A Study on Process and Characteristics of nMOSFET by DTC Method

DTC에 의한 MOSFET의 공정 및 소자특성에 관한 연구

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.