Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Chemical State in the ONO Superthin Film by Second Derivative Auger Spectra

2차 미분 Auger 스펙트럼을 이용한 ONO 초박막의 결합상태에 관한 연구

  • 이상은 (광운대학교 공대 전자재료공학과) ;
  • 윤성필 (광운대학교 공대 전자재료공학과) ;
  • 김선주 (광운대학교 공대 전자재료공학과) ;
  • 서광열 (광운대학교 공대 전자재료공학과)
  • Published : 1998.10.01
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Abstract

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

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