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Improvement of Efficiency of Cu(Inx,Ga1-x)Se2 Thin Film Solar Cell by Enhanced Transparent Conductive Oxide Films

투명 전도막 개선을 통한 Cu(Inx,Ga1-x)Se2 박막태양전지 효율 향상에 관한 연구

  • Kim, Kilim (Korea Institute of Industrial Technology) ;
  • Son, Kyeongtae (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Kim, Minyoung (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Shin, Junchul (Department of IT Convergence, Korea National University of Transportation) ;
  • Jo, Sunghee (Department of IT Convergence, Korea National University of Transportation) ;
  • Lim, Donggun (Department of Electronic Engineering, Korea National University of Transportation)
  • 김기림 (한국생산기술연구원) ;
  • 손경태 (한국교통대학교 전자공학과) ;
  • 김민영 (한국교통대학교 전자공학과) ;
  • 조성희 (한국교통대학교 정보기술융합학과) ;
  • 신준철 (한국교통대학교 정보기술융합학과) ;
  • 임동건 (한국교통대학교 전자공학과)
  • Received : 2014.02.12
  • Accepted : 2014.03.19
  • Published : 2014.04.01

Abstract

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

Keywords

References

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