• Electrical & Electronic Materials
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• v.9 no.8
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.8
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• pp.1446-1452
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• 1994

In this paper, Weibull distribution is applied to the lifetme distribution of a device. The method of Bayesian estimate used to estimate requiring parameter in order to predict lifetime of device using accelerated lifetime test data, namely failure time of device. The method of Bayesian estimate needs prior information in order to estimate parameter. But this paper proposed the method of parameter estimate without prior information. As stress is temperature, Arrhenius model is applied and the method of linear estimate is applied to predict lifetime of device at the state of normal operation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.8A
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• pp.650-656
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• 2003

In 1995, a group of representatives from the integrated circuits and computer-aided design industries presented a industry standard bipolar model called the VBIC model. The VBIC model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating which are not available in the conventional SGP model. This paper applies VBIC model for SiGe HBT device and develops an accurate and efficient methodology to extract all the DC and AC parameters of the VBIC model for SiGe HBT device at room temperature. Simulated results by the extracted VBIC model parameter are compared with the measurement data and show very good agreement in both DC and s-parameters prediction.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.177-182
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• 2003

In the case of the flash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must be processed. In this study, an efficient design flow is suggested using TCAD tools. The test vehicle is replaced with well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for flash memory device. The calibration errors are less than 5% of a full chip operation, which is accepted by the designers. The results of the calibration were used to predict I-V curves and model parameter of the various transistors for the design of flash device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.107-116
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• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.236-239
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• 1995

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.5
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• pp.249-256
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• 2004

This paper suggests a novel evaluation scheme of protective effectiveness in distribution systems. The adequacy of every parameter in a protective device is evaluated for the setting or correction rules. Then, the protective effectiveness of a device, device-wise effectiveness, is obtained by the combination of the parametric evaluation results. The coordination-wise effectiveness between devices can be calculated by evaluating the parameters which contribute the performance of coordination. The protective effectiveness of the whole system can be obtained by combining the device-wise and coordination-wise effectiveness values. The rules, in this paper, are categorized into three groups; rules for single parameter, rules for coordination between parameters, and rules for coordination between protective devices to form a hierarchical calculation model. The proposed method is applied to a typical distribution network to show its effectiveness.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.131-135
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• 2021

Numbers of studies related to optimization of design of organic light emitting diodes(OLED) through machine learning are increasing. We propose the generative method of the image to assess the performance of the device combining with machine learning technique. Principle parameter regarding dark spot growth mechanism of the OLED can be the key factor to determine the long-time performance. Captured images from actual device and randomly generated images at specific time and initial pinhole state are fed into the deep neural network system. The simulation reinforced by the machine learning technique can predict the device parameters accurately and faster. Similarly, the inverse design using multiple layer perceptron(MLP) system can infer the initial degradation factors at manufacturing with given device parameter to feedback the design of manufacturing process.

• The Journal of Korea Robotics Society
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• v.1 no.2
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• pp.135-141
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• 2006

This paper presents offline estimation of equivalent physical damping parameter in haptic interaction systems where damping is the most important parameter for stability. Based on the previous energy bounding algorithm, an offline procedure is developed in order to estimate the physical damping parameter of a haptic device by measuring energy flow-in to the haptic device. The proposed method does not use force/torque sensor at the handgrip. Numerical simulation and experiments verified effectiveness of the proposed method.