• Title/Summary/Keyword: eFlash

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Design of an Embedded Flash IP for USB Type-C Applications (USB Type-C 응용을 위한 Embedded Flash IP 설계)

  • Kim, Young-Hee;Lee, Da-Sol;Jin, Hongzhou;Lee, Do-Gyu;Ha, Pan-Bong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.12 no.3
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    • pp.312-320
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    • 2019
  • In this paper, we design a 512Kb eFlash IP using 110nm eFlash cells. We proposed eFlash core circuit such as row driver circuit (CG/SL driver circuit), write BL driver circuit (write BL switch circuit and PBL switch select circuit), read BL switch circuit, and read BL S/A circuit which satisfy eFlash cell program, erase and read operation. In addition, instead of using a cross-coupled NMOS transistor as a conventional unit charge pump circuit, we propose a circuit boosting the gate of the 12V NMOS precharging transistor whose body is GND, so that the precharging node of the VPP unit charge pump is normally precharged to the voltage of VIN and thus the pumping current is increased in the VPP (boosted voltage) voltage generator circuit supplying the VPP voltage of 9.5V in the program mode and that of 11.5V in the erase mode. A 12V native NMOS pumping capacitor with a bigger pumping current and a smaller layout area than a PMOS pumping capacitor was used as the pumping capacitor. On the other hand, the layout area of the 512Kb eFlash memory IP designed based on the 110nm eFlash process is $933.22{\mu}m{\times}925{\mu}m(=0.8632mm^2)$.

A Study about Vaso-aging Degree by SA2000E as a Predictive Factors of Hot Flash Treatment (안면홍조의 치료 효과 예후 인자로서의 SA2000E로 측정된 혈관노화진행도에 관한 연구)

  • Kim, Dong-Il;Yoon, Sang-Ho;Ahn, Hong-Yeop
    • The Journal of Korean Obstetrics and Gynecology
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    • v.21 no.1
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    • pp.168-178
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    • 2008
  • Purpose: To verify the relationship of SA2000E results and acupuncture treatment efficacy on postmenopausal women. Methods: Longitudinal analyze relationship of the SA2000E results and hot flush VAS score changes of a clinical trial participants in 2006. Results: Someone who has high Vaso-aging degree by SA2000E represented better hot flash VAS decreasing efficacy. And the diminution rate of hot flash VAS, after 1week from the 1st treatment day was 0.311(p=0.0001), and finally 0.672(p = 0.0396). There are no statistical differences between study group and control group. Conclusion: Clinical trial participant who has better Vaso-physiological function present more hot flash reduce efficacy by acupuncture therapy. Vaso-aging degree by SA2000E could be use as a predictor of acupuncture hot flash treatment result.

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A Novel Memory Hierarchy for Flash Memory Based Storage Systems

  • Yim, Keno-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.4
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    • pp.262-269
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    • 2005
  • Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

A Study on the Aesthetic Motive in e-Card Design (e카드 디자인의 미적 동인에 대한 연구)

  • 박성완
    • Archives of design research
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    • v.16 no.3
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    • pp.401-410
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    • 2003
  • With increase of internet users, usage frequency of e-mail card is growing up. In addition to advantage of delivering message in real-time, e-mail card contains words, animation and sound. So users can enjoy it's multiple characters. For these reasons, there is a shift in preference from traditional card to e-mail card especially in young age. In character portal sites sewing users with e-mail card it is regarded as useful media for character promotion. After bizarre rabbit 'Mashimaro' wins a great success as Flash animation, Flash card has been treated as an important media in character business. As the study on the aesthetic motive in Flash card, this thesis analyzes what is the meaning existing in characteristic expression of Flash card and proposes that the meaning is related to tension reduction from the viewpoint of entropy principle. We can summarize that contents of animation are based on striving toward simplicity and expressions of animation are based on catabolism. Both lead to pleasure of tension reduction. We can draw conclusion that pleasure of tension reduction becomes one of major factors of the aesthetic motive felt in Flash card.

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Expandable Flash-Type CMOS Analog-to-Digital Converter for Sensor Signal Processing

  • Oh, Chang-Woo;Choi, Byoung-Soo;Kim, JinTae;Seo, Sang-Ho;Shin, Jang-Kyoo;Choi, Pyung
    • Journal of Sensor Science and Technology
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    • v.26 no.3
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    • pp.155-159
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    • 2017
  • The analog-to-digital converter (ADC) is an important component in various fields of sensor signal processing. This paper presents an expandable flash analog-to-digital converter (E-flash ADC) for sensor signal processing using a comparator, a subtractor, and a multiplexer (MUX). The E-flash ADC was simulated and designed in $0.35-{\mu}m$ standard complementary metal-oxide semiconductor (CMOS) technology. For operating the E-flash ADC, input voltage is supplied to the inputs of the comparator and subtractor. When the input voltage is lower than the reference voltage, it is outputted through the MUX in its original form. When it is higher than the reference voltage, the reference voltage is subtracted from the input value and the resulting voltage is outputted through the MUX. Operation of the MUX is determined by the output of the comparator. Further, the output of the comparator is a digital code. The E-flash ADC can be expanded easily.

