Extraction of the OLED Device Parameter based on Randomly Generated Monte Carlo Simulation with Deep Learning

무작위 생성 심층신경망 기반 유기발광다이오드 흑점 성장가속 전산모사를 통한 소자 변수 추출

  • You, Seung Yeol (School of Electrical Engineering, Korea University) ;
  • Park, Il-Hoo (School of Electrical Engineering, Korea University) ;
  • Kim, Gyu-Tae (School of Electrical Engineering, Korea University)
  • 유승열 (고려대학교 공과대학 전기전자공학과) ;
  • 박일후 (고려대학교 공과대학 전기전자공학과) ;
  • 김규태 (고려대학교 공과대학 전기전자공학과)
  • Received : 2021.09.03
  • Accepted : 2021.09.16
  • Published : 2021.09.30

Abstract

Numbers of studies related to optimization of design of organic light emitting diodes(OLED) through machine learning are increasing. We propose the generative method of the image to assess the performance of the device combining with machine learning technique. Principle parameter regarding dark spot growth mechanism of the OLED can be the key factor to determine the long-time performance. Captured images from actual device and randomly generated images at specific time and initial pinhole state are fed into the deep neural network system. The simulation reinforced by the machine learning technique can predict the device parameters accurately and faster. Similarly, the inverse design using multiple layer perceptron(MLP) system can infer the initial degradation factors at manufacturing with given device parameter to feedback the design of manufacturing process.

Keywords

Acknowledgement

This work was supported by Samsung Display Co. Ltd.

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