• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1465-1469
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• 2012

For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2675-2678
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• 2012

Studies on niobium anodization in the mixture of 1 M $H_3PO_4$ and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 $mAcm^{-2}$, whereas simple porous type oxide was formed at a current density of lower than 0.3 $mAcm^{-2}$. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M $H_3PO_4$ or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.58-58
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• 2006

• Bulletin of the Korean Chemical Society
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• v.29 no.7
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• pp.1369-1373
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• 2008

A stable twist boat conformation of thiane S-oxide 1a in solid state and in solution was unambiguously determined by single crystal X-ray crystallography and solution NMR analyses. On the contrary, the thiane Sdioxide 2 which was obtained from the oxidation of corresponding thiane S-oxide 1a was confirmed to adopt a regular chair conformation.

• Bulletin of the Korean Chemical Society
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• v.20 no.9
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• pp.1031-1034
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• 1999

Tin oxide films have been grown employing the chemical vapor deposition technique under reduced pressure conditions using tetramethyltin as the precursor and oxygen as the oxidant. An activation energy derived for the deposition reaction under representative deposition conditions has a value of 89±3 kJ mol-1, suggesting a typical kinetic control. Deposition rates of tin oxide films exhibit a near first order dependence on tetramethyltin partial pressure and a zeroth order dependence on oxygen partial pressure. This study provides the first quantitative information about the growth kinetics of tin oxide films from tetramethyltin by the cold-wall low-pressure chemical vapor deposition.

• Journal of Electrochemical Science and Technology
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• v.8 no.2
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• pp.146-154
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• 2017

In this study, copper (II) oxide was prepared for use in a copper electroplating solution. Copper chloride powder and copper (II) oxide are widely used as raw materials for electroplating. Copper (II) oxide was synthesized in this study using a two-step chemical reaction. Herein, we developed a method for the preparation of copper (II) oxide without the use of sintering. In the first step, copper carbonate was prepared without sintering, and then copper (II) oxide was synthesized without sintering using sodium hydroxide. The optimum amount of sodium hydroxide used for this process was 120 g and the optimum reaction temperature was $120^{\circ}C$ regardless of the starting material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.174-179
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• 2012

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

• Carbon letters
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• v.16 no.1
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• pp.41-44
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• 2015

We report the preparation of sulfonated reduced graphene oxide (SRGO) by the sulfonation of graphene oxide followed by radiation-induced chemical reduction. Graphene oxide prepared by the well-known modified Hummer's method was sulfonated with the aryl diazonium salt of sulfanilic acid. Sulfonated graphene oxide (SGO) dispersed in ethanol was subsequently reduced by ${\gamma}$-ray irradiation at various absorbed doses to produce SRGO. The results of optical, chemical, and thermal analyses revealed that SRGO was successfully prepared by ${\gamma}$-ray irradiation-induced chemical reduction of the SGO suspension. Moreover, the electrical conductivity of SRGO was increased up to 2.94 S/cm with an increase of the absorbed dose.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.363-363
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• 2010

After oxide wet etch with BOE(Buffered Oxide Etchant), triangle type defect maps were inspected and SEM image showed them unetch of oxide layer. As decreasing design rule, oxide unetch has become a crucial issue and has affected the yield and quality.