• 제목/요약/키워드: degraded Material

검색결과 368건 처리시간 0.027초

Stochastic Estimation of Acoustic Impedance of Glass-Reinforced Epoxy Coating

  • Kim, Nohyu;Nah, Hwan-Seon
    • 비파괴검사학회지
    • /
    • 제34권2호
    • /
    • pp.119-127
    • /
    • 2014
  • An epoxy coating applied to the concrete surface of a containment building deteriorates in hazardous environments such as those containing radiation, heat, and moisture. Unlike metals, the epoxy coating on a concrete liner absorbs and discharges moisture during the degradations process, so it has a different density and volume during service. In this study, acoustic impedance was adopted for characterizing the degradation of a glass-reinforced epoxy coating using the acoustic reflection coefficient (reflectance) on a rough epoxy coating. For estimating the acoustic reflectance on a wavy epoxy coating surface, a probabilistic model was developed to represent the multiple irregular reflections of the acoustic wave from the wavy surface on the basis of the simulated annealing technique. A number of epoxy-coated concrete specimens were prepared and exposed to accelerated aging conditions to induce an artificial aging degradation in them. The acoustic impedance of the degraded epoxy coating was estimated successfully by minimizing the error between a waveform calculated from the mathematical model and a waveform measured from the surface of the rough coating.

배열회수보일러 복수예열기 부식 파손 분석 (Corrosion Failure Analysis of Condensate Pre-Heater in Heat Recovery Steam Generator)

  • 채호병;김우철;김희산;김정구;김경민;이수열
    • Corrosion Science and Technology
    • /
    • 제20권2호
    • /
    • pp.69-76
    • /
    • 2021
  • In this work, we have performed a corrosion failure analysis of a leaking tube connected to an upper header of a condensate pre-heater in a heat recovery steam generator. It was revealed that the leakage position in the tube was the location where the materials were easily vulnerable due to tensile residual stresses induced by the material manufacturing process and welding process. In addition to an imbalance in the module induced by temperature difference during operation of the pre-heater, the weight of the modules and thermal fatigue provoked a type of stress of tensile-tensile fatigue on the tube. Thus, the leakage position of the pre-heater was exposed to the tensile stress on the inner surface of the tube facing the gas, which rendered the unstable oxide layer susceptible to corrosion and the formation of pits on the water side. The cracks propagated along with the degraded microstructure in a transgranular cracking mode under fatigue loading and finally resulted in water leakage.

Residual bearing capacity of steel-concrete composite beams under fatigue loading

  • Wang, Bing;Liu, Xiaoling;Zhuge, Ping
    • Structural Engineering and Mechanics
    • /
    • 제77권4호
    • /
    • pp.559-569
    • /
    • 2021
  • This study was conducted to investigate the residual bearing capacity of steel-concrete composite beams under high-cycle fatigue loading through experiments and theoretical analysis. Six test beams with stud connectors were designed and fabricated for static, complete fatigue, and partial fatigue tests. The failure modes and the degradation of several mechanical performance indicators of the composite beams under high-cycle fatigue loading were analyzed. A calculation method for the residual bearing capacity of the composite beams after certain quantities of cyclic loading cycles was established by introducing nonlinear fatigue damage models for concrete, steel beam, and shear connectors beginning with the material residual strength attenuation process. The results show that the failure mode of the composite beams under the given fatigue load appears to be primarily affected by the number of cycles. As the number of fatigue loadings increases, the failure mode transforms from mid-span concrete crushing to stud cutting. The bearing capacity of a 3.0-m span composite beam after two million fatigue cycles is degraded by 30.7% due to premature failure of the stud. The calculated values of the residual bearing capacity method of the composite beam established in this paper agree well with the test values, which indicates that the model is feasibly applicable.

