Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1995.11a
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- Pages.232-235
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- 1995
A Study on DIBL Characteristics in Deep Sub-Half Micron PMOSFETs
Deep Sub-Half Micron PMOSFETs의 DIBL 특성에 관한 연구
Abstract
To improve the DIBL characteristics of deep sub micron BC PMOSFETs, the methods of DCI(Deep Channel Implantation) and Hale Implantation have been reported. In this study, using the process simulator TSUPREM4, we simulated the 0.25
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