line electrodes in air and removal of the metaloxide using our pulsed power system. To obtain high efficiency of the pulsed power system, we repeatedly experimented and tested their characteristics. by adjusting electrode length of the load. As a result, when the value of the electrode length and pulse repetition rate were changed at the load, the value of the arc voltage changed at the electrode load. In conclusion, we controlled arc voltage of the load by ,changing electrode length and pulse repetition rate. Also. we stydied removal area of the metaloxide using area discharge according to pulse repetition rate.

Security Properties of Domain Extenders for Cryptographic Hash Functions

  • Andreeva, Elena;Mennink, Bart;Preneel, Bart
    • Journal of Information Processing Systems
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    • 제6권4호
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    • pp.453-480
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    • 2010
  • Cryptographic hash functions reduce inputs of arbitrary or very large length to a short string of fixed length. All hash function designs start from a compression function with fixed length inputs. The compression function itself is designed from scratch, or derived from a block cipher or a permutation. The most common procedure to extend the domain of a compression function in order to obtain a hash function is a simple linear iteration; however, some variants use multiple iterations or a tree structure that allows for parallelism. This paper presents a survey of 17 extenders in the literature. It considers the natural question whether these preserve the security properties of the compression function, and more in particular collision resistance, second preimage resistance, preimage resistance and the pseudo-random oracle property.

우사(牛舍)에서 전기배선의 종류와 길이에 따른 저항성 및 용량성 누전전류 분석 (Analysis of Resistive and Capacitive Leakage Current according to Wiring Type and Length at Cattle Barn)

  • 유상옥;김두현;김성철
    • 한국안전학회지
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    • 제29권6호
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    • pp.34-39
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    • 2014
  • This paper is aimed to prevent danger of electrical fire at cattle barn to detect resistive and capacitive leakage current component for wiring type and length. In order to analysis for electric leakage component for cattle barn sizes and normal buildings, this paper was studied field state investigation which are at cattle barn companies(10 companies) in Cheong-won location and normal buildings at Nam-bu market in Jeon-ju location. Market to deduce the problems of electric leakage component is analyzed. The resistive and capacitive leakage current component for wiring type and length is analyzed at Beon-young cattle barn. Results show that electric leakage component suggested in this paper are valuable and usable to electrical fire in leakage current based on environment factor, which will prevent severe damage to human beings and properties and reduce the electrical fires in cattle barn. It is acceptable for electrical equipment use in an cattle barn.

40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free $SiO_2/SiN_x$ Side-wall Gate Process

  • Kim, Dae-Hyun;Kim, Suk-Jin;Kim, Young-Ho;Kim, Sung-Wong;Seo, Kwang-Seok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권1호
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    • pp.27-32
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    • 2003
  • Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

압전 세라믹 바이모프의 전기기계적 특성 (Electro-mechanical Properties of Piezoelectric Ceramic Bimorphs)

  • 이용국;이해룡;김강교;한득영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1416-1418
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    • 1994
  • Expressions for the displacement of a bimorph, one end fixed and the other free, has been introduced when sinusoidal inputs were applied to the ceramic plates on a thin metal plate. Maximum displacements at the free end and strains at the position of strain gage attached were measured when various wave forms, voltages, and frequencies were applied to the bimorph whose length is 6.6[cm], width 2.5[cm], and thickness 0.0365[cm]. Under the constant voltage ( $70[V_{peak}]$ ), the strains and the displacements at the free end were larger than the case of the sinusoidal input when the square wave was applied and were smaller when triangular wave. It was shown that the displacements at the free end and the strains of the gage position were increased as the applied voltage in the range of $30-90[V_{peak}]$ and effective length were increased. And it was also found that the resonant frequency of a bimorph was decreased as its effective length was increased, and that the displacements and the strains were maximum at the resonant frequency.

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