SiPM PET/CT에서 3D 프린팅 기반 자체제작한 팬텀을 이용한 iMAR 알고리즘 유용성 평가에 관한 연구 (The feasibility of algorithm for iterative metal artifact reduction (iMAR) using customized 3D printing phantom based on the SiPM PET/CT scanner)

  • 이민규;박찬록
    • 핵의학기술
    • /
    • 제28권1호
    • /
    • pp.35-40
    • /
    • 2024
  • Purpose: To improve the image quality in positron emission tomography (PET), the attenuation correction technique based on the computed tomography (CT) data is important process. However, the artifact is caused by metal material during PET/CT scan, and the image quality is degraded. Therefore, the purpose of this study was to evaluate image quality according to with and without iterative metal artifact reduction (iMAR) algorithm using customized 3D printing phantom. Materials and Methods: The Hoffman and Derenzo phantoms were designed. To protect the gamma ray transmission and express the metal portion, lead substance was located to the surface. The SiPM based PET/CT was used for acquisition of PET images according to application with and without iMAR algorithm. The quantitative methods were used by signal to noise ratio (SNR), coefficient of variation (COV), and contrast to noise ratio (CNR). Results and Discussion: The results shows that the image quality applying iMAR algorithm was higher 1.15, 1.19, and 1.11 times than image quality without iMAR algorithm for SNR, COV, and CNR. Conclusion: In conclusion, the iMAR algorithm was useful for improvement of image quality by reducing the metal artifact lesion.

QD-LED용 무기계 홀전도층 NiO 박막 증착 연구 (Depositon of NiO films for Inorganic Hole-transporting Layer in QD-LED)

  • 정국채;오승균;김영국;최철진
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
    • /
    • pp.330-330
    • /
    • 2009
  • For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

  • PDF

MBE로 성장된 Al0.25Ga0.75As/In0.2Ga0.8As pHEMT 에피구조의 RTA에 따른 전도 특성 (RTA Effect on Transport Characteristics in Al0.25Ga0.75As/In0.2Ga0.8As pHEMT Epitaxial Structures Grown by Molecular Beam Epitaxy)

  • 김경현;홍성의;백문철;조경익;최상식;양전욱;심규환
    • 한국전기전자재료학회논문지
    • /
    • 제19권7호
    • /
    • pp.605-610
    • /
    • 2006
  • We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

TiO2/ZnS/Ag/ZnS/TiO2 다층막의 PDP 필터용 전극 특성 (Transparent Electrode Performance of TiO2/ZnS/Ag/ZnS/TiO2 Multi-Layer for PDP Filter)

  • 오원석;이서희;장건익;박성완
    • 한국전기전자재료학회논문지
    • /
    • 제23권9호
    • /
    • pp.681-684
    • /
    • 2010
  • The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

Hafnium Oxide를 Trapping Layer로 적용한 Fin-Type SOHOS 플래시 메모리 특성연구 (Analysis of Fin-Type SOHOS Flash Memory using Hafnium Oxide as Trapping Layer)

  • 박정규;오재섭;양승동;정광석;김유미;윤호진;한인식;이희덕;이가원
    • 한국전기전자재료학회논문지
    • /
    • 제23권6호
    • /
    • pp.449-453
    • /
    • 2010
  • In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

투명 전도막 개선을 통한 Cu(Inx,Ga1-x)Se2 박막태양전지 효율 향상에 관한 연구 (Improvement of Efficiency of Cu(Inx,Ga1-x)Se2 Thin Film Solar Cell by Enhanced Transparent Conductive Oxide Films)

  • 김기림;손경태;김민영;조성희;신준철;임동건
    • 한국전기전자재료학회논문지
    • /
    • 제27권4호
    • /
    • pp.203-208
    • /
    • 2014
  • In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

테프론의 가열에 의한 C-V 열화 특성에 관한 연구 (A Study on Properties of C-V Degradation due to Heating in Teflon)

  • 이성일
    • 한국전기전자재료학회논문지
    • /
    • 제27권11호
    • /
    • pp.730-735
    • /
    • 2014
  • In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.