• Journal of Institute of Control, Robotics and Systems
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• v.22 no.4
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• pp.247-252
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• 2016

In this paper, we propose a new defect detection technology for micro-defect on the surface of steel products. Due to depth and size of microscopic defect, slop of surface and vibration of strip, the conventional optical method cannot guarantee the detection performance. To solve the above-mentioned problems and increase signal to noise ratio, a novel retro-schlieren method that consists of retro reflector and knife edge is proposed. Moreover dual switching lighting method is also applied to distinguish uneven micro defects and surface noise. In proposed method, defective regions are represented by a black and white pattern. This pattern is detected by a defect detection algorithm with Gabor filter. Experimental results by simulator for sample defects of cold rolled steel show that the proposed method is effective.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.404-404
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• 2010

Despite much works have been done on the geometric structures of ripples, defects and edge atoms in a graphene device, there has been no report showing the direct correlation between the structures and the transport property. Unlike scanning tunneling microscopy or other electron microscopes, Scanning Gate Microscope (SGM) is a unique microscopic tool with which the local electronic structure and the transport property of a device can be measured simultaneously. We have performed a transport measurement in nanometer scale using a scanning gate microscope (SGM). We have found the nanoscopic pictures of electron and hole puddles and the role of graphene- device edges in the transport measurements. These experimental findings were successfully explained with a theoretical model.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.3
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• pp.555-564
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• 1994

This study has been made to investigate the stress distribution around defects and inclusions that behave as stress concentrators. The stress distribution and interation effects around defects and inclusions was analyzed using Finite Element Method. The results are as follows;(1) Maximum stress point in case of $E_I/E_M>1$($E_I$:elasticity modulus forthe inclusion, $E_M$/:elasticity modulus for the base material)is the vertical point with respect to force direction and in case of $E_I/E_M<1$ it is the parallel point along the hole edge. (2) Interaction effects of ${\sigma}_y$ for the inclusion side is larger than the defect side when the interval between inclusion and defect is near. (3) stress interation effects is large if the difference of ${\sigma}_y$ is small and it is small if the difference of ${\sigma}_y$ is large for the case that the interval between inclusion and defect whose size and property are different is near.

• Transactions of Materials Processing
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• v.25 no.1
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• pp.29-35
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• 2016

In the current study, finite element analysis was conducted for the press hemming of automotive panels in order to predict various hemming defects such as roll-in and turn down. The analysis used the exact punch movement based on the cam location and considered the sealer between the inner and outer panels with an artificial contact thickness. The analysis results quantify the hemming defects especially at the flange edge in the matching region of the head lamp. A design of experiments along with the parameter study was used to obtain the optimum process parameters for minimizing hemming defects. The optimization process selects the intake angle, bending angle of the hemming punch, and the flange height of the outer panel. The optimum design process determines an appropriate tool angle and flange height to reduce the roll-in and turn-down as compared to the initial design.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.

• Journal of KIISE:Software and Applications
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• v.34 no.5
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• pp.447-454
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• 2007

TFT-LCD(Thin Film transistor liquid crystal display) has become actively used front panel display technology with increasing market. Intrinsically there is region of non uniformity with low contrast that to human eye is perceived as defect. As the gray level difference between the defect and the background is hardly distinguishable, conventional thresholding and edge detection techniques cannot be applied to detect the defect. Between the patterned and un-patterned LCD defects, this paper deals with un-patterned LCD defects by using independent component analysis, adaptive thresholding and skewness. Our method showed strong results even on noised LCD images and worked successfully on the manufacturing line.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• Transactions of the Korean Society of Automotive Engineers
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• v.17 no.3
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• pp.15-21
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• 2009

The anisotropic mechanical properties were measured for the three orthogonal orientations of plain weave glass fabric reinforced epoxy resin laminate. In tensile and flexural tests, axial and edge type specimens failed by pull-out of warp and fill yarns, respectively. In contrast, the thickness type specimens failed by adhesive failure process. Longitudinal cracking occurred in several of the edge type specimens during tensile test. That cracking caused pop-in in the stress-strain curve. Defects induced by improper coupon machining caused that cracking.