Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Development of a Two-Stage High Gain D-Band MMIC Drive Amplifier Using $0.1{\mu}m$ Metamorphic HEMT Technology

$0.1{\mu}m$ Metamorphic HEMT를 이용한 고이득 D-Band MMIC 2단 구동증폭기 개발

  • 이복형 (삼성탈레스(주) H/W팀 H/W1 그룹) ;
  • 이진구 (동국대학교 전자공학과)
  • Published : 2008.12.25
Download PDF
⟨ Previous Next ⟩

Abstract

We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

본 논문에서는 $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT기술을 기반으로 하여 D-Band(110 - 140 GHz) 대역에서 동작하는 MMIC 2단 구동 증폭기를 제작하였다. 제작된 구동 증폭기는 밀리미터파 대역인 110 GHz에서 10 dB 이상의 우수한 $S_{21}$ 이득 특성을 보였으며, 이때 반사 특성 또한 $S_{11}$ -3.5 dB와 $S_{22}$ -6.5 dB로 양호한 특성을 얻었다. 이러한 높은 성능의 MMIC 구동증폭기의 특성은 주로 MHEMT 성능에 기인한다. 본 논문에서 적용한 $0.1{\mu}m$ MHEMT는 760 mS/mm의 전달컨덕턴스 특성과 195 GHz의 차단주파수 391 GHz의 최대공진 주파수 특성을 갖는다.

Keywords

References

  1. B.H. Lee, D. A, M.K. Lee, B.O. Lim, J.H. Oh, S.D. Kim, J.K. Rhee, J. D. Park, and S.Y. Yi, "Low Conversion Loss and High LO-RF Isolation 94-GHz Active Converter" IEEE Trans. Microwave Theory Tech., Vol. 54, No. 6, pp. 2422-2430, June 2006 https://doi.org/10.1109/TMTT.2006.875299
  2. J.D. Park and W.J. Kim "An Efficient Method of Eliminating the Range Ambiguity for a Low-Cost FMCW Radar Using VCO Tuning Characteristics" IEEE Trans. Microwave Theory Tech., Vol. 54, No. 10, pp. 3623-3629, Oct. 2006 https://doi.org/10.1109/TMTT.2006.882869
  3. B.H. Lee, D. An, M-K. Lee, B-O. Lim, S-D. Kim, and J-K. Rhee, "Two-Stage Broadband High-Gain W-band Amplifier Using 0.1-µm Metamorphic HEMT Technology," IEEE Elec. Device Letters, vol. 25, no. 12, pp. 766-768, Dec. 2004 https://doi.org/10.1109/LED.2004.838506
  4. C. S. Whelan, W. E. Hoke, R. A. McTaggart, S. M. Lardizabal, P. S. Lyman, P. F. Marsh, T. E. Kazior, "Low Noise $In_{0.32}(AlGa)_{0.68}As/In_{0.43}Ga_{0.57}As$ Metamorphic HEMT on GaAs substrate with 850 mW/mm output power density," IEEE Elec. Device Lett., vol. 21, no. 1, pp. 5-8, Jan. 2000 https://doi.org/10.1109/55.817435
  5. Bok-Hyung Lee, Dong-Hoon Shin, Sam-Dang Kim, and Jin-Koo Rhee, "High Maximum Frquency of Oscillation of 0.1${\mu}m$ Off-set Γ-ShapedGate InGaAs/InAlAs/GaAs Metamorphic HEMTs," J. Korean Phys. Soc., vol. 43, no. 6, pp. 427-430, Sep. 2003
  6. S. C. Kim, B. O. Lim, H. S. Lee, T. J. Baek, D.H. Shin, and J. K. Rhee, "50 nm InGaAs/InAlAs- H. Shin, and J. K. Rhee, "50 nm InGaAs/InAlAs Transistors Using Double Exposure at 50 kV Electron-beam Lithography Without Dielectric Support," J. Vad. Sci. Technol. B, vol. 22, no. 4, pp. 1807-1810, Jul/Aug 2004 https://doi.org/10.1116/1.1763892
  7. B. H. Lee, S. D. Kim, and J. K. Rhee, "Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-${\mu}m$ Off-Set$\Gamma$-Shaped Gate InGaAs/InAlAs/GaAs metamorphic High Electron Mobility Transistors" Jpn. J. Appl. Phys., Vol. 43, PP.1914-1918, 2004 https://doi.org/10.1143/JJAP.43.1914
  8. W. R. Curtice, and R. L. Camisa, "Self-consistent GaAs FET Models for Amplifier Design and Device Diagnostics," IEEE Trans. Micro. Theory & Tech., vol. 32, pp. 1573-1578, Dec. 1984 https://doi.org/10.1109/TMTT.1984.1132896
  9. Dan An, Bok Hyung Lee, Yeon Sik Chae, Hyun Chang Park, Hyung Moo Park and Jin Koo Rhee, "Low LO Power V-band CPW Down-Converter Using a GaAs PHEMT," J. Korean Phys. Soc., vol. 41, no. 6, pp. 1013-1016, Dec. 2002
  10. Won-Young Uhm, Woo-Suk Sul, Han-Shin Lee, Sam-Dong Kim, Hyung-Moo Park, and Jin-Koo Rhee, "High-Performance V-band Monolithic Quadruple Subharmonic Mixer With Anti-Parallel Diode Pair," Micro. and Optical Tech. Lett., vol. 40, no. 5, pp. 349-352, March 2004 https://doi.org/10.1002/mop.11378
  11. Tae-Sin Kang, Seong-Dae Lee, Bok-Hyoung Lee, Sam-Dong Kim, Hyun-Chang Park, Hyung-Moo Park, and Jin-Koo Rhee, "Design and Fabrication of a Low-Noise Amplifier for the V-band" J. Korean Phys. Soc., vol. 41, no. 4, pp. 533-538, Oct. 2002
  12. J. W. Shin, Y. S. Yoon, S. D. Lee, H. C. Park and J. K. Rhee, "Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN films," 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), pp. 121-124, 2000
  13. Il-Hyeong Lee, Seong-Dae Lee, and Jin-Koo Rhee, "Studies on Air-Bridge Processes for mm-wave MMIC's Applications," J. Korean Phys. Soc., vol. 35, no. 12, pp. S1043-S1046, 1999