• Title/Summary/Keyword: defect engineering

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Anomalous Subthreshold Characteristics of Shallow Trench-Isolated Submicron NMOSFET with Capped p-TEOS/SiN

  • Lee, Hyung J.
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.3
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    • pp.18-20
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    • 2002
  • In sub-l/4 ${\mu}{\textrm}{m}$ NMOSFET with STI (Shallow Trench Isolation), the anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel boron dopant redistribution due to the defect should be considered to improve hump characteristics besides considerations of STI comer and recess. 130

A Study of Micro-defect on chemical Mechanical Polishing(CMP) Process in VLST Circuit (고집적화 반도체 소자의 CMP 공정에서 Micro-Defect 관한 연굴)

  • Kim, Sang-Yong;Lee, Kyeng-Tae;Seo, Yong-Jin;Lee, Woo-Sun;Chung, Hun-Sang;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1891-1894
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    • 1999
  • We can classify the scratches after CMP process into micro-scratch and macro-scratches according to the scratch size, scratch intensity and defect map, etc. The micro-scratches on wafer after CMP process are discussed in this paper. From many causes, major factor that influences the formation of micro-scratch is known as particle size distribution of slurry.(1) It is indefinite what size or type of particle can cause micro-scratch on wafer surface, but there is possibility caused by large particle over 1um. The best way for controlling these large particle to inflow is to use the slurry filter on POU(Point of user). But the slurry filter(especially, depth-type filter) has sometimes the problem which makes more sever micro-scratches on wafer surface after CMP. We studied that depth-type slurry filter has what kind of week-points and the number of scratch could be reduced by lowering slurry flow rate and by using high spray bar which sprays DIW on polishing pad with high pressure.

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The Influence of Software Engineering Levels on Defect Removal Efficiency (소프트웨어공학수준이 결함제거효율성에 미치는 영향)

  • Lee, Jong Moo;Kim, Seung Kwon;Park, Ho In
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.9 no.4
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    • pp.239-249
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    • 2013
  • The role of software process is getting more important to make good quality softwares. One of the measures to improve the software process is Defect Removal Efficiency(DRE). DRE gives a measure of the development team ability to remove defects prior to release. It is calculated as a ratio of defects resolved to total number of defects found. Software Engineering Levels are usually decided by CMMI Model. The model is designed to help organizations improve their software product and service development, acquisition, and maintenance processes. The score of software engineering levels can be calculated by CMMI model. The levels are composed of the three groups(absent, average, and advanced). This study is to find if there is any difference among the three categories in term of the result of software engineering levels on DRE. We propose One way ANOVA to analyze influence of software engineering levels on DRE. Bootstrap method is also used to estimate the sampling distribution of the original sample because the data are not sampled randomly. The method is a statistical method for estimating the sampling distribution of an estimator by sampling with replacement from the original sample. The data were collected in 106 software development projects by the survey. The result of this study tells that there is some difference of DRE among the groups. The higher the software engineering level of a specific company becomes, the better its DRE gets, which means that the companies trying to improve software process can increase their good management performance.

Single-Domain-Like Graphene with ZnO-Stitching by Defect-Selective Atomic Layer Deposition

  • Kim, Hong-Beom;Park, Gyeong-Seon;Nguyen, Van Long;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.329-329
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    • 2016
  • Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

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Interplay between Defect Propagation and Surface Hydrogen in Silicon Nanowire Kinking Superstructures

  • Sin, Nae-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.221.1-221.1
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    • 2015
  • The vapor-liquid-solid (VLS) method, where the "liquid" catalytic droplets collecting atoms from vapor precursors build the solid crystal layers via supersaturation, is a ubiquitous technique to synthesize 1-dimensional nanoscale materials. However, the lack of fundamental understanding of chemical information governing the process inhibits the rational route to the structural programming. By combining the in situ or operando IR spectroscopy with post-growth high resolution electron microscopy, we show the strong correlation between the surface chemical species concentration and nanowire structures. More specifically, the critical role of surface adsorbed hydrogen, generated from the decomposition of Si2H6 precursor on the interplay between nanowire / kinking and the defect propagation is demonstrated. Our results show that adsorbed hydrogen atoms are responsible for selecting -oriented growth and indicate that a twin boundary imparts structural coherence. The twin boundary, only continuous at / kinks, reduces the symmetry of the trijunction and limits the number of degenerate directions available to the nanowire. These findings constitute a general approach for rationally engineering kinking superstructures and also provide important insight into the role of surface chemical bonding during VLS synthesis.

