• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• 한국통신학회논문지
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• 제19권8호
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• pp.1446-1452
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• 1994

본 논문은 일반적으로 채택하고 있는 소자(device)의 수명분포인 와이블(Weibull) 분포를 적용하여 소자의 가속(accelerated) 수명 테스트에서 얻은 데이터, 즉 소자의 고정 시간을 이용하여 소자의 수명을 예측(prediction)하는데 필요한 보수(parameter)들을 추정 하는데 베이지안(Bayesian) 추정법을 이용하였다. 베이지안 추정법에서 모수를 추정하기 위해서는 사전정보가 있어야 하는데 본 논문에서는 사전정보 없이 현재의 정보만을 이용하여 모수를 추정하는 방법을 제안하였다. 스트레스가 온도인 경우, Arrhenius 모델을 적용하여 소자의 정상동작 상태에서의 수명을 예측 하는데 선형 추정을 하였다.

• 한국통신학회논문지
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• 제28권8A호
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• pp.650-656
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• 2003

In 1995, a group of representatives from the integrated circuits and computer-aided design industries presented a industry standard bipolar model called the VBIC model. The VBIC model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating which are not available in the conventional SGP model. This paper applies VBIC model for SiGe HBT device and develops an accurate and efficient methodology to extract all the DC and AC parameters of the VBIC model for SiGe HBT device at room temperature. Simulated results by the extracted VBIC model parameter are compared with the measurement data and show very good agreement in both DC and s-parameters prediction.

• 한국산학기술학회논문지
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• 제4권3호
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• pp.177-182
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• 2003

Flash memory는 device 특성상 peripheral circuit을 구성하는 transistor의 종류가 다양하고, 이에 따른 각 transistor의 동작 전압 영역이 넓다. 이에 따라 설계 초기의 전기적 특성 사양 결정을 위해서는, 실리콘상에서 소자의 scale down에 따른 전기적 특성을 선 검증하는 과정이 필수적이었으며, 이로 인해 설계 및 소자 개발의 기간을 단축하기 어려웠다. 본 연구에서는 TCAD tool을 사용하여 실리콘상에서의 제작 공정을 거치지 않고, 효과적으로 model parameter를 생성할 수 있도록 하는 방법을 제안하여 전기적 특성 사양 결정과 설계 단계의 시간 지연을 감소할 수 있도록 한다. 또한 성공적 TCAD tool적용을 위해 필요한 process/device simulator의 calibration methodology와 이를 flash 메모리 소자에 대해 적용 검증한 결과를 분석한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.107-116
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• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.236-239
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• 1995

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• 대한전기학회논문지:전력기술부문A
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• 제53권5호
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• pp.249-256
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• 2004

This paper suggests a novel evaluation scheme of protective effectiveness in distribution systems. The adequacy of every parameter in a protective device is evaluated for the setting or correction rules. Then, the protective effectiveness of a device, device-wise effectiveness, is obtained by the combination of the parametric evaluation results. The coordination-wise effectiveness between devices can be calculated by evaluating the parameters which contribute the performance of coordination. The protective effectiveness of the whole system can be obtained by combining the device-wise and coordination-wise effectiveness values. The rules, in this paper, are categorized into three groups; rules for single parameter, rules for coordination between parameters, and rules for coordination between protective devices to form a hierarchical calculation model. The proposed method is applied to a typical distribution network to show its effectiveness.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.131-135
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• 2021

Numbers of studies related to optimization of design of organic light emitting diodes(OLED) through machine learning are increasing. We propose the generative method of the image to assess the performance of the device combining with machine learning technique. Principle parameter regarding dark spot growth mechanism of the OLED can be the key factor to determine the long-time performance. Captured images from actual device and randomly generated images at specific time and initial pinhole state are fed into the deep neural network system. The simulation reinforced by the machine learning technique can predict the device parameters accurately and faster. Similarly, the inverse design using multiple layer perceptron(MLP) system can infer the initial degradation factors at manufacturing with given device parameter to feedback the design of manufacturing process.

• 로봇학회논문지
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• 제1권2호
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• pp.135-141
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• 2006

This paper presents offline estimation of equivalent physical damping parameter in haptic interaction systems where damping is the most important parameter for stability. Based on the previous energy bounding algorithm, an offline procedure is developed in order to estimate the physical damping parameter of a haptic device by measuring energy flow-in to the haptic device. The proposed method does not use force/torque sensor at the handgrip. Numerical simulation and experiments verified effectiveness of the proposed method.