• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
• /
• pp.91-96
• /
• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• 대한전자공학회논문지SD
• /
• 제44권12호
• /
• pp.1-6
• /
• 2007

본 논문에서 기존에 사용하고 있는 metamorphic high electron transistor (MHEMT)의 채널에 InP를 추가하여 제작 하였다. InP는 In0.53Ga0.47As와 비교하여 낮은 충돌 이온화 계수를 가지고 있다. 그런 특성을 MHEMT의 문제점 중의 하나인 낮은 항복전압의 개선에 이용하였다. 우리는 기존의 MHEMT와 InP 합성 채널 MHEMT의 항복 특성과 주파수 특성을 비교 하였다. 본 논문에서 InP 합성 채널 MHEMT의 on-state와 off-state 항복전압이 각각 2.4와 5.7 V가 측정 되었고 또한 cut-off 주파수와 maximum oscillation 주파수는 각각 160 GHz와 230 GHz가 측정 되었다. 위의 결과는 InP 합성 채널 MHEMT가 밀리미터파 대역의 전력용 소자에 이용되는데 큰 장점을 갖는 소자임을 알 수 있다.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권8호
• /
• pp.799-805
• /
• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제14권8호
• /
• pp.3350-3365
• /
• 2020

A considerable literature has recently grown up on the theme of ship wireless communications. However, much of the research up to now has been descriptive in the offshore area. There has been little quantitative analysis of wireless communication in inland waterways, which has received considerable attention lately. Until now, only the effects on inland river environment are examined. What is less clear is the nature of channel change caused by the antenna movement. Here we explore the moving ship-to-fixed-ship fading characteristics at 5.9 GHz for an inland waterway in the city center of China. The ship motion trajectory is designed in order to determine the effect of changes in the antenna position. We evaluate the channel fading characteristics of inland waterway, which are highly correlated with the distance between transmitter and receiver. We demonstrate that the line-of-sight component, as well as the components from multipath with obstruction reflections, contributes largely to the mean power gap. Our findings reveal critical ship-to-ship characteristics in inland waterway, which definitely contribute to the field of ship wireless communications.

• 전자공학회논문지A
• /
• 제29A권8호
• /
• pp.78-88
• /
• 1992

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.907-910
• /
• 2008

The effect of channel length reduction on the electrical characteristics of self-aligned polysilicon TFTs has been investigated by combining experimental characteristics and 2-D numerical simulations. The role of drain induced barrier lowering and floating body effects has been carefully analized using numerical simulations.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 C
• /
• pp.1469-1471
• /
• 2001

A Dual Channel Trench IGBT (Insulated Gate Bipolar Transistor) is proposed to improve the latch-up characteristics. Simulation results by MEDICI have shown that the latching current density of proposed device was found to be 2850 A/$cm^2$ while that of conventional device was 1610 A/$cm^2$. The latching current desity of the proposed strucutre was 77.02% higher than that of conventional structre.

• 한국경영과학회지
• /
• 제19권1호
• /
• pp.169-187
• /
• 1994

The efficiency of marketing channel of distribution between a sholesaler and a retailer with uncertain characteristics can be improved by influencing the retailer's ordering pattern. The wholesaler with large unit invetory holding cost can offer a large quantity discount tanks to the great benefit which comes from the transfer of part of his inventory to retailer. The retailer's increasing average inventory holding cost can be offset by the quantity discount and by savings of the ordering cost. Conditions under which marketing channel improvement can be possible are derived.

• Journal of information and communication convergence engineering
• /
• 제9권6호
• /
• pp.733-737
• /
• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.

• Steel and Composite Structures
• /
• 제3권4호
• /
• pp.243-260
• /
• 2003

This paper reports on the development of a new composite slab system that uses a large- lipped steel channel and reinforced concrete. The advantages of this new system are that it serves as both a structural unit and an unsupported form and it has a secondary structural barrier function. A concrete pouring test was carried out for the large-lipped steel channel. Full-scale tests were carried out to assess the flexural strength-deformation characteristics and structural mechanics of the composite slab. The barrier mechanics of the steel channel concrete element (referred to as the SC subunit) of the composite slab are examined. The test results indicate that the new composite slab has excellent strength, ductility characteristics, and a structural barrier function in its SC subunit that is highly effective against severe loading.