• Current Optics and Photonics
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• v.6 no.1
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• pp.32-38
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• 2022

Erbium-doped fiber amplifiers (EDFAs) have saturated the technological market but are still widely used in high-speed and long-distance communication systems. To overcome EDFA saturation and limitations, its erbium-doped fiber is co-doped with other materials such as zirconia and bismuth. This article demonstrates and compares the performance using three different fibers as the gain medium for zirconia-erbium-doped fibers (Zr-EDF), bismuth-erbium-doped fibers (Bi-EDF), and commercial silica-erbium-doped fibers (Si- EDF). The optical amplifier was configured with a double-pass amplification system, with a broadband mirror at the end of its configuration to allow double-pass operation in the system. The important parameters in amplifiers such as optical properties, optical amplification and noise values were also examined and discussed. All three fibers were 0.5 m long and entered with different input signals: 30 dBm for low input and 10 dBm for high input. Zr-EDF turned out to be the most relevant optical amplifier as it had the highest optical gain, longest transmission distance, highest average flatness gain with minimal jitter, and relevant noise figures suitable for the latest communication technology.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11A
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• pp.902-911
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• 2003

Using InGaP/GaAs HBT power cells with a 2.0${\times}$20$\mu\textrm{m}$$^2$ emitter area of a unit HBT, a two stage MMIC power amplifier has been developed for IMT-2000 handsets. An active-bias circuit has been used for temperature compensation and reduction in the idling current. Fitting on measured S-parameters of the HBT cells, circuit elements of HBT's nonlinear equivalent model have been extracted. The matching circuits have been designed basically with the extracted model. A two stage HBT MMIC power amplifier fabricated using ETRI's HBT process. The power amplifier produces an 1-㏈ compressed output power(P$\_$l-㏈/) of 28.4 ㏈m with 31% power added efficiency(PAE) and 23-㏈ power gain at 1.95 GHz in on-wafer measurement. Also, the power amplifier produces a 26 ㏈m output power, 28% PAE and a 22.3-㏈ power gain with a -40 ㏈c ACPR at a 3.84 ㎒ off-center frequency in COB measurement.quency in COB measurement.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.39-46
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• 2012

The newly designed sense amplifier in this paper has rail-to-rail input range achieving low power consumption. Reducing static power consumption generated due to DC path to ground is key element for low power consumption in this paper. The proposed sense amplifier performs power-saving operation using negative feedback circuit that controls the current flow with the newly added PMOS input terminal. As a simulation result, the proposed sense amplifier consumed about over 50 % efficiency of the average power consumed by the typical Rail-to-Rail sense amplifier.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.41-46
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• 2008

We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.109-116
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• 2014

This paper presents a high-efficiency digital class-D audio amplifier using a composite interpolation filter for portable audio devices. The proposed audio amplifier is composed of an interpolation filter, a delta-sigma modulator, and a class-D output stage. To reduce power consumption, the designed interpolation filter has an optimized composite structure that uses a direct-form symmetric and Lagrange FIR filters. Compared to the filters with homogeneous structures, the hardware cost and complexity are reduced by about half by the optimization. The coefficients of the digital delta-sigma modulator are also optimized for low power consumption. The class-D output stage has gate driver circuits to reduce shoot-through current. The implemented class-D audio amplifier exhibited a high efficiency of 87.8 % with an output power of 57 mW at a load impedance of $16{\Omega}$ and a power supply voltage of 1.8 V. An outstanding signal-to-noise ratio of 90 dB and a total harmonic distortion plus noise of 0.03 % are achieved for a single-tone input signal with a frequency of 1 kHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.380-388
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• 2011

In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.307-310
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• 1999

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated. The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence. The results of the characteristics investigation are summarized as follows: (1) When the frequency of an excitation voltage was increased, both the brightness response and the brightness saturation of the Se/ZnS thin film light amplifier began to start at a higher light input. (2) The gain of the Se/ZnS thin film light amplifier was dependent upon the amplitude and the frequency of the excitation voltage as well as an external light input. (3) When the Se/ZnS thin film light amplifier was excited by a direct current of a constant voltage, the frequency of the output brightness was\\`equal to the frequency of the input light applied. When the light amplifier was excited by a sinusoidal voltage of 60 Hz, the frequency of the output brightness was 120 Hz.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.403-411
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• 2020

Since the analog circuit of the beta ray sensor circuit for the true random number generator and the power and ground line used in the comparator circuit are shared with each other, the power generated by the digital switching of the comparator circuit and the voltage drop at the ground line was the cause of the decreasein the output signal voltage drop at the analog circuit including CSA (Charge Sensitive Amplifier). Therefore, in this paper, the output signal voltage of the analog circuit including the CSAcircuit is reduced by separating the power and ground line used in the comparator circuit, which is the source of digital switching noise, from the power and ground line of the analog circuit. In addition, in the voltage-to-voltage converter circuit that converts VREF (=1.195V) voltage to VREF_VCOM and VREF_VTHR voltage, there was a problem that the VREF_VCOM and VREF_VTHR voltages decrease because the driving current flowing through each current mirror varies due to channel length modulation effect at a high voltage VDD of 5.5V when the drain voltage of the PMOS current mirror is different when driving the IREF through the PMOS current mirror. Therefore, in this paper, since the PMOS diode is added to the PMOS current mirror of the voltage-to-voltage converter circuit, the voltages of VREF_VCOM and VREF_VTHR do not go down at a high voltage of 5.5V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.900-905
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• 2009

A common drain feedback CMOS wideband LNA with current bleeding and input inductive series-peaking techniques is presented in this paper. DC coupling is adopted between cascode and feedback amplifiers, so that the gain and NF of the LNA can be dynamically controlled by adjusting the bleeding current. The fabricated LNA shows the bandwidth of 2.5 GHz. The high gain mode shows 17.5 dB gain with $1.7{\sim}2.8\;dB$ NF and consumes 27 mW power and the low gain mode has 14 dB gain with $2.7{\sim}4.0\;dB$ NF and dissipates 1.8 mW from 1.8 V supply.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.6
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• pp.251-257
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• 2014

An actuator system is a type of motor designed to control a mechanism operated by a source of energy, in the form of an electric current by converting energy into some kind of motion. As audio actuators, transforming electric voltage signal into audio signal, speakers and amplifiers are commonly used. In applications of industry, high output power systems are required. For these systems to generate high-quality output, it is essential to control output impedance of audio systems. We have developed an adaptable power supply for driving active amplifier systems with variable loads. Depending on the changing values of resistance of the speaker which produces audible sound by transforming electric voltage signal, the power supply source of the active amplifier can generate the maximum power delivered to the speaker by an adaptable change of loads. The amplifier is well protected from the abrupt increment of peak current and an excess of current flow.