• Journal of Microbiology and Biotechnology
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• v.22 no.2
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• pp.176-183
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• 2012

Eukaryotic translation termination is governed by eRF1 and eRF3. eRF1 recognizes the stop codons and then hydrolyzes peptidyl-tRNA. eRF3, which facilitates the termination process, belongs to the GTPase superfamily. In this study, the effect of the MC domain of eRF1a (eRF1aMC) on the GTPase activity of eRF3 was analyzed using fluorescence spectra and high-performance liquid chromatography. The results indicated eRF1aMC promotes the GTPase activity of eRF3, which is similar to the role of eRF1a. Furthermore, the increased affinity of eRF3 for GTP induced by eRF1aMC was dependent on the concentration of $Mg^{2+}$. Changes in the secondary structure of eRF3C after binding GTP/GDP were detected by CD spectroscopy. The results revealed changes of conformation during formation of the eRF3C GTP complex that were detected in the presence of eRF1a or eRF1aMC. The conformations of the eRF3C eRF1a GTP and eRF3C eRF1aMC GTP complexes were further altered upon the addition of $Mg^{2+}$. By contrast, there was no change in the conformation of GTP bound to free eRF3C or the eRF3C eRF1aN complex. These results suggest that alterations in the conformation of GTP bound to eRF3 is dependent on eRF1a and $Mg^{2+}$, whereas the MC domain of eRF1a is responsible for the change in the conformation of GTP bound to eRF3 in Euplotes octocarinatus.

• Journal of Microbiology and Biotechnology
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• v.20 no.9
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• pp.1283-1287
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• 2010

In eukaryotes, eRF3 participates in translation termination and belongs to the superfamily of GTPases. In this work, the dissociation constants for nucleosides bound to Euplotes octocarinatus eRF3 in the presence and absence of eRF1a were determined using fluorescence spectra methods. Furthermore, a GTP hydrolyzing assay of eRF3 was carried out using an HPLC method, and the kinetic parameters for GTP hydrolysis by eRF3 were determined. Consistent with data from humans, the results showed that eRF1a promoted the binding of GTP to eRF3 and the GTP hydrolyzing activity of eRF3. However, in contrast to the lack of GTP binding in the absence of eRF1 in human eRF3, the E. octocarinatus eRF3 was able to bind GTP by itself. The nucleotide binding affinity of the E. octocarinatus eRF3 also differed from the human data. A structure model and amino acid sequence alignment of potential G domains indicated that these differences may be due to valine 317 and glutamate 452 displacing the conserved glycine and lysine involved in GTP binding.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.271-281
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• 1992

Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

• Journal of Advanced Navigation Technology
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• v.13 no.3
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• pp.319-326
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• 2009

In this paper, the key technologies of Navigation receiver for GNSS sensor station are presented as a development result of a GNSS ground station in ETRI. A wide-band antenna and RF/IF components and SW signal processing unit to cover the GPS and Galileo signals for GNSS receiver are developed and its performance is verified by using GPS live signal and GNSS RF signal simulator from SpirentTM. We also gather GIOVE-A signal by using H/W antenna and RF/IF units in IF-level as sampling frequency and bit number, 112MHz and 8bits, respectively by using the developed wide-band antenna and RF/IF components. Data acquisition is done by using commercial data acquisition device from National Instrument TM. The gathered data is fed into SW receiver to process Galileo E1 to verify Galileo signal processing by Galileo live signal from GIOVE-A.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.8
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• pp.767-773
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• 2008

Galileo is a new civil Global Navigation Satellite System(GNSS) developed by Europe. GIOVE-A, a satellite to test Galileo system performance, transmits navigation signal on orbit. Evaluation of Galileo system and development of Galileo receiver needs to analyze GIOVE-A signals. In this paper, we received GIOVE-A signals and processed it using GIOVE-A Interface Control Document(ICD). Signal acquisition, tracking and navigation message decoding made grasping current signal status possible. Bandwidth increase by BOC modulation is one of the difference from GPS. Therefore, we investigated feasibility of conventional GPS L1 RF front-end to receive GIOVE-A E1 signal by evaluation of receiving performance of navigation signal on each bandpass filter of RF front-end.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.85-85
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• 2011

RF magnetron co-sputtering을 이용하여 RF power 및 공정 압력에 따라 GZO 및 IGZO 박막을 유리기판 위에 제작하고 투명전극으로 구조적, 광학적, 전기적 특성을 조사하였다. 박막 증착 조건의 초기 압력은 $1.0{\times}10^{-6}Torr$, 증착온도는 상온으로 고정하였으며 기판은 Corning 1737 유리기판을 사용하였다. 소결된 타겟으로 ZnO, $In_2O_3$ 및 $Ga_2O_3$을 이용하였으며, 각각의 타겟은 독립 된 RF파워를 변화시키며 투명전극의 성분비를 조절하였으며, 증착 압력은 10 m에서 100 mTorr까지, 기판과의 거리는 25 mm에서 65 mm까지 변화시키며 박막을 제작하였다. 유리기판 위에 불순물이 첨가된 모든 ZnO 박막에서 (002) 면의 우선배향성이 관찰되었고, 3.4eV에서 3.5eV 정도의 광학적 밴드갭을 가지며 80% 이상의 투과율을 나타내었다. GZO 박막의 경우 증착 조건에 따라 투명전극에 요구되는 $5*10^{-3}{\Omega}-cm$ 이하의 전기적특성을 가짐을 보였으며, gallium 성분이 0%에서 6%로 증가함에 따라 3.3eV에서 3.5eV로 blue-shift하였으며, 비저항은 0.02에서 $0.005{\Omega}cm$로 낮아졌으며 이동도는 $4.7cm^2V^{-1}s^{-1}$에서 $2.7cm^2V^{-1}s^{-1}$로 보이며 GZO 물질이 투명전극으로서 기존의 ITO 물질 대체 가능성을 확인하였다. IGZO 박막은 In과 Ga의 함량에 따라 저항률의 변화가 크게 나타났으며, In의 함량이 많을수록 이동도, 캐리어 농도의 증가로 저항률은 감소하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.1
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• pp.20-23
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• 2004

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56 [MHz] was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar I line, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 [mTorr], 10∼300 [W], respectively. From emission intensity and lumnance intensity results, the mode transition from E-mode to H-mode was observed. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.1
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• pp.83-88
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• 2007

The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.406-408
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• 1999

Amorphous carbon nitride thin films were prepared on pretreated silicon(100) substrate in sputtering graphite target by activated gas phase using RF reactively sputtering. We measured the FT-IR spectrum to identify C=N(nitrile)stretching mode(2200cm$\^$-1/), C-H stretching mode(2800cm$\^$-1/), C-H bending mode, C=C stretching mode C=N(imino) mode(1680cm$\^$-1/ ), and the XPS to investigate chemical structure of surface. By the results of FT-H and XPS spectrum, We confirmed that amorphous carbon nitride films with typel (C(1s): 285.9[eV], N(1s): 398.5[ev]) and type 2(C1s): 287.5[eV, N(1s): 400.2[eV]) successfully were synthesized by RF reactively sputtering

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.287-290
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• 2006

A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using $0.25{\mu}m$ standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics.