Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.11a
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- Pages.185-188
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- 2001
Effects of Consumable on STI-CMP Process
STI-CMP 공정에서 Consumable의 영향
Abstract
Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified
Keywords
- CMP(Chemical mechanical polishing);
- HSB(high spray bar);
- $PN_2$(Purified $N_2$);
- hot spot POU fillter;
- DIW(deionized water)