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Optimum Design of a Non-Destructive Testing System to Maximize Magnetic Flux Leakage

  • Park, G.S;Jang, P.W;Rho, Y.W
    • Journal of Magnetics
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    • v.6 no.1
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    • pp.31-35
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    • 2001
  • This paper describes the design method of a magnetic system to maximize the magnetic flux leakage (MFL) in a non-destructive testing (NDT) system. The defect signals in a MFL type NDT system mainly depend on the change of the magnetic leakage flux in the region of a defect. The characteristics of the B-H curves are analysed and a design method to define the operating point on B-H curves for maximum leakage is performed. The computed MFL signal by a nonlinear finite element method is verified by measurement using Hall sensors mounted on the 6 legs PIG, the traveling detector unit in gas pipe, in an 8 inch test tube with defects. The rhombic defects could be successfully identified from the defect signals.

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Defect Model for the Oxygen Potential of Urania doped wit Gadolinia (가돌리니아 첨가 이산화우라늄의 점결함 모델에 의한 산소포텐샬 연구)

  • Park, Kwang-Heon;Kim, Jang-Wook
    • Nuclear Engineering and Technology
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    • v.23 no.3
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    • pp.321-327
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    • 1991
  • A defect model e)[plaining the oxygen potential of Gadolinia doped urania based on the defect structure of pure urania has been developed. Gd-dopants are assumed to stay in the cation sites pushing away nearby oxygen interstitials reducing the number of interstitial sites. Gd-dopants also form dopant-vacancy clusters in the abundance of oxygen vacancies. This model explains the discontinuous change of the oxygen potential at O/M= as well as the increase of the potential with the dopant concentration.

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Detection of Apple Defects Using Machine Vision (컴퓨터 시각에 의한 사과 결점 검출)

  • 서상룡;성제훈
    • Journal of Biosystems Engineering
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    • v.22 no.2
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    • pp.217-226
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    • 1997
  • This study was to develop a machine vision system to detect and to discriminate 5 kinds of apple surface defectbruise, decay. fleck, worm hole and scar. To detect the defects from an image of apple, thresholding technique was applied to images on various frames (R, G, B, H, S and I) of the color machine vision and an image of near infrared (NIR). To discriminate the detected region of defect, various features of the 5 kind defect regions were extracted from the 4 kinds of images selected above. The features were size of area, roundness, axes length ratio, mean and valiance of pixel values, standard deviation of real part of amplitude spectrum in frequency domain obtained by Fourier transform of pixel data and mean and standard deviation of power spectrum obtained by the same transform of pixel data. Routines to discriminate the defects from the features of image were developed and tested to prove their validity. The test resulted that I-frame and NIR images were the most desirable. Accuracies of the two images to discriminate the defects were noted as 76% and 77%, respectively.

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A Study on Extraction of Additional Information Methodology for Defect Management in the Design Stage (설계단계의 결함관리를 위한 추가정보 추출에 관한 연구)

  • Lee, Eun-Ser
    • KIPS Transactions on Software and Data Engineering
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    • v.9 no.10
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    • pp.297-302
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    • 2020
  • Software design are an important phase in the software developments. In order to manage software design, we propose additional information. Additional information suggests a standard and quantitative methods. In this study, we propose additional information at the design stage for defect management.

Surface Defect Inspection System for Hot Slabs (열간 슬라브 표면결함 탐상 시스템)

  • Yun, Jong Pil;Jung, Daewoong;Park, Changhyun
    • Journal of Institute of Control, Robotics and Systems
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    • v.22 no.8
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    • pp.627-632
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    • 2016
  • In this paper, we propose a new vision-based defect inspection system for the surface of hot slabs. To minimize the influence of self-emission from slab surfaces with high temperature, an optic method based on blue LED light and a blue pass filter is proposed. Because the slab surface is partially covered with scales, which are unavoidable oxidized substances caused during manufacturing, it is difficult to distinguish between vertical cracks and scale. In order to resolve this problem and to improve the detection performance, the use of a Gabor filter and dynamic programming are proposed. Finally, the effectiveness of the proposed method is shown by means of experiments conducted on images of hot slabs that were obtained from an actual slab production line.