A Mapping Table Caching Scheme for NAND Flash-based Mobile Storage Devices (NAND 플래시 기반 모바일 저장장치를 위한 사상 테이블 캐싱 기법)

  • Yang, Soo-Hyeon;Ryu, Yeon-Seung
    • The Journal of Society for e-Business Studies
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    • v.15 no.4
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    • pp.21-31
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    • 2010
  • Recently e-business such as online financial trade and online shopping using mobile computes are widely spread. Most of mobile computers use NAND flash memory-based storage devices for storing data. Flash memory storage devices use a software called flash translation layer to translate logical address from a file system to physical address of flash memory by using mapping tables. The legacy FTLs have a problem that they must maintain very large mapping tables in the RAM. In order to address this issues, in this paper, we proposed a new caching scheme of mapping tables. We showed through the trace-driven simulations that the proposed caching scheme reduces the space overhead dramatically but does not increase the time overhead. In the case of online transaction workload in e-business environment, in particular, the proposed scheme manifests better performance in reducing the space overhead.

Design and Implementation of Flash Translation Layer with O(1) Crash Recovery Time (O(1) 크래시 복구 수행시간을 갖는 FTL의 설계와 구현)

  • Park, Joon Young;Park, Hyunchan;Yoo, Chuck
    • KIISE Transactions on Computing Practices
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    • v.21 no.10
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    • pp.639-644
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    • 2015
  • The capacity of flash-based storage such as Solid State Drive(SSD) and embedded Multi Media Card(eMMC) is ever-increasing because of the needs from the end-users. However, if a flash-based storage crashes, such as during power failure, the flash translation layer(FTL) is responsible for the crash recovery based on the entire flash memory. The recovery time increases as the capacity of the flash-based storages increases. We propose O1FTL with O(1) crash recovery time that is independent of the flash capacity. O1FTL adopts the working area technique suggested for the flash file system and evaluates the design on a real hardware platform. The results show that O1FTL achieves a crash recovery time that is independent of the capacity and the overhead, in terms of I/O performance, and achieves a low P/E cycle.

Measurement and Prediction of the Combustible Properties of n-Butyl methacrylate(n-BMA) (n-Butyl methacrylate(n-BMA)의 연소특성치의 측정 및 예측)

  • Ha, Dong-Myeong
    • Journal of the Korean Society of Safety
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    • v.31 no.4
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    • pp.42-47
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    • 2016
  • The combustible properties(flash point, explosion limit and autoignition temperature) are the important safety items which are considered in the typical MSDS(material safety data sheet). In this study, for the safe handling of n-butyl methacrylate(n-BMA) being used in various ways in the chemical industry, the flash point and the autoignition temperature(AIT) of n-butyl methacrylate was experimented. And, the lower explosion limit of n-butyl methacrylate was calculated by using the lower flash point obtained in the experiment. The flash points of n-butyl methacrylate by using the Setaflash and Pensky-Martens closed-cup testers measured $44^{\circ}C$ and $51^{\circ}C$, respectively. The flash points of n-butyl methacrylate by using the Tag and Cleveland open cup testers are measured $53^{\circ}C$. The AIT of n-butyl methacrylate by ASTM 659E tester was measured as $295^{\circ}C$. The lower explosion limit by the measured flash point $44^{\circ}C$ was calculated as 0.85 vol.%. It was possible to predict lower explosion limit by using the experimental flash point or flash point in the literature.

Effects of Zn-Flash Coating on Hydrogen Evolution, Infusion, and Embrittlement of Advanced-High-Strength Steel During Electro-Galvanizing (Zn-Flash 코팅 처리가 전기아연도금 시 초고강도 강재의 수소 발생, 유입 및 취화 거동에 미치는 영향)

  • Hye Rin Bang;Sang Heon Kim;Sung Jin Kim
    • Corrosion Science and Technology
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    • v.22 no.5
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    • pp.341-350
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    • 2023
  • In the present study, effects of a thin Zn-flash coating on hydrogen evolution, infusion, and embrittlement of advanced high strength steel during electro-galvanizing were examined. The electrochemical permeation technique in conjunction with impedance spectroscopy was employed under applied cathodic polarization. Moreover, a slow-strain rate test was conducted to evaluate loss of elongation (i.e., indicative of hydrogen embrittlement (HE)) and examine fracture surfaces. Results showed that the presence of a thin Zn-flash coating, even when it was not distributed uniformly, reduced hydrogen evolution rate and substantially impeded infusion of hydrogen into the steel substrate. This was primarily due to a hydrogen overvoltage on Zn coating and trapping of hydrogen at the interface of Zn coating/flash coating/steel substrate. Consequently, the sample with flash coating had a smaller HE index than the sample without flash coating. These results suggest that a thin Zn-flash coating could be an effective technical strategy for mitigating HE in advanced high-strength steels.

Nanosecond Laser Flash Photolysis Study of 5-Styryl-1,3-dimethyluracil

  • Shim Sang Chul;Shin Eun Ju;Chae Kyu Ho
    • Bulletin of the Korean Chemical Society
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    • v.6 no.4
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    • pp.234-238
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    • 1985
  • The photoisomerization of 5-styryl-1,3-dimethyluracil is studied with nanosecond laser flash photolysis technique at room temperature. The laser flash photolysis of E-isomer produces the transient absorption spectrum regarded as the triplet-triplet absorption, but the transient absorption of Z-isomer does not show the typical decay curve, probably due to the facile photocyclization reaction during the laser flash photolysis. Using the energy transfer method on nanosecond laser spectroscopy, the energy of the lowest triplet state for E isomer is estimated to lie between 41.8 and 47 kcal/mol. The triplet lifetime for E-isomer obtained from the decay curve of the transient absorption is ca. 93ns. The $S_1 → T_1$ intersystem crossing of E-isomer on direct excitation is relatively inefficient at room temperature supporting the singlet mechanism for direct photoisomerization.