Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of AIN Buffers by R. F. Sputter on Defects of GaN Thin films

R. F. Sputter법으로 성장된 AIN 완충층이 GaN 박막결함에 미치는 영향

  • 이민수 (국립상주대학교 신소재공학과)
  • Published : 2004.05.01
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Abstract

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

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References

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