Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 25 Issue 5
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- Pages.271-281
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- 1992
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
Effects of Deposition Parameters on the Bonding Structure and Optical Properties of rf Sputtered a-Si$_{1-x}$ C$_{x}$ : H films
RF 스퍼터링으로 증착된 a-Si$_{1-x}$ C$_{x}$ : H 박막의 결합구조와 광학적 성질에 미치는 증착변수의 영향
Abstract
Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